Display device and electronic device

1. A display device comprising:

a pixel circuit including a first element layer comprising a first transistor and a second element layer comprising a second transistor; and

a light-emitting element including a first conductive layer, an Electro-Luminescent (EL) layer over the first conductive layer, and a second conductive layer over the EL layer,

wherein a channel formation region of the first transistor comprises silicon,

wherein a channel formation region of the second transistor comprises a metal oxide containing indium (In), gallium (Ga), and zinc (Zn),

wherein the first transistor has a function of driving the light-emitting element,

wherein the second transistor has a function of operating as a switch for supplying voltage to a gate of the first transistor,

wherein the second element layer is provided over the first element layer,

wherein an insulating layer is provided on and in contact with an end portion of the first conductive layer, and

wherein the EL layer is overlapping with the channel formation region of the first transistor, the channel formation region of the second transistor, and the insulating layer.

2. The display device according to claim 1 ,

wherein the second element layer further comprises a capacitor including a terminal electrically connected to the gate of the first transistor.

3. The display device according to claim 1 ,

wherein the second element layer further comprises a third transistor having a function of operating as a switch for monitoring an amount of current flowing through the first transistor.

4. The display device according to claim 1 ,

wherein the first transistor has a double-gate structure.

5. An electronic device comprising:

the display device according to claim 1 ;

a lens;

an operation button; and

a fixing member.

6. A display device comprising:

a pixel circuit including a first element layer comprising a first transistor and a second element layer comprising a second transistor; and

a light-emitting element including a first conductive layer, an Electro-Luminescent (EL) layer over the first conductive layer, and a second conductive layer over the EL layer,

wherein a channel formation region of the first transistor comprises silicon,

wherein a channel formation region of the second transistor comprises a metal oxide containing indium (In), gallium (Ga), and zinc (Zn),

wherein the first transistor has a function of driving the light-emitting element,

wherein the second transistor has a function of operating as a switch for supplying voltage to a gate of the first transistor,

wherein the second element layer is provided over the first element layer,

wherein the light-emitting element is provided over the second element layer,

wherein an insulating layer is provided on and in contact with an end portion of the first conductive layer, and

wherein the EL layer is overlapping with the channel formation region of the first transistor, the channel formation region of the second transistor, and the insulating layer.

7. The display device according to claim 6 ,

wherein the second element layer further comprises a capacitor including a terminal electrically connected to the gate of the first transistor.

8. The display device according to claim 6 ,

wherein the second element layer further comprises a third transistor having a function of operating as a switch for monitoring an amount of current flowing through the first transistor.

9. The display device according to claim 6 ,

wherein the first transistor has a double-gate structure.

10. An electronic device comprising:

the display device according to claim 6 ;

a lens;

an operation button; and

a fixing member.

11. A display device comprising:

a pixel circuit including a first element layer comprising a first transistor and a second element layer comprising a second transistor;

a light-emitting element including a first conductive layer, an Electro-Luminescent (EL) layer over the first conductive layer, and a second conductive layer over the EL layer; and

a driver circuit comprising a fourth transistor,

wherein a channel formation region of each of the first transistor and the fourth transistor comprises silicon,

wherein a channel formation region of the second transistor comprises a metal oxide containing indium (In), gallium (Ga), and zinc (Zn),

wherein the first transistor has a function of driving the light-emitting element,

wherein the second transistor has a function of operating as a switch for supplying voltage to a gate of the first transistor,

wherein the second element layer is provided over the first element layer,

wherein an insulating layer is provided on and in contact with an end portion of the first conductive layer, and

wherein the EL layer is overlapping with the channel formation region of each of the first transistor and the fourth transistor, the channel formation region of the second transistor, and the insulating layer.

12. The display device according to claim 11 ,

wherein the second element layer further comprises a capacitor including a terminal electrically connected to the gate of the first transistor.

13. The display device according to claim 11 ,

wherein the second element layer further comprises a third transistor having a function of operating as a switch for monitoring an amount of current flowing through the first transistor.

14. The display device according to claim 11 ,

wherein the first transistor has a double-gate structure.

15. An electronic device comprising:

the display device according to claim 11 ;

a lens;

an operation button; and

a fixing member.

16. A display device comprising:

a pixel circuit including a first element layer comprising a first transistor and a second element layer comprising a second transistor;

a light-emitting element including a first conductive layer, an Electro-Luminescent (EL) layer over the first conductive layer, and a second conductive layer over the layer; and

a driver circuit comprising a fourth transistor,

wherein a channel formation region of each of the first transistor and the fourth transistor comprises silicon,

wherein a channel formation region of the second transistor comprises a metal oxide containing indium (In), gallium (Ga), and zinc (Zn),

wherein the first transistor has a function of driving the light-emitting element,

wherein the second transistor has a function of operating as a switch for supplying voltage to a gate of the first transistor,

wherein the second element layer is provided over the first element layer,

wherein the light-emitting element is provided over the second element layer,

wherein an insulating layer is provided on and in contact with an end portion of the first conductive layer, and

wherein the EL layer is overlapping with the channel formation region of each of the first transistor and the fourth transistor, the channel formation region of the second transistor, and the insulating layer.

17. The display device according to claim 16 ,

wherein the second element layer further comprises a capacitor including a terminal electrically connected to the gate of the first transistor.

18. The display device according to claim 16 ,

wherein the second element layer further comprises a third transistor having a function of operating as a switch for monitoring an amount of current flowing through the first transistor.

19. The display device according to claim 16 ,

wherein the first transistor has a double-gate structure.

20. An electronic device comprising:

the display device according to claim 16 ;

a lens;

an operation button; and

a fixing member.

21. A display device comprising:

a pixel circuit comprising:

a first transistor comprising a first gate electrode and a first gate insulating layer in direct contact with the first gate electrode;

a second transistor comprising a second gate electrode and a second gate insulating layer in direct contact with the second gate electrode; and

a capacitor electrically connected to the first transistor and the second transistor;

a first insulating layer over the second transistor;

a light-emitting element comprising a first conductive layer over the first insulating layer, an Electro-Luminescent (EL) layer over the first conductive layer, and a second conductive layer over the EL layer;

a second insulating layer over and in direct contact with an end portion of the first conductive layer; and

a driver circuit comprising a third transistor,

wherein a channel formation region of each of the first transistor and the third transistor comprises silicon,

wherein a channel formation region of the second transistor comprises a metal oxide containing indium (In), gallium (Ga), and zinc (Zn),

wherein the first transistor has a function of driving the light-emitting element,

wherein the second transistor has a function of operating as a switch for supplying voltage to the first gate electrode of the first transistor,

wherein the first gate electrode of the first transistor, one of a source and a drain of the second transistor, and a terminal of the capacitor are directly connected to one another,

wherein the second gate insulating layer is provided over the first gate insulating layer, and

wherein the first conductive layer is overlapping with the first gate electrode and the first gate insulating layer.

22. The display device according to claim 21 , further comprising a fourth transistor having a function of operating as a switch for monitoring an amount of current flowing through the first transistor.

23. The display device according to claim 21 , wherein the first transistor has a double-gate structure.

24. An electronic device comprising:

the display device according to claim 21 ;

a lens;

an operation button; and

a fixing member.