Semiconductor device including fuse circuit

1. A semiconductor device comprising:

a plurality of input terminals; and

a plurality of fuse circuits configured to be programmed based on input signals respectively supplied to the input terminals, a number of the plurality of fuse circuits equal to or more than (2 M −1), M equal to a number of the plurality of input terminals.

2. The semiconductor device according to claim 1 , wherein the number of the plurality of fuse circuits is equal to 2 M and only one of the fuse circuits is programmed regardless of patterns of the input signals.

3. The semiconductor device according to claim 1 , wherein the number of the plurality of fuse circuits is equal to (2 M −1) and none of the fuse circuits is programmed responsive to a specified pattern of the input signals.

4. The semiconductor device according to claim 1 , further comprising an encoder configured to encode output signals of the fuse circuits to produce M number of encoded signals.

5. The semiconductor device according to claim 4 , further comprising a memory cell array including a plurality of memory cells and an address control circuit coupled to the memory cell array, the address control circuit configured to receive the M number of encoded signals, receive an address signals and compare the M number of encoded signals with at least a part of the address signals to determine whether or not at least one of the memory cells corresponding to the address signals is displaced to at least one of other memory cells.

6. The semiconductor device according to claim 1 , wherein each of the fuse circuits is configured to be programmed by a voltage applied therebetween.

7. A semiconductor device comprising:

a plurality of first input terminals;

a plurality of first fuse circuits configured to be programmed based on first input signals respectively supplied to the first input terminals, a number of the plurality of first fuse circuits equal to or more than (2 M −1), M equal to a number of the plurality of first input terminals;

a plurality of second input terminals; and

a plurality of second fuse circuits configured to be programmed based on second input signals respectively supplied to the second input terminals, a number of the plurality of second fuse circuits equal to or more than (2 N −1), N equal to a number of the plurality of second input terminals.

8. The semiconductor device according to claim 7 , further comprising a first encoder configured to encode first output signals of the first fuse circuits to produce M number of first encoded signals and a second encoder configured to encode second output signals of the second fuse circuits to produce N number of second encoded signals.

9. The semiconductor device according to claim 8 , further comprising a memory cell array including a plurality of memory cells and an address control circuit coupled to the memory cell array, the address control circuit configured to receive the M number of first encoded signals and the N number of second encoded signals, receive address signals and compare combination signals of the M number of first encoded signals and the N number of second encoded signals with at least a part of the address signals to determine whether or not at least one of the memory cells corresponding to the address signals is displaced to at least one of other memory cells.

10. The semiconductor device according to claim 7 , wherein M and N are equal to each other.

11. The semiconductor device according to claim 7 , wherein M and N are different from each other.

12. A semiconductor device comprising:

a plurality of fuse circuits configured to be programmed based on a plurality of input signals supplied to a plurality of input terminals, a number of the plurality of fuse circuits equal to or greater than (2 M −1), wherein M is equal to a number of the plurality of input signals.

13. The semiconductor device of claim 12 , further comprising:

a decoder coupled to the plurality of input terminals and configured to receive address bits and decode the address bits and provide the input signals to the plurality of fuse circuits,

wherein the plurality of fuse circuits are configured to be programmed responsive to the plurality of input signals, respectively.

14. The semiconductor device according to claim 13 , further comprising:

a plurality of latch circuits having output nodes coupled to the plurality of input nodes, respectively.

15. The semiconductor device according to claim 14 , further comprising:

a plurality of bit lines;

a plurality of word lines; and

a plurality of memory cells arranged at intersections of the bit lines and the word lines, respectively;

wherein the fuse circuits are configured to store programmed information that indicates address information of at least a part of one of the plurality of memory cells.

16. The semiconductor device according to claim 13 , wherein a number of address nodes is equal to M (M is an integer of two or more) to receive M number of the address bits and the decoder is configured to output 2 M number of the input signals.

17. The semiconductor device according to claim 16 , wherein a number of the fuse circuits is equal to 2 M .

18. The semiconductor device according to claim 17 , wherein the decoder is configured to activate one of the input signals and inactivate the others of the input signals.

19. The semiconductor device according to claim 13 , wherein a number of address nodes is equal to M (M is an integer of two or more) to receive M number of the address bits and the decoder is configured to output (2 M −1) number of the input signals.

20. The semiconductor device according to claim 19 , wherein the decoder is configured to inactivate all of the input signals when the address bits take a first pattern and the decoder is configured to activate one of the input signals when the address bits take a second pattern different from the first pattern.