Power amplifier module
A power amplifier module includes an amplifier transistor and a bias circuit. A first power supply voltage based on a first operation mode or a second power supply voltage based on a second operation mode is supplied to the amplifier transistor. The amplifier transistor receives a first signal and outputs a second signal obtained by amplifying the first signal. The bias circuit supplies a bias current to the amplifier transistor. The bias circuit includes first and second resistors and first and second transistors. The first transistor is connected in series with the first resistor and is turned ON by a first bias control voltage which is supplied when the first operation mode is used. The second transistor is connected in series with the second resistor and is turned ON by a second bias control voltage which is supplied when the second operation mode is used.
1. A power amplifier module comprising:
an amplifier transistor having a plurality of fingers and to which a first power supply voltage or a second power supply voltage is supplied based on a mode signal supplied to the power amplifier module, the amplifier transistor receiving a first signal and outputting a second signal obtained by amplifying the first signal; and
a bias circuit that supplies a bias current to the amplifier transistor, the bias circuit including:
a plurality of bias transistors connected in parallel, each of the plurality of bias transistors being turned ON by a bias control voltage based on a mode signal indicating an operation mode to be used to amplify the first signal;
a first resistor;
a common node, wherein the first resistor is connected at a first end to an emitter of a first of the plurality of bias transistors and at a second end to the common node, and wherein an emitter of a second of the plurality of bias transistors is connected to the common node; and
a plurality of resistors, wherein each one of the plurality of resistors is connected at a first end to the common node and at a second end to a respective one of the plurality of fingers of the amplifier transistor.
2. The power amplifier module of claim 1 , wherein the first of the plurality of bias transistors is turned ON by a first bias control voltage which is supplied when the mode signal indicates that a first operation mode is to be used to amplify the first signal and the second of the plurality of bias transistors is turned ON by a second bias control voltage which is supplied when the mode signal indicates that a second operation mode is to be used to amplify the first signal.
3. The power amplifier module of claim 2 , wherein the first operation mode is a high power mode and the second operation mode is a low power mode.
4. The power amplifier module of claim 2 , wherein the first operation mode is an envelope tracking (ET) mode and the second operation mode is an average power tracking (APT) mode.
5. The power amplifier module according to claim 3 , wherein the first bias control voltage is greater than the second bias control voltage.
6. The power amplifier module according to claim 4 , wherein the first bias control voltage is greater than the second bias control voltage.
7. A multi-stage power amplifier module, each stage of a plurality of amplification stages comprising:
an amplifier transistor having a plurality of fingers and to which a first power supply voltage or a second power supply voltage is supplied based on a mode signal supplied to the power amplifier module, the amplifier transistor receiving a first signal and outputting a second signal obtained by amplifying the first signal; and
a bias circuit that supplies a bias current to the amplifier transistor, the bias circuit including:
a first resistor,
a first bias transistor that is connected in series with the first resistor,
a second resistor,
a second bias transistor that is connected in series with the second resistor, and
a common node, wherein the first resistor is connected at a first end to an emitter of the first bias transistors and at a second end to the common node, and the second resistor is connected at a first end to an emitter of the second bias transistor and at a second end to the common node.
8. The power amplifier module of claim 7 , wherein, for each stage, the first bias transistor is turned ON by a first bias control voltage which is supplied when the mode signal indicates that a first operation mode is to be used to amplify the first signal and the second bias transistor is turned ON by a second bias control voltage which is supplied when the mode signal indicates that a second operation mode is to be used to amplify the first signal.
9. The power amplifier module of claim 8 , wherein, for each stage, the first operation mode is a high power mode and the second operation mode is a low power mode.
10. The power amplifier module of claim 8 , wherein, for each stage, the first operation mode is an envelope tracking (ET) mode and the second operation mode is an average power tracking (APT) mode.
11. A multi-stage power amplifier module, each stage of a plurality of amplification stages comprising:
an amplifier transistor having a plurality of fingers and to which a first power supply voltage or a second power supply voltage is supplied based on a mode signal supplied to the power amplifier module, the amplifier transistor receiving a first signal and outputting a second signal obtained by amplifying the first signal; and
a bias circuit that supplies a bias current to the amplifier transistor, the bias circuit including:
a plurality of bias transistors connected in parallel, each of the plurality of bias transistors being turned ON by a bias control voltage based on a mode signal indicating an operation mode to be used to amplify the first signal;
a first resistor;
a common node, wherein the first resistor is connected at a first end to an emitter of a first of the plurality of bias transistors and at a second end to the common node, and wherein an emitter of a second of the plurality of bias transistors is connected to the common node; and
a plurality of resistors, wherein each one of the plurality of resistors is connected at a first end to the common node and at a second end to a respective one of the plurality of fingers of the amplifier transistor.
12. The power amplifier module of claim 11 , wherein, for each stage, the first of the plurality of bias transistors is turned ON by a first bias control voltage which is supplied when the mode signal indicates that a first operation mode is to be used to amplify the first signal and the second of the plurality of bias transistors is turned ON by a second bias control voltage which is supplied when the mode signal indicates that a second operation mode is to be used to amplify the first signal.
13. The power amplifier module of claim 12 , wherein, for each stage, the first operation mode is a high power mode and the second operation mode is a low power mode.
14. The power amplifier module of claim 12 , wherein, for each stage, the first operation mode is an envelope tracking (ET) mode and the second operation mode is an average power tracking (APT) mode.
15. A multi-stage power amplifier module, each stage of a plurality of amplification stages comprising:
an amplifier transistor having a plurality of fingers and to which a first power supply voltage or a second power supply voltage is supplied based on a mode signal supplied to the power amplifier module, the amplifier transistor receiving a first signal and outputting a second signal obtained by amplifying the first signal; and
a first stage comprising:
a first bias circuit that supplies a bias current to the amplifier transistor, the first bias circuit including:
a first resistor,
a first bias transistor that is connected in series with the first resistor,
a second resistor, and
a second bias transistor that is connected in series with the second resistor; and
a second stage comprising:
a second bias circuit that supplies a bias current to the amplifier transistor, the second bias circuit including:
a plurality of bias transistors connected in parallel, each of the plurality of bias transistors being turned ON by a bias control voltage based on a mode signal indicating an operation mode to be used to amplify the first signal;
a first resistor;
a common node, wherein the first resistor is connected at a first end to an emitter of a first of the plurality of bias transistors and at a second end to the common node, and wherein an emitter of a second of the plurality of bias transistors is connected to the common node; and
a second plurality of resistors, wherein each one of the second plurality of resistors is connected at a first end to the common node and at a second end to a respective one of the plurality of fingers of the amplifier transistor.
16. The power amplifier module of claim 9 , wherein, for each stage, the first of the plurality of bias transistors is turned ON by a first bias control voltage which is supplied when the mode signal indicates that a first operation mode is to be used to amplify the first signal and the second of the plurality of bias transistors is turned ON by a second bias control voltage which is supplied when the mode signal indicates that a second operation mode is to be used to amplify the first signal.
17. The power amplifier module of claim 16 , wherein, for each stage, the first operation mode is a high power mode and the second operation mode is a low power mode.
18. The power amplifier module of claim 16 , wherein, for each stage, the first operation mode is an envelope tracking (ET) mode and the second operation mode is an average power tracking (APT) mode.