Display device and electronic device
A display device including a display portion with an extremely high resolution is provided. The display device includes a pixel circuit and a light-emitting element. The pixel circuit includes a first element layer including a first transistor and a second element layer including a second transistor. A channel formation region of the first transistor includes silicon. The first transistor has a function of driving the light-emitting element. The second transistor functions as a switch. A channel formation region of the second transistor includes a metal oxide. The metal oxide functions as a semiconductor. The second element layer is provided over the first element layer.
1. A display device comprising a display portion comprising a plurality of pixels, each of the plurality of pixels comprising:
a light-emitting element;
a first transistor;
a second transistor;
a third transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor is connected to a gate of the second transistor,
wherein a gate of the first transistor is connected to a gate of the third transistor,
wherein one of a source and a drain of the third transistor is connected to the light-emitting element,
wherein the other of the source and the drain of the third transistor is connected to a wiring,
wherein a first terminal of the capacitor is connected to the one of the source and the drain of the first transistor,
wherein a second terminal of the capacitor is connected to the one of the source and the drain of the third transistor,
wherein the first transistor comprises an oxide semiconductor layer in a channel formation region,
wherein the second transistor comprises silicon in a channel formation region,
wherein an insulating layer is provided over the gate of the second transistor, and
wherein the oxide semiconductor layer is provided over the insulating layer.
2. The display device according to claim 1 ,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
3. The display device according to claim 1 , further comprising a gate line driver circuit,
wherein the gate line driver circuit comprises a circuit formed of a plurality of transistors having the same conductivity type, and
wherein each of the plurality of transistors comprises silicon in a channel formation region.
4. The display device according to claim 1 ,
wherein the insulating layer comprises silicon nitride.
5. The display device according to claim 1 ,
wherein the gate of the first transistor is provided over the oxide semiconductor layer, and
wherein the gate of the first transistor comprises molybdenum and titanium.
6. The display device according to claim 1 ,
wherein a thickness of the oxide semiconductor layer is greater than or equal to 3 nm and less than or equal to 50 nm.
7. The display device according to claim 1 ,
wherein one of a source and a drain of the second transistor is electrically connected to the light-emitting element.
8. A display device comprising a display portion comprising a plurality of pixels, each of the plurality of pixels comprising:
a light-emitting element;
a first transistor;
a second transistor;
a third transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor is connected to a gate of the second transistor,
wherein a gate of the first transistor is connected to a gate of the third transistor,
wherein one of a source and a drain of the third transistor is connected to the light-emitting element,
wherein the other of the source and the drain of the third transistor is connected to a wiring,
wherein a first terminal of the capacitor is connected to the one of the source and the drain of the first transistor,
wherein a second terminal of the capacitor is connected to the one of the source and the drain of the third transistor,
wherein the first transistor comprises an oxide semiconductor layer in a channel formation region,
wherein the second transistor comprises silicon in a channel formation region,
wherein a first insulating layer comprising silicon oxide is provided over and in contact with the gate of the second transistor,
wherein a second insulating layer comprising silicon nitride is provided over the first insulating layer,
wherein a third insulating layer comprising silicon oxide is provided over the second insulating layer, and
wherein the oxide semiconductor layer is provided over and in contact with the third insulating layer.
9. The display device according to claim 8 ,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
10. The display device according to claim 8 , further comprising a gate line driver circuit,
wherein the gate line driver circuit comprises a circuit formed of a plurality of transistors having the same conductivity type, and
wherein each of the plurality of transistors comprises silicon in a channel formation region.
11. The display device according to claim 8 ,
wherein the gate of the first transistor is provided over the oxide semiconductor layer, and
wherein the gate of the first transistor comprises molybdenum and titanium.
12. The display device according to claim 8 ,
wherein a thickness of the oxide semiconductor layer is greater than or equal to 3 nm and less than or equal to 50 nm.
13. The display device according to claim 8 ,
wherein one of a source and a drain of the second transistor is electrically connected to the light-emitting element.
14. A display device comprising a display portion comprising a plurality of pixels, each of the plurality of pixels comprising:
a light-emitting element;
a first transistor;
a second transistor;
a third transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor is connected to a gate of the second transistor,
wherein a gate of the first transistor is connected to a gate of the third transistor,
wherein one of a source and a drain of the third transistor is connected to the light-emitting element,
wherein the other of the source and the drain of the third transistor is connected to a wiring,
wherein a first terminal of the capacitor is connected to the one of the source and the drain of the first transistor,
wherein a second terminal of the capacitor is connected to the one of the source and the drain of the third transistor,
wherein the first transistor comprises an oxide semiconductor layer in a channel formation region,
wherein the second transistor comprises silicon in a channel formation region,
wherein the second transistor comprises gate electrodes provided under and over the channel formation region of the second transistor,
wherein an insulating layer is provided over the second transistor, and
wherein the oxide semiconductor layer is provided over the insulating layer.
15. The display device according to claim 14 ,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
16. The display device according to claim 14 , further comprising a gate line driver circuit,
wherein the gate line driver circuit comprises a circuit formed of a plurality of transistors having the same conductivity type, and
wherein each of the plurality of transistors comprises silicon in a channel formation region.
17. The display device according to claim 14 ,
wherein the insulating layer comprises silicon nitride.
18. The display device according to claim 14 ,
wherein the gate of the first transistor is provided over the oxide semiconductor layer, and
wherein the gate of the first transistor comprises molybdenum and titanium.
19. The display device according to claim 14 ,
wherein a thickness of the oxide semiconductor layer is greater than or equal to 3 nm and less than or equal to 50 nm.
20. The display device according to claim 14 ,
wherein one of a source and a drain of the second transistor is electrically connected to the light-emitting element.
21. A display device comprising a display portion comprising a plurality of pixels, each of the plurality of pixels comprising:
a light-emitting element;
a first transistor;
a second transistor;
a third transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor is connected to a gate of the second transistor,
wherein a gate of the first transistor is connected to a gate of the third transistor,
wherein one of a source and a drain of the third transistor is connected to the light-emitting element,
wherein the other of the source and the drain of the third transistor is connected to a wiring,
wherein a first terminal of the capacitor is connected to the one of the source and the drain of the first transistor,
wherein a second terminal of the capacitor is connected to the one of the source and the drain of the third transistor,
wherein the first transistor comprises an oxide semiconductor layer in a channel formation region,
wherein the second transistor comprises a semiconductor layer comprising silicon in a channel formation region,
wherein a first insulating layer is provided over the gate of the second transistor,
wherein the oxide semiconductor layer is provided over the first insulating layer,
wherein the light-emitting element comprises a first conductive layer, a layer comprising an organic material over the first conductive layer, and a second conductive layer over the layer comprising the organic material,
wherein a second insulating layer is provided over the first conductive layer,
wherein the layer comprising the organic material is provided over the second insulating layer, and
wherein the layer comprising the organic material overlaps with the oxide semiconductor layer and the semiconductor layer comprising silicon.
22. The display device according to claim 21 ,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
23. The display device according to claim 21 , further comprising a gate line driver circuit,
wherein the gate line driver circuit comprises a circuit formed of a plurality of transistors having the same conductivity type, and
wherein each of the plurality of transistors comprises silicon in a channel formation region.
24. The display device according to claim 21 ,
wherein the first insulating layer comprises silicon nitride.
25. The display device according to claim 21 ,
wherein the gate of the first transistor is provided over the oxide semiconductor layer, and
wherein the gate of the first transistor comprises molybdenum and titanium.
26. The display device according to claim 21 ,
wherein a thickness of the oxide semiconductor layer is greater than or equal to 3 nm and less than or equal to 50 nm.
27. The display device according to claim 21 ,
wherein one of a source and a drain of the second transistor is electrically connected to the light-emitting element.
28. A display device comprising a display portion comprising a plurality of pixels, each of the plurality of pixels comprising:
a light-emitting element;
a first transistor;
a second transistor;
a third transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor is connected to a gate of the second transistor,
wherein a gate of the first transistor is connected to a gate of the third transistor,
wherein one of a source and a drain of the third transistor is connected to the light-emitting element,
wherein the other of the source and the drain of the third transistor is connected to a wiring,
wherein a first terminal of the capacitor is connected to the one of the source and the drain of the first transistor,
wherein a second terminal of the capacitor is connected to the one of the source and the drain of the third transistor,
wherein the first transistor comprises an oxide semiconductor layer in a channel formation region,
wherein the second transistor comprises single-crystal silicon in a channel formation region,
wherein an insulating layer is provided over the gate of the second transistor, and
wherein the oxide semiconductor layer is provided over the insulating layer.
29. The display device according to claim 28 ,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
30. The display device according to claim 28 , further comprising a gate line driver circuit,
wherein the gate line driver circuit comprises a circuit formed of a plurality of transistors having the same conductivity type, and
wherein each of the plurality of transistors comprises silicon in a channel formation region.
31. The display device according to claim 28 ,
wherein the insulating layer comprises silicon nitride.
32. The display device according to claim 28 ,
wherein the gate of the first transistor is provided over the oxide semiconductor layer, and
wherein the gate of the first transistor comprises molybdenum and titanium.
33. The display device according to claim 28 ,
wherein a thickness of the oxide semiconductor layer is greater than or equal to 3 nm and less than or equal to 50 nm.
34. The display device according to claim 28 ,
wherein one of a source and a drain of the second transistor is electrically connected to the light-emitting element.