Fin cut without residual fin defects
View Patent ↗A method of forming semiconductor fins is provided. Sacrificial fins are provided on a surface of substrate. A hard mask layer, formed around the sacrificial fins and the gaps therebetween, is made coplanar with a topmost surface of the sacrificial fins. A fin cut mask then covers a portion of the sacrificial fins and partly covers a sacrificial fin. Trenches are formed in the hard mask layer by removing sacrificial fins not covered by the fin cut mask and that portion of the sacrificial fin not partly covered by the fin cut mask. Spacers are formed on the sidewalls of the trenches and a plug is formed in the trench formed by removing that portion of the sacrificial fin not partly covered by the fin cut mask. Semiconductor fins are grown epitaxially in the trenches having the spacers from the exposed surface of the substrate upward.
1. A semiconductor structure comprising:
a semiconductor substrate having a topmost semiconductor material surface;
(i) an array of sacrificial fins directly contacting the topmost semiconductor material surface of the semiconductor substrate, wherein each of the sacrificial fins is of substantially the same width;
(ii) at least one sacrificial fin directly contacting the topmost semiconductor material surface of the semiconductor substrate and having a width that is less than the width of (i) the sacrificial fins of the array, wherein each sacrificial fin is composed of a dielectric material; and
(iii) an array of semiconductor fins directly contacting the topmost semiconductor material surface of the semiconductor substrate, wherein each of the semiconductor fins is of substantially the same width, and wherein the width of the semiconductor fins (iii) is less than the width of the sacrificial fins (i) of the array.
2. The semiconductor structure of claim 1 , wherein the at least one sacrificial fin (ii) has a width that is about 0.1 to about 0.7 times the width of the sacrificial fins (i) of the array.
3. The semiconductor structure of claim 2 , wherein the at least one sacrificial fin (ii) has a width that is about 0.3 to about 0.5 times the width of the sacrificial fins (i) of the array.
4. The semiconductor structure of claim 1 , wherein the semiconductor fins (iii) have a width that is about 0.1 to about 0.7 times the width of the sacrificial fins (i) of the array.
5. The semiconductor structure of claim 1 , wherein the lower portions of semiconductor fins (iii) are in trenches that have spacers on the trench sidewalls.
6. The semiconductor structure of claim 5 , wherein the width of a sacrificial fins (i) of the array is substantially equal to the width of a semiconductor fins (iii) plus the thickness of the spacers.
7. The semiconductor structure of claim 1 , wherein the semiconductor substrate comprises a bulk semiconductor substrate.
8. The semiconductor structure of claim 1 , wherein the semiconductor substrate comprises a semiconductor-on-insulator substrate, and wherein each sacrificial fin is present on a topmost semiconductor material layer of the semiconductor-on-insulator substrate.
9. The semiconductor structure of claim 1 , wherein the dielectric material is silicon nitride.
10. The semiconductor structure of claim 1 , wherein the dielectric material is silicon boron carbon nitride.
11. The semiconductor structure of claim 1 , further comprising a functional gate straddling over each of the semiconductor fins (iii).
12. The semiconductor structure of claim 1 , wherein each of the semiconductor fins (iii) has an epitaxial relationship with the topmost semiconductor material surface of the semiconductor substrate.
13. The semiconductor structure of claim 1 , wherein each sacrificial fin has a same height.
14. The semiconductor structure of claim 1 , wherein each of the semiconductor fins (iii) has a same height and wherein a topmost surface of each of the semiconductor fins (iii) is coplanar with a topmost surface of each sacrificial fin.