IP Library Granted Patent US 10,186,492
Granted Patent B1
US 10,186,492 · App. 15/652,249 · Granted Jan 22, 2019

Package structure and manufacturing method thereof

Inventors: Albert Wan (Hsinchu, TW); Chao-Wen Shih (Hsinchu County, TW); Shou-Zen Chang (Hsinchu, TW); Nan-Chin Chuang (Taipei, TW)
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
H01L23/66H01L21/565H01L21/568H01L21/6835H01L23/3135H01L23/481H01L23/60H01L24/13H01L24/19H01L24/20H01Q1/2283H01L22/32H01L24/11H01L2221/68359H01L2223/6677H01L2224/0401H01L2224/11002H01L2224/13023H01L2224/13024H01L2224/211
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Quick Facts
Patent No.
US 10,186,492
App. No.
15/652,249
Granted
Jan 22, 2019
Kind
B1
Abstract

A package structure includes at least one die, an antenna element, and at least one through interlayer via. The antenna element is located on the at least one die. The at least one through interlayer via is located between the antenna element and the at least one die, wherein the antenna element is electrically connected to the at least one die through the at least one through interlayer via.

Claims (51)

1. A package structure, comprising:

a molding compound;

an antenna element molded in the molding compound;

at least one die located on the molding compound;

a redistribution layer located between the at least one die and the molding compound, wherein the redistribution layer includes a ground plane portion and a location of the antenna element is overlapped with a location of the ground plane portion in a vertical projection on the redistribution layer; and

conductive elements connected to a first side of the redistribution layer, wherein the at least one die is connected to the first side of the redistribution layer, and positioning locations of the conductive elements are aside of a positioning location of the at least one die in the vertical projection.

2. The package structure of claim 1 , further comprising at least one through interlayer via encapsulated in the molding compound, wherein the at least one through interlayer via is connected to the antenna element and the antenna element is electrically connected to the at least one die through the redistribution layer and the at least one through interlayer via.

3. The package structure of claim 1 , wherein the location of the antenna element is overlapped with a location of the at least one die in the vertical projection.

4. The package structure of claim 1 , wherein the redistribution layer is located between the conductive elements and the antenna element.

5. The package structure of claim 1 , further comprising a protective layer located on the molding compound and covering the antenna element.

6. A package structure, comprising:

at least one die;

an antenna element located above the at least one die; and

a through interlayer via wall, located between the antenna element and the at least one die, wherein the through interlayer via wall is connected to the antenna element, an air cavity is located between the antenna element and the at least one die and surrounded by the through interlayer via wall, and the antenna element is electrically connected to the at least one die.

7. The package structure of claim 6 , further comprising:

a first redistribution layer connected to the at least one die;

a second redistribution layer located on the at least one die, wherein the at least one die is located between the first redistribution layer and the second redistribution layer; and

at least two through interlayer vias, connected to the first redistribution layer and the second redistribution layer and arranged aside the at least one die,

wherein the antenna element is electrically connected to the at least one die through the through interlayer via wall, the second redistributor layer, the at least two through interlayer vias, and the first redistribution layer.

8. The package structure of claim 7 , further comprising a molding compound, wherein the antenna element, the through interlayer via wall, the at least one die, the second redistribution layer and the at least two through interlayer vias are molded in the molding compound, wherein an inner sidewall of the through interlayer via wall, a surface of the antenna element surrounded by the inner sidewall of the through interlayer via wall and facing toward the at least one die and a surface of the second redistribution layer surrounded by the inner sidewall of the through interlayer via wall and facing toward the antenna element are free of the molding compound.

9. The package structure of claim 7 , further comprising:

conductive elements, connected to the first redistribution layer, wherein the first redistribution layer is located between the conductive elements and the at least one die.

10. The package structure of claim 6 , further comprising

a cap layer, located on the antenna element, wherein the antenna element is located between the cap layer and the through interlayer via wall; and

a metallic ring structure, disposed on a surface of the cap layer opposite to the antenna element, wherein the metallic ring structure is located over the through interlayer via wall, and a shape of the metallic ring structure corresponds to a shape of the through interlayer via wall.

11. A manufacturing method of a package structure, comprising:

forming a first redistribution layer on a first carrier;

forming at least one through interlayer via on the first carrier, wherein the at least one through interlayer via is electrically connected to the first redistribution layer;

encapsulating the at least one through interlayer via in a molding compound;

disposing at least one die on the first carrier, wherein the at least one die is electrically connected to the first redistribution layer;

forming an antenna element, wherein the antenna element is at least partially in contact with the molding compound and electrically connected to the first redistribution layer, and the antenna element is overlapped with the at least one die in a vertical projection on the first redistribution layer; and

disposing conductive elements on the first redistribution layer, wherein the first redistribution layer is located between the molding compound and the conductive elements.

12. The manufacturing method of claim 11 , wherein the antenna element is formed on the first carrier before forming the first redistribution layer, the at least one through interlayer via and at least one die on the first carrier.

13. The manufacturing method of claim 12 , wherein after the at least one first through interlayer via is formed on the antenna element, the antenna element and the at least one through interlayer via are encapsulated in the molding compound, and then the first distribution layer is formed on the at least one through interlayer via, wherein the at least one die and the conductive elements are disposed on a surface of the first redistribution layer opposite to the molding compound and are not molded in the molding compound.

14. The manufacturing method of claim 11 , before disposing the at least one die on the first carrier and forming the at least one through interlayer via, the first redistribution layer and the antenna element, further comprising:

forming a second redistribution layer on a second carrier; and

forming a through interlayer via wall on the second redistribution layer, wherein the through interlayer via wall is electrically connected to the second redistribution layer;

encapsulating the second redistribution layer and the through interlayer via wall in the molding compound; and

debonding the second carrier from the second redistribution layer and disposing the second redistribution layer on the first carrier by contacting the through interlayer via wall and the first carrier.

15. The manufacturing method of claim 14 , wherein encapsulating the second redistribution layer and the through interlayer via wall comprises partially encapsulating the second redistribution layer and the through interlayer via wall, wherein an inner sidewall of the through interlayer via wall and a side of the second redistribution layer surrounded by the inner sidewall of the through interlayer via wall are not covered by the molding compound.

16. The manufacturing method of claim 14 , wherein disposing the at least one die comprises disposing the at least one die on a side of the second redistribution layer opposite to the through interlayer via wall after the at least one through interlayer via being formed on the second redistribution layer, wherein the at least one die is formed on the side of the second redistribution layer where the at least one through interlayer via disposed, and encapsulating the at least one through interlayer via in the molding compound comprises encapsulating the at least one die and the at least one through interlayer via in the molding compound.

17. The manufacturing method of claim 14 , wherein forming the first redistribution layer comprises forming the first redistribution layer on the molding compound after encapsulating the at least one through interlayer via, wherein the first distribution layer is electrically connected to the second redistribution layer through the at least one through interlayer via, and the at least one die is located between the first redistribution layer and the second redistribution layer.

18. The manufacturing method of claim 14 , after disposing conductive elements on the first redistribution layer, further comprising:

debonding the first carrier from the through interlayer via wall and the molding compound; and

mounting the conductive elements into a polymer film, wherein the conductive elements are embedded into the polymer film.

19. The manufacturing method of claim 18 , after mounting the conductive elements into the polymer film, further comprising:

providing a cap layer having a first side disposed with a first metallic pattern; and

disposing the cap layer on the through interlayer via wall and the molding compound via the first side, and wherein the first side of the cap layer, an inner sidewall of the through interlayer via wall, a side of the second redistribution layer facing toward the first side of the cap layer and surrounded by the inner sidewall of the through interlayer via wall that not covered by the molding compound constitute an accommodated space for an air cavity, and

wherein forming an antenna element comprises connecting the first metallic pattern to a portion of the through interlayer via wall so that the first metallic pattern and the portion of the through interlayer via wall connected to the first metallic pattern together form the antenna element.

20. The manufacturing method of claim 19 , further comprising:

forming a second metallic pattern on a second side of the cap layer opposite to the first side disposed with the antenna element, wherein the second metallic pattern is disposed over the through interlayer via wall, a shape of the second metallic pattern corresponds to a shape of the through interlayer via wall, and the cap layer is located between the antenna element and the second metallic pattern.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 4, 2018
From: WAN, ALBERT; SHIH, CHAO-WEN; CHANG, SHOU-ZEN; CHUANG, NAN-CHIN
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 045100/0879 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 4, 2018
From: WAN, ALBERT; SHIH, CHAO-WEN; CHANG, SHOU-ZEN; CHUANG, NAN-CHIN
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 045100/0884 →
Cited By (1)
US 12,506,268