Display device and electronic device
A display device including a display portion with an extremely high resolution is provided. The display device includes a pixel circuit and a light-emitting element. The pixel circuit includes a first element layer including a first transistor and a second element layer including a second transistor. A channel formation region of the first transistor includes silicon. The first transistor has a function of driving the light-emitting element. The second transistor functions as a switch. A channel formation region of the second transistor includes a metal oxide. The metal oxide functions as a semiconductor. The second element layer is provided over the first element layer.
1. A display device comprising: a pixel circuit including a first element layer comprising a first transistor and a second element layer comprising a second transistor; and a light-emitting element including a first conductive layer, an Electro-Luminescent (EL) layer over the first conductive layer, a second conductive layer, wherein a channel formation region of the first transistor comprises silicon, wherein a channel formation region of the second transistor comprises a metal oxide functioning as a semiconductor, wherein the first transistor is configured to drive the light-emitting element, wherein the second transistor functions is configured to operate as a switch for supplying voltage to a gate of the first transistor, wherein the second element layer is provided over the first element layer, wherein an insulating layer is provided on and in contact with an end portion of the first conductive layer, and wherein the EL layer is overlapping with the channel formation region of the first transistor, the channel formation region of the second transistor, and the insulating layer.
2. The display device according to claim 1 ,
wherein the second element layer further comprises a capacitor including a terminal electrically connected to the gate of the first transistor.
3. The display device according to claim 1 ,
wherein the second element layer further comprises a third transistor configured to operate as a switch for monitoring an amount of current flowing through the first transistor.
4. An electronic device comprising:
the display device according to claim 1 ;
a lens;
an operation button; and
a fixing member.
5. A display device comprising: a pixel circuit including a first element layer comprising a first transistor and a second element layer comprising a second transistor; and a light-emitting element including a first conductive layer, an Electro-Luminescent (EL) layer over the first conductive layer, a second conductive layer, wherein a channel formation region of the first transistor comprises silicon, wherein a channel formation region of the second transistor comprises a metal oxide functioning as a semiconductor, wherein the first transistor is configured to drive the light-emitting element, wherein the second transistor functions is configured to operate as a switch for supplying voltage to a gate of the first transistor, wherein the second element layer is provided over the first element layer, wherein the light-emitting element is provided over the second element layers wherein an insulating layer is provided on and in contact with an end portion of the first conductive layer, and wherein the EL layer is overlapping with the channel formation region of the first transistor, the channel formation region of the second transistor, and the insulating layer.
6. The display device according to claim 5 ,
wherein the second element layer further comprises a capacitor including a terminal electrically connected to the gate of the first transistor.
7. The display device according to claim 5 ,
wherein the second element layer further comprises a third transistor configured to operate as a switch for monitoring an amount of current flowing through the first transistor.
8. An electronic device comprising:
the display device according to claim 5 ;
a lens;
an operation button; and
a fixing member.
9. A display device comprising: a pixel circuit including a first element layer comprising a first transistor and a second element layer comprising a second transistor; a light-emitting element including a first conductive layer, an Electro-Luminescent (EL) layer over the first conductive layer, a second conductive layer; and a driver circuit comprising a fourth transistor, wherein a channel formation region of each of the First transistor and the fourth transistor comprises silicon, wherein a channel formation region of the second transistor comprises a metal oxide functioning as a semiconductor, wherein the first transistor is configured to drive the light-emitting element, wherein the second transistor functions is configured to operate as a switch for supplying voltage to a gate of the first transistor, wherein the second element layer is provided over the first element layer, wherein an insulating layer is provided on and in contact with an end portion of the first conductive layer, and wherein the EL layer is overlapping with the channel formation region of each of the first transistor and the fourth transistor, the channel formation region of the second transistor, and the insulating layer.
10. The display device according to claim 9 ,
wherein the second element layer further comprises a capacitor including a terminal electrically connected to the gate of the first transistor.
11. The display device according to claim 9 ,
wherein the second element layer further comprises a third transistor configured to operate as a switch for monitoring an amount of current flowing through the first transistor.
12. An electronic device comprising:
the display device according to claim 9 ;
a lens;
an operation button; and
a fixing member.
13. A display device comprising: a pixel circuit including a first element layer comprising a first transistor and a second element layer comprising a second transistor; a light-emitting element including a first conductive layer an Electro-Luminescent (EL) layer over the first conductive layer, a second conductive layer; and a driver circuit comprising a fourth transistor, wherein a channel formation region of each of the first transistor and the fourth transistor comprises silicon, wherein a channel formation region of the second transistor comprises a metal oxide functioning as a semiconductor, wherein the first transistor is configured to drive the light-emitting element, wherein the second transistor functions is configured to operate as a switch for supplying voltage to a gate of the first transistor, wherein the second element layer is provided over the first element layer, wherein the light-emitting element is provided over the second element layer, wherein an insulating layer is provided on and in contact with an end portion of the first conductive layer, and wherein the EL layer is overlapping with the channel formation region of each of the first transistor and the fourth transistor, the channel formation region of the second transistor, and the insulating layer.
14. The display device according to claim 13 ,
wherein the second element layer further comprises a capacitor including a terminal electrically connected to the gate of the first transistor.
15. The display device according to claim 13 ,
wherein the second element layer further comprises a third transistor configured to operate as a switch for monitoring an amount of current flowing through the first transistor.
16. An electronic device comprising:
the display device according to claim 13 ;
a lens;
an operation button; and
a fixing member.