IP Library Granted Patent US 12,469,463
Granted Patent B2
US 12,469,463 · App. 18/380,221 · Granted Nov 11, 2025

Display device and electronic device

Inventors: Takayuki Ikeda (Atsugi, JP); Hidetomo Kobayashi (Isehara, JP); Hideaki Shishido (Atsugi, JP); Kiyotaka Kimura (Isehara, JP); Takashi Nakagawa (Sagamihara, JP); Kosei Nei (Yokohama, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G09G3/3275G09G3/3233G09G3/3266G09G5/377H10D30/6755H10K59/1275G09G3/36G09G2300/0426G09G2300/0809G09G2310/0297G09G2340/12
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,469,463
App. No.
18/380,221
Granted
Nov 11, 2025
Kind
B2
Abstract

A high-definition display device is provided. A small display device is provided. In the display device, a first layer and a second layer are stacked and provided. The first layer includes a gate driver circuit and a source driver circuit, and the second layer includes a display portion. The gate driver circuit and the source driver circuit are provided to include a region overlapping with the display portion. The gate driver circuit and the source driver circuit have an overlap region where they are not strictly separated from each other. Five or more gate driver circuits and five or more source driver circuits can be provided.

Claims (36)

1 . A display device comprising:

a display portion comprising pixels;

a gate driver circuit; and

a source driver circuit,

wherein the gate driver circuit comprises a first transistor, a second transistor, a third transistor, and a fourth transistor in a first region,

wherein the source driver circuit comprises a fifth transistor positioned between the first transistor and the second transistor in the first region,

wherein the first transistor is adjacent to the fifth transistor in a first direction,

wherein the second transistor is adjacent to the fifth transistor, in the first direction,

wherein the third transistor is adjacent to the fifth transistor in a second direction perpendicular to the first direction, and

wherein the fourth transistor is adjacent to the fifth transistor in the second direction.

2 . The display device according to claim 1 ,

wherein the pixel includes a display element, and

wherein the display element is a light-emitting element.

3 . The display device according to claim 1 ,

wherein no transistor is positioned between the first transistor and the fifth transistor,

wherein no transistor is positioned between the second transistor and the fifth transistor,

wherein no transistor is positioned between the third transistor and the fifth transistor, and

wherein no transistor is positioned between the fourth transistor and the fifth transistor.

4 . A display device comprising:

a display portion comprising pixels;

a gate driver circuit; and

a source driver circuit,

wherein the source driver circuit comprises a first transistor, a second transistor, a third transistor, and a fourth transistor in a first region,

wherein the gate driver circuit comprises a fifth transistor positioned between the first transistor and the second transistor in the first region,

wherein the first transistor is adjacent to the fifth transistor, in a first direction,

wherein the second transistor is adjacent to the fifth transistor in the first direction,

wherein the third transistor is adjacent to the fifth transistor in a second direction perpendicular to the first direction, and

wherein the fourth transistor is adjacent to the fifth transistor in the second direction.

5 . The display device according to claim 4 ,

wherein the pixel includes a display element, and

wherein the display element is a light-emitting element.

6 . The display device according to claim 4 ,

wherein no transistor is positioned between the first transistor and the fifth transistor,

wherein no transistor is positioned between the second transistor and fifth transistor,

wherein no transistor is positioned between the third transistor and the fifth transistor, and

wherein no transistor is positioned between the fourth transistor and the fifth transistor.

Priority Claims (3)
JP 2018-095244 · May 17, 2018 · national
JP 2018-108416 · Jun 6, 2018 · national
JP 2018-159543 · Aug 28, 2018 · national
Continuity (3)
Continuation 17887708 · Aug 15, 2022
Continuation 17055285
Related Publication 20240062724A1 · Feb 22, 2024
References Cited (82)
US 6121942A · Sanou et al. · 2000 [cited by applicant]
US 6956234B2 · Kato et al. · 2005 [cited by applicant]
US 7323714B2 · Kato et al. · 2008 [cited by applicant]
US 8253836B2 · Tsuchiya · 2012 [cited by applicant]
US 8520312B2 · Miyano · 2013 [cited by applicant]
US 8976090B2 · Yamamoto et al. · 2015 [cited by applicant]
US 9496408B2 · Yamazaki et al. · 2016 [cited by applicant]
US 9651835B2 · Moriwaki · 2017 [cited by applicant]
US 9741865B2 · Yamazaki et al. · 2017 [cited by applicant]
US 9899536B2 · Yamazaki et al. · 2018 [cited by applicant]
US 10354574B2 · Kobayashi et al. · 2019 [cited by applicant]
US 10373983B2 · Takahashi et al. · 2019 [cited by applicant]
US 10700098B2 · Takahashi et al. · 2020 [cited by applicant]
US 10705395B2 · Shimoshikiryoh et al. · 2020 [cited by applicant]
US 11003037B2 · Shimoshikiryoh et al. · 2021 [cited by applicant]
US 11404447B2 · Takahashi et al. · 2022 [cited by applicant]
US 11460742B2 · Shimoshikiryoh et al. · 2022 [cited by applicant]
US 11676971B2 · Takahashi et al. · 2023 [cited by applicant]
US 12027528B2 · Takahashi et al. · 2024 [cited by applicant]
US 20030080932A1 · Konno et al. · 2003 [cited by applicant]
US 20030166336A1 · Kato et al. · 2003 [cited by applicant]
US 20040263440A1 · Kimura et al. · 2004 [cited by applicant]
US 20070001982A1 · Ito et al. · 2007 [cited by applicant]
US 20100176395A1 · Choi et al. · 2010 [cited by applicant]
US 20110186852A1 · Kimura et al. · 2011 [cited by applicant]
US 20120127412A1 · Lee · 2012 [cited by examiner]
US 20120223978A1 · Yamamoto et al. · 2012 [cited by applicant]
US 20130082901A1 · Watanabe et al. · 2013 [cited by applicant]
US 20130215344A1 · Kim et al. · 2013 [cited by applicant]
US 20140002334A1 · Jung · 2014 [cited by examiner]
US 20150228666A1 · Paolini, Jr. · 2015 [cited by applicant]
US 20150364070A1 · Lv et al. · 2015 [cited by applicant]
US 20160035307A1 · Jeon · 2016 [cited by examiner]
US 20160225306A1 · Shin · 2016 [cited by examiner]
US 20170061857A1 · Lee et al. · 2017 [cited by applicant]
US 20170092177A1 · Kobayashi et al. · 2017 [cited by applicant]
US 20170178586A1 · Kim et al. · 2017 [cited by applicant]
US 20170357113A1 · Yamazaki et al. · 2017 [cited by applicant]
US 20180012549A1 · Lee et al. · 2018 [cited by applicant]
US 20180130438A1 · Imajo · 2018 [cited by examiner]
US 20180144706A1 · Cho · 2018 [cited by examiner]
US 20180182748A1 · Han · 2018 [cited by examiner]
US 20180188867A1 · Yeh · 2018 [cited by applicant]
US 20180308871A1 · Wu et al. · 2018 [cited by applicant]
US 20190025660A1 · Shimoshikiryoh et al. · 2019 [cited by applicant]
US 20240203353A1 · Lee · 2024 [cited by examiner]
US 20240355829A1 · Takahashi et al. · 2024 [cited by applicant]
CN 001115901A · 1996 [cited by applicant]
CN 102654979A · 2012 [cited by applicant]
CN 103155202A · 2013 [cited by applicant]
CN 204440369U · 2015 [cited by applicant]
CN 104903949A · 2015 [cited by applicant]
CN 106133816A · 2016 [cited by applicant]
CN 107579075A · 2018 [cited by applicant]
EP 0660367A · 1995 [cited by applicant]
EP 0806789A · 1997 [cited by applicant]
EP 2628200A · 2013 [cited by applicant]
EP 3096370A · 2016 [cited by applicant]
EP 3103113A · 2016 [cited by applicant]
JP 2001013525A · 2001 [cited by applicant]
JP 2003233333A · 2003 [cited by applicant]
JP 2008281986A · 2008 [cited by applicant]
JP 2011090183A · 2011 [cited by applicant]
JP 2011141412A · 2011 [cited by applicant]
JP 2011145447A · 2011 [cited by applicant]
JP 2012042569A · 2012 [cited by applicant]
JP 2012185328A · 2012 [cited by applicant]
JP 2013546012 · 2013 [cited by applicant]
JP 2014007399A · 2014 [cited by applicant]
JP 2017062474A · 2017 [cited by applicant]
JP 2018025777A · 2018 [cited by applicant]
KR 20090125006A · 2009 [cited by applicant]
KR 20130143051A · 2013 [cited by applicant]
KR 20160119195A · 2016 [cited by applicant]
KR 20170075618A · 2017 [cited by applicant]
WO WO2012050586 · 2012 [cited by applicant]
WO WO2015120288 · 2015 [cited by applicant]
WO WO2017051288 · 2017 [cited by applicant]
WO WO2017119338 · 2017 [cited by applicant]
Chinese Office Action (Application No. 201980031507.4) dated Apr. 11, 2024. [cited by applicant]
International Search Report (Application No. PCT/IB2019/053804) dated Aug. 13, 2019. [cited by applicant]
Written Opinion (Application No. PCT/IB2019/053804) dated Aug. 13, 2019. [cited by applicant]