Ion beam apparatus including slit structure for extracting ion beam, etching method using the same, and method for manufacturing magnetic memory device using the ion beam apparatus

1. An ion beam apparatus, comprising:

a source part generating plasma therein;

a process part in which a process using an ion beam is performed; and

a slit structure provided between the source part and the process part, the slit structure extracting the ion beam from the plasma, the slit structure including at least one electrode structure having a slit penetrating the electrode structure and extending in a first direction, wherein the at least one electrode structure includes a pair of first electrodes spaced apart from each other in a second direction intersecting the first direction, the pair of first electrodes having a first slit extending in the first direction therebetween, wherein

the ion beam is irradiated onto a substrate at an incident angle through the slit, and

the incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction.

2. The ion beam apparatus as claimed in claim 1 , wherein:

the slit structure further includes a plate part provided between the source part and the process part,

the electrode structure has a line shape extending in the first direction,

the electrode structure penetrates the plate part, and

the first direction is parallel to a flat surface of the plate part.

3. The ion beam apparatus as claimed in claim 2 , wherein the plate part is an insulator.

4. The ion beam apparatus as claimed in claim 1 , wherein the electrode structure includes:

a pair of second electrodes spaced apart from each other in the second direction, the pair of second electrodes having a second slit extending in the first direction therebetween,

wherein the pair of second electrodes overlap with the pair of first electrodes in a third direction perpendicular to the first and second directions, and

wherein the first slit and the second slit overlap with each other in the third direction to define the slit.

5. The ion beam apparatus as claimed in claim 4 , wherein each of the pair of first electrodes and the pair of second electrodes has a line shape extending in the first direction.

6. The ion beam apparatus as claimed in claim 5 , wherein each of the pair of second electrodes overlaps a corresponding one of the pair of first electrodes in the third direction.

7. The ion beam apparatus as claimed in claim 4 , wherein a first voltage applied to the pair of first electrodes is different from a second voltage applied to the pair of second electrodes.

8. The ion beam apparatus as claimed in claim 4 , wherein:

the electrode structure further includes a pair of insulators spaced apart from each other in the second direction,

the pair of first electrodes and the pair of second electrodes are provided between the pair of insulators, and

each of the pair of insulators is coupled to an end portion of a corresponding one of the pair of first electrodes and an end portion of a corresponding one of the pair of second electrodes.

9. The ion beam apparatus as claimed in claim 4 , wherein:

the electrode structure further includes a pair of third electrodes spaced apart from each other in the second direction, the pair of third electrodes having a third slit extending in the first direction therebetween,

the pair of third electrodes overlap the pair of first electrodes and the pair of second electrodes in the third direction,

the pair of second electrodes are between the pair of first electrodes and the pair of third electrodes, and

wherein the first slit, the second slit, and the third slit overlap each other in the third direction to define the slit.

10. The ion beam apparatus as claimed in claim 9 , wherein a first voltage applied to the pair of first electrodes, a second voltage applied to the pair of second electrodes, and a third voltage applied to the pair of third electrodes are different from each other.

11. The ion beam apparatus as claimed in claim 1 , wherein:

the slit structure includes a plurality of electrode structures spaced apart from each other in a second direction intersecting the first direction,

each of the plurality of electrode structures is rotatable on its rotation axis parallel to the first direction, and

a rotation direction of an odd-numbered electrode structure of the plurality of electrode structures is opposite to a rotation direction of an even-numbered electrode structure of the plurality of electrode structures.

12. The ion beam apparatus as claimed in claim 11 , wherein:

the slit structure further includes a plate part provided between the source part and the process part,

each of the plurality of electrode structures has a line shape extending in the first direction, and

each of the plurality of electrode structures penetrates the plate part, and

the first direction is parallel to a flat surface of the plate part.

13. The ion beam apparatus as claimed in claim 11 , wherein the ion beam includes:

a first ion beam irradiated onto the substrate through the slit of the odd-numbered electrode structure; and

a second ion beam irradiated onto the substrate through the slit of the even-numbered electrode structure, wherein the first ion beam and the second ion beam are symmetrically irradiated.

14. The ion beam apparatus as claimed in claim 1 , further comprising:

a stage in the process part and on which the substrate is loaded,

wherein the first direction is parallel to an upper surface of the substrate, and

wherein the stage changes a horizontal position of the substrate along a second direction which is parallel to the upper surface of the substrate and intersects the first direction.

15. The ion beam apparatus as claimed in claim 1 , wherein first electrode of the pair of first electrodes are insulated from one another.