Semiconductor constructions having fluorocarbon material
Some embodiments include a construction having a horizontally-extending layer of fluorocarbon material over a semiconductor construction. Some embodiments include methods of filling openings that extend into a semiconductor construction. The methods may include, for example, printing the material into the openings or pressing the material into the openings. The construction may be treated so that surfaces within the openings adhere the material provided within the openings while surfaces external of the openings do not adhere the material. In some embodiments, the surfaces external of the openings are treated to reduce adhesion of the material.
1. A semiconductor construction comprising a horizontally-extending layer of hydrofluorocarbon material over a semiconductor construction, the hydrofluorocarbon material comprising an adhesion-reducing layer; and
an adhesive-promoting layer over the adhesion-reducing layer.
2. The semiconductor construction of claim 1 comprising insulative material pillars extending vertically through the layer of fluorocarbon material.
3. The semiconductor construction of claim 1 comprising conductive material pillars extending vertically through the layer of fluorocarbon material.
4. The semiconductor construction of claim 1 wherein the semiconductor construction comprises an opening, and further comprising another layer of fluorocarbon material in the opening.
5. The semiconductor construction of claim 4 further comprising an adhesive-promoting layer in the opening over the another layer of fluorocarbon material.
6. The semiconductor construction of claim 5 wherein the adhesive-promoting layer in the opening comprises an insulative material.
7. The semiconductor construction of claim 6 wherein the insulative material comprises one or more of silicon dioxide, silicon nitride, aluminum oxide, hafnium oxide and titanium oxide.
8. The semiconductor construction of claim 5 wherein the adhesive-promoting layer in the opening comprises a conductive material.
9. The semiconductor construction of claim 8 wherein the conductive material comprises conductively-doped semiconductor material, metal or metal nitride.
10. The semiconductor construction of claim 9 wherein:
the conductively-doped semiconductor material comprises conductively-doped silicon or conductively-doped germanium;
the metal comprises tungsten or titanium; and
the metal nitride comprises titanium nitride or tungsten nitride.
11. A semiconductor construction comprising a horizontally-extending layer of fluorocarbon material over an upper surface of a semiconductor substrate, the fluorocarbon material comprising hydrogen; and
a plate contacting the upper surface of the semiconductor substrate.
12. The semiconductor construction of claim 11 wherein the semiconductor substrate comprises an opening extending through the fluorocarbon material and the upper surface.
13. The semiconductor construction of claim 12 further comprising an adhesion-promoting layer in the opening.
14. The semiconductor construction of claim 12 wherein the fluorocarbon material is only on the upper surface of the semiconductor substrate.
15. The semiconductor construction of claim 13 wherein:
the fluorocarbon material is only on the upper surface of the semiconductor substrate; and
the adhesion-promoting layer is only in the opening.
16. The semiconductor construction of claim 12 wherein the fluorocarbon material is only on the upper surface of the semiconductor substrate, and further comprising an adhesion-promoting layer over the fluorocarbon material and in the opening.
17. The semiconductor construction of claim 12 wherein the fluorocarbon material is in the opening, and further comprising an adhesion-promoting layer in the opening.
18. The semiconductor construction of claim 17 wherein the adhesion-promoting layer is only in the opening.
19. The semiconductor construction of claim 11 , wherein the fluorocarbon material comprises an adhesion-reducing material.
20. The semiconductor construction of claim 11 comprising insulative material pillars extending vertically through the layer of fluorocarbon material.
21. The semiconductor construction of claim 11 comprising conductive material pillars extending vertically through the layer of fluorocarbon material.
22. The semiconductor construction of claim 1 wherein the adhesive-promoting layer is directly against the adhesion-reducing layer.
23. The semiconductor construction of claim 1 wherein the adhesive-promoting layer is spaced from the adhesion-reducing layer by pad material.
24. The semiconductor construction of claim 4 wherein at least one wall in the opening is in a charged state.
25. The semiconductor construction of claim 12 wherein the plate comprises a headspace aligned over the opening.
26. The semiconductor construction of claim 12 wherein at least one wall in the opening is in a charged state.
27. The semiconductor construction of claim 12 wherein the plate comprises a headspace comprising substantially the same cross-section dimensions as the opening.