Memory blocks and related devices and methods
Vertical memory blocks for semiconductor devices include a memory cell region including an array of memory cell pillars and at least one via region including a dielectric stack of alternating dielectric materials and at least one conductive via extending through the dielectric stack. Semiconductor devices including a vertical memory block include at least one vertical memory block, which includes slots extending between adjacent memory cells of a three-dimensional array. The slots are separated by a first distance in a first portion of the block, and by a second, greater distance in a second portion of the block. Methods of forming vertical memory blocks include forming slots separated by a first distance in a memory array region and by a second, greater distance in a via region. At least one conductive via is formed through a stack of alternating first and second dielectric materials in the via region.
1. A memory block of a semiconductor device, the memory block comprising:
a memory cell region including an array of memory cell pillars;
at least one stair step region;
at least one via region at least partially located between the memory cell region and the at least one stair step region, the at least one via region including at least one conductive via extending through a stack of alternating dielectric materials; and
a dielectric material within slots extending through the memory block, the slots separated by a first distance in the memory cell region and by a second, greater distance in each of the at least one stair step region and the at least one via region.
2. The memory block of claim 1 , wherein the array of memory cell pillars comprises an array of vertical memory cell pillars extending vertically through the memory block.
3. The memory block of claim 1 , wherein the at least one stair step region comprises two stair step regions located remote from one another, each of the two stair step regions comprising at least one stair step structure defining contact regions of conductive word lines extending along and adjacent to the dielectric material within the slots.
4. The memory block of claim 3 , further comprising electrical connections configured to connect the at least one conductive via to the conductive word lines.
5. The memory block of claim 3 , wherein the at least one via region comprises two via regions, each of the two via regions being at least partially located longitudinally between a centrally located memory cell region and a respective stair step region, each of the two stair step regions located remote from the centrally located memory cell region.
6. The memory block of claim 3 , wherein the slots filled with the dielectric material comprise at least one additional slot filled with the dielectric material in the at least one stair step region, the at least one additional slot not connected with any other slot of the slots.
7. The memory block of claim 6 , wherein:
a terminal end of the at least one additional slot is located at about the first distance or less from one of the slots;
a connection region is located between the at least one additional slot and the one of the slots; and
the at least one stair step structure comprises four stair step structures connected to one other through the connection region.
8. The memory block of claim 1 , wherein at least a portion of the at least one via region comprises:
first slots filled with the dielectric material defining first conductive word lines associated with a first stair step region; and
second slots filled with the dielectric material defining second conductive word lines associated with a second stair step region, wherein the first slots and the second slots are arranged in an interlocking-J pattern.
9. The memory block of claim 1 , wherein at least some of the slots filled with the dielectric material converge with adjacent slots to form a narrow end region between converging conductive word lines.
10. The memory block of claim 1 , wherein the at least one conductive via is located within at least one of the memory cell region or the at least one stair step region.
11. A semiconductor device comprising:
sub-array circuitry; and
at least one memory block operatively coupled to the sub-array circuitry, the at least one memory block comprising:
an array of memory cells in a memory cell region;
at least one stair step region;
at least one via region at least partially located between the memory cell region and the at least one stair step region;
slots filled with a dielectric material and extending through the at least one memory block; and
conductive access lines respectively coupled to the array of memory cells, the conductive access lines extending along and adjacent to the slots, wherein the slots are separated from each other by a first distance in the memory cell region and by a second, greater distance in each of the at least one stair step region and the at least one via region of the at least one memory block.
12. The semiconductor device of claim 11 , wherein:
the at least one memory block comprises at least one three-dimensional memory block having a longitudinal length, a lateral width, and a vertical height; and
the array of memory cells comprises an array of vertical memory cells.
13. The semiconductor device of claim 11 , wherein the conductive access lines extending along and adjacent to the slots in the memory cell region have a width from the slots that is about half of the first distance separating the slots in the memory cell region.
14. The semiconductor device of claim 11 , wherein the at least one via region comprises conductive through-array vias extending through a stack.
15. The semiconductor device of claim 14 , wherein the stack comprises first dielectric materials comprising an oxide material alternating with second dielectric materials comprising a nitride material.
16. The semiconductor device of claim 14 , wherein the sub-array circuitry comprises a driver circuit located on or in a substrate of the semiconductor device, the driver circuit being located under and operably coupled to at least one of the conductive through-array vias.
17. A method of forming a memory block of a semiconductor device, the method comprising:
forming an array of memory cell pillars in a memory cell region;
forming at least one stair step region;
forming at least one conductive via extending through a stack of alternating dielectric materials in at least one via region, the at least one via region at least partially located between the memory cell region and the at least one stair step region; and
forming a dielectric material within slots through a memory block, the slots separated by a first distance in the memory cell region and by a second, greater distance in each of the at least one stair step region and the at least one via region.
18. The method of claim 17 , wherein forming the array of memory cell pillars comprises forming an array of vertical memory cell pillars.
19. The method of claim 18 , wherein forming the dielectric material within the slots through the memory block further comprises forming conductive access lines along and adjacent to the dielectric material within the slots, the conductive access lines extending between respective vertical memory cell pillars of the array of vertical memory cell pillars and contact regions in the at least one stair step region.
20. The method of claim 17 , wherein forming the at least one stair step region comprises forming two stair step regions at opposing longitudinal ends of the memory block and positioning the at least one via region and the memory cell region between the two stair step regions.