Sputtering target and method for manufacturing the same
A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.
1. A sputtering target comprising:
a first region comprising indium, zinc and an element M1; and
a second region comprising indium, zinc, and an element M2,
wherein the element M1 is one or more kinds of elements selected from Al, Si, Mg, Zr, Be and B,
wherein the element M2 is one or more kinds of elements selected from Ti, Ge, Sn, V, Ni, Mo, W, and Ta,
wherein an atomic ratio of indium in the second region is higher than an atomic ratio of the element M1 in the first region,
wherein the first region has higher resistance than the second region,
wherein one of the first region and the second region has a nano-crystal structure, and
wherein the sputtering target is capable of forming a channel region of a metal oxide.
2. The sputtering target according to claim 1 , wherein each of the first region and the second region comprises a cluster.
3. The sputtering target according to claim 1 , wherein the nano-crystal structure has a size larger than or equal to 0.5 nm and smaller than or equal to 3 nm.
4. The sputtering target according to claim 1 , wherein each of the first region and the second region is in a particulate form.
5. The sputtering target according to claim 1 , wherein each of the first region and the second region has a diameter of less than 10 μm.
6. A sputtering target comprising:
a first region comprising indium, zinc and an element M1; and
a second region comprising indium, zinc, and an element M2,
wherein the element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be and B,
wherein the element M2 is one or more kinds of elements selected from Ti, Ge, Sn, V, Ni, Mo, W, and Ta,
wherein an atomic ratio of indium in the second region is higher than an atomic ratio of the element M1 in the first region,
wherein one of the first region and the second region has a nano-crystal structure, and
wherein the first region has higher resistance than the second region.
7. The sputtering target according to claim 6 , wherein the element M1 is Ga.
8. The sputtering target according to claim 6 , wherein the nano-crystal structure has a size larger than or equal to 0.5 nm and smaller than or equal to 3 nm.
9. The sputtering target according to claim 6 ,
wherein an atomic ratio of In:M1:M2:Zn in the first region and the second region is 5:0.5:0.5:7, and
wherein In, M1, M2, and Zn correspond to indium, the element M1, the element M2, and zinc, respectively.
10. A sputtering target comprising:
a first region comprising indium, zinc and an element M1; and
a second region comprising indium and an element M2,
wherein the element M1 is one or more kinds of elements selected from Al, Si, Mg, Zr, Be and B,
wherein the element M2 is one or more kinds of elements selected from Ti, Ge, Sn, V, Ni, Mo, W, and Ta,
wherein an atomic ratio of indium in the second region is higher than an atomic ratio of the element M1 in the first region,
wherein the first region has higher resistance than the second region, and
wherein the sputtering target is capable of forming a channel region of a metal oxide.
11. The sputtering target according to claim 10 , wherein each of the first region and the second region comprises a cluster.
12. The sputtering target according to claim 10 ,
wherein one of the first region and the second region has a nano-crystal structure, and
wherein the nano-crystal structure has a size larger than or equal to 0.5 nm and smaller than or equal to 3 nm.
13. The sputtering target according to claim 10 , wherein each of the first region and the second region is in a particulate form.
14. The sputtering target according to claim 10 , wherein each of the first region and the second region has a diameter of less than 10 μm.
15. The sputtering target according to claim 10 ,
wherein an atomic ratio of In:M1:M2:Zn in the first region and the second region is 5:0.5:0.5:7, and
wherein In, M1, M2, and Zn correspond to indium, the element M1, the element M2, and zinc, respectively.
16. The sputtering target according to claim 1 ,
wherein an atomic ratio of In:M1:M2:Zn in the first region and the second region is 5:0.5:0.5:7, and
wherein In, M1, M2, and Zn correspond to indium, the element M1, the element M2, and zinc, respectively.