Solid-state imaging device with suppression of color mixture, manufacturing method thereof, and electronic apparatus
A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
1. An imaging device, comprising:
a semiconductor substrate including a first side as a light-receiving side, and a second side opposite to the first side;
a plurality of photoelectric conversion regions in the semiconductor substrate, the plurality of the photoelectric conversion regions comprising a first photoelectric conversion region, a second photoelectric conversion region, a third photoelectric conversion region, and a fourth photoelectric conversion region;
a floating diffusion region shared by the first, the second, the third and the fourth photoelectric conversion regions;
a first element isolation region disposed between the first photoelectric conversion region and the second photoelectric conversion region; and
a multilayer wiring layer disposed at the second side of the semiconductor substrate, wherein
the first element isolation region comprises a p-type semiconductor layer,
the first element isolation region comprises a first trench including a first light-shielding film, and
an insulating film is disposed in the first trench and disposed over the first photoelectric conversion region and the second photoelectric conversion region.
2. The imaging device according to claim 1 , wherein the first, the second, the third, and the fourth photoelectric conversion regions are arranged in a 2×2 matrix.
3. The imaging device according to claim 2 , further comprising a reset transistor, an amplification transistor, and a selection transistor.
4. The imaging device according to claim 3 , wherein the plurality of photoelectric conversion elements share the reset transistor, the amplification transistor, and the selection transistor.
5. The imaging device according to claim 4 , wherein the first light-shielding film is a first metallic film.
6. The imaging device according to claim 1 , wherein the first trench includes an opening at the first side of the semiconductor substrate.
7. The imaging device according to claim 1 , further comprising a fifth photoelectric conversion region.
8. The imaging device according to claim 1 , further comprising a second trench that includes a second light-shielding film.
9. The imaging device according to claim 8 , wherein the second light-shielding film is a second metallic film.
10. The imaging device according to claim 8 , wherein the insulating film is disposed over an entirety of at least one of the first photoelectric conversion region and the second photoelectric conversion region.
11. An imaging device, comprising:
a semiconductor substrate including a first side as a light-receiving side, and a second side opposite to the first side;
a plurality of photoelectric conversion regions in the semiconductor substrate, the plurality of the photoelectric conversion regions comprising a first photoelectric conversion region, a second photoelectric conversion region, a third photoelectric conversion region, and a fourth photoelectric conversion region;
a floating diffusion region shared by the first, the second, the third, and the fourth photoelectric conversion regions;
a plurality of element isolation regions comprising a first element isolation region disposed between the first photoelectric conversion region and the second photo electric conversion region; and
a multilayer wiring layer disposed at the second side of the semiconductor substrate, wherein
the first element isolation region comprises a p-type semiconductor layer,
the first element isolation region comprises a first trench including an opening at the first side of the semiconductor substrate, and
an insulating film is disposed in the first trench and disposed over the first photoelectric conversion region and the second photoelectric conversion region.
12. The imaging device according to claim 11 , wherein the plurality of photoelectric conversion regions arranged in a 2×2 matrix.
13. The imaging device according to claim 12 , further comprising a reset transistor, an amplification transistor, and a selection transistor.
14. The imaging device according to claim 13 , wherein the plurality of photoelectric conversion elements share the reset transistor, the amplification transistor, and the selection transistor.
15. The imaging device according to claim 14 , wherein the first trench includes a first light-shielding film.
16. The imaging device according to claim 15 , wherein the first light-shielding film comprises a metallic material.
17. The imaging device according to claim 14 , wherein the first trench includes an opening at the first side of the semiconductor substrate.
18. The imaging device according to claim 11 , further comprising a fifth photoelectric conversion region.
19. The imaging device according to claim 18 , further comprising a second trench that includes a second light-shielding film.
20. The imaging device according to claim 19 , wherein the second light-shielding film is a second metallic film.
21. An electronic apparatus, comprising:
an imaging device, comprising:
a semiconductor substrate including a first side as a light-receiving side, and a second side opposite to the first side;
a plurality of photoelectric conversion regions in the semiconductor substrate, the plurality of the photoelectric conversion regions comprising a first photoelectric conversion region, a second photoelectric conversion region, a third photoelectric conversion region, and a fourth photoelectric conversion region;
a floating diffusion region shared by the first, the second, the third and the fourth photoelectric conversion regions;
a first element isolation region disposed between the first photoelectric conversion region and the second photoelectric conversion region; and
a multilayer wiring layer disposed at the second side of the semiconductor substrate, wherein
the first element isolation region comprises a p-type semiconductor layer,
the first element isolation region comprises a first trench including a first light-shielding film, and
an insulating film is disposed in the first trench and disposed over the first photoelectric conversion region and the second photoelectric conversion region.
22. The electronic apparatus according to claim 21 , wherein the first, the second, the third, and the fourth photoelectric conversion regions are arranged in a 2×2 matrix.
23. The electronic apparatus according to claim 22 , further comprising a reset transistor, an amplification transistor, and a selection transistor.
24. The electronic apparatus according to claim 23 , wherein the plurality of photoelectric conversion elements share the reset transistor, the amplification transistor, and the selection transistor.
25. The electronic apparatus according to claim 24 , wherein the first light-shielding film is a first metallic film.
26. The electronic apparatus according to claim 21 , wherein the first trench includes an opening at the first side of the semiconductor substrate.
27. The electronic apparatus according to claim 21 , further comprising a fifth photoelectric conversion region.
28. The electronic apparatus according to claim 21 , further comprising a second trench that includes a second light-shielding film.
29. The electronic apparatus according to claim 28 , wherein the second light-shielding film is a second metallic film.
30. The electronic apparatus according to claim 28 , wherein the insulating film is disposed over an entirety of at least one of the first photoelectric conversion region and the second photoelectric conversion region.