Semiconductor element
A semiconductor element includes a first coil substantially located at a first plane; a second coil substantially located at the first plane; a connecting section that connects the first coil and the second coil; a third coil substantially located at a second plane different from the first plane; and a fourth coil substantially located at the second plane. The third coil and the first coil are connected through a through structure, and the fourth coil and the second coil are connected through a through structure. The third coil and the fourth are not directly connected.
1. A semiconductor element, comprising:
a first spiral coil formed with a first end and a second end and comprising a first outer turn and a first inner turn that is located in a region surrounded by said first outer turn;
a second spiral coil, wherein said second spiral coil and said first spiral coil are located in substantially a same metal layer, and said second spiral comprises a second outer turn and a second inner turn that is located in a region surrounded by said second outer turn;
a connecting section, connecting said first spiral coil and said second spiral coil; and
a guide segment section, with one end connected to said first end and said second end;
wherein, a region surrounded by said second spiral coil and at least one of said guide segment section and said connecting section partially overlap;
wherein, said connecting section and a region surrounded by said second spiral coil partially overlap, and said connecting section connects said first inner turn and said second inner turn.
2. The semiconductor element of claim 1 , wherein said first spiral coil comprises:
an outer turn; and
an inner turn, located in a region surrounded by said outer turn;
wherein, said guide segment section and a region surrounded by said second spiral coil partially overlap, and said first end and said second end are located at said inner turn.
3. The semiconductor element of claim 2 , wherein said guide segment section further partially overlaps a region surrounded by said first spiral coil.
4. The semiconductor element of claim 1 , wherein
said first spiral coil comprises:
a first outer turn; and
a first inner turn, located in a region surrounded by said first outer turn; and
said second spiral coil comprises:
a second outer turn; and
a second inner turn, located in a region surrounded by said second outer turn;
wherein, said connecting section and a region surrounded by said second spiral coil partially overlap, and said connecting section connects said first outer turn and said second outer turn.
5. The semiconductor element of claim 4 , wherein said guide segment section further partially overlaps a region surrounded by said first spiral coil.
6. The semiconductor element of claim 4 , wherein said guide segment section and a region surrounded by said first inner turn do not overlap.
7. The semiconductor element of claim 1 , wherein said guide segment section further partially overlaps a region surrounded by said first spiral coil.
8. The semiconductor element of claim 1 , wherein said guide segment section and a region surrounded by said first inner turn do not overlap.
9. The semiconductor element of claim 1 , wherein said first end and said second end are located at said first outer turn.