Multifunctional memory cells

1. A memory cell, comprising:

a gate element;

a charge transport element;

a first charge storage element configured to store a first charge transported from the gate element and through the charge transport element, wherein the first charge storage element includes a nitride material; and

a second charge storage element configured to store a second charge transported from the gate element and through the charge transport element, wherein the second charge storage element includes a gallium nitride material.

2. The memory cell of claim 1 , wherein:

the first charge storage element is a volatile charge storage element; and

the second charge storage element is a non-volatile charge storage element.

3. The memory cell of claim 1 , wherein:

the first charge storage element is a first non-volatile charge storage element; and

the second charge storage element is a second non-volatile charge storage element.

4. The memory cell of claim 1 , wherein the charge transport element includes a silicon-rich nitride material.

5. The memory cell of claim 1 , wherein the charge transport element includes a hafnium oxynitride material.

6. The memory cell of claim 1 , wherein the gate element includes a tantalum nitride material.

7. The memory cell of claim 1 , wherein the second charge storage element includes a silicon-rich nitride material.

8. A method of operating a memory cell, comprising:

transporting a charge from a gate element of the memory cell through a charge transport element of the memory cell to:

a first charge storage element of the memory cell having a nitride material; or

a second charge storage element of the memory cell having a gallium nitride material; and

storing, by the charge storage element to which the charge is transported, the charge.

9. The method of claim 8 , wherein the method includes, subsequent to storing the charge:

transporting the charge from the charge storage element in which the charge is stored through the charge transport element to the gate element.

10. The method of claim 8 , wherein transporting the charge through the charge transport element includes tunneling an electron through the charge transport element.

11. The method of claim 8 , wherein the method includes transporting the charge from the gate element through the charge transport element during a program operation performed on the memory cell.

12. The method of claim 8 , wherein transporting the charge through the charge transport element includes transporting the charge through a progressive band offset tunnel barrier.

13. A memory cell, comprising:

a gate element;

a charge transport element;

a plurality of charge storage elements, wherein:

each respective charge storage element is configured to store a charge transported from the gate element and through the charge transport element to that respective charge storage element; and

each respective charge storage element includes a nitride material and a silicon-rich nitride material; and

an additional charge storage element, wherein the additional charge storage element includes a gallium nitride material.

14. The memory cell of claim 13 , wherein the memory cell includes a charge blocking element configured to prevent leakage of the charge stored by each respective charge storage element, wherein the charge blocking element includes:

a hafnium oxynitride material; and

a silicon dioxide material.

15. The memory cell of claim 13 , wherein the nitride material of each respective charge storage element is a silicon oxynitride material.

16. The memory cell of claim 13 , wherein the charge transport element includes:

a hafnium oxynitride material; and

an oxide material.

17. The memory cell of claim 16 , wherein the charge transport element includes an oxygen-rich silicon oxynitride material.

18. The memory cell of claim 16 , wherein the charge transport element includes a silicon-rich nitride material.

19. A memory cell, comprising:

a gate element;

a charge transport element adjacent the gate element;

a volatile charge storage element configured to store a first charge transported from the gate element and through the charge transport element, wherein the volatile charge storage element includes a nitride material;

a non-volatile charge storage element configured to store a second charge transported from the gate element and through the charge transport element, wherein the non-volatile charge storage element includes a gallium nitride material; and

a charge blocking element configured to prevent leakage of the first charge stored by the volatile charge storage element and leakage of the second charge stored by the non-volatile storage element.

20. The memory cell of claim 19 , wherein the memory cell includes a silicon substrate element adjacent the charge blocking element.

21. The memory cell of claim 19 , wherein the charge blocking element includes:

a hafnium oxynitride material; and

an oxygen-rich silicon oxynitride material.

22. The memory cell of claim 21 , wherein the charge blocking element includes:

a silicon-rich nitride material; and

an aluminum oxide material.

23. The memory cell of claim 19 , wherein the charge blocking element includes:

a hafnium oxynitride material; and

an oxide material.

24. The memory cell of claim 19 , wherein the charge transport element includes:

a hafnium oxynitride material; and

a silicon-rich nitride material.

25. The memory cell of claim 24 , wherein the charge transport element includes:

an additional silicon-rich nitride material; and

a nitride material.