Semiconductor structures comprising polymeric materials
Methods of forming semiconductor structures include providing a polymeric material over a carrier substrate, bonding another substrate to the polymeric material, and lowering a temperature of the polymeric material to below about 15° C. to separate the another substrate from the carrier substrate. Some methods include forming a polymeric material over a first substrate, securing a second substrate to the first substrate over the polymeric material, cooling the polymeric material to a temperature below a glass transition temperature of the polymeric material, and separating the second substrate from the first substrate. Semiconductor structures may include a polymeric material over at least a portion of a first substrate, an adhesive material over the polymeric material, and a second substrate over the adhesive material. The polymeric material may have a glass transition temperature of about 10° C. or lower and a melting point of about 100° C. or greater.
1. A semiconductor structure, comprising:
a polymeric material over at least a portion of a first substrate, the polymeric material exhibiting a glass transition temperature of about −10° C. or lower and a melting point of between about 100° C. and about 405° C., the polymeric material comprising one of poly(tetrafluoroethylene), poly-tetrafluoroethylene-alt-ethylene, poly(ethylene terephthalate), poly[(butane-1,4-diol)-alt-(terephthalic acid)], poly{(butane-1,4-diol)-alt-[4,4′-methylenebis(phenyl isocyanate)]}, 2,2,2-trifluoroethanol functionalized poly(dichlorophosphazene), poly[bis(4-fluorophenoxy)phosphazene], 3-(trifluoromethyl)phenol functionalized poly(dichlorophosphazene), p-chlorophenol functionalized poly(dichlorophosphazene), poly[bis(m-methylphenoxy)phosphazene], poly[bis(m-chlorophenoxy)phosphazene], poly[bis(m-fluorophenoxy)phosphazene], poly[bis(m-bromophenoxy)phosphazene], poly(tetrafluoroethylene-co-hexafluoroacetone), poly(hexamethylene carbonate)-block-poly{(p-phenylene diisocyanate)-alt-[bis(4-amino-2,3-dichlorophenyl)methane]}, poly(dimethylsiloxane)-block-poly[(3,4′-oxydianiline)-alt-(adipic acid)], poly{[poly(tetramethylene ether) glycol;butane-1,4-diol]-alt-[2,2′-tetramethylenebis(1,3-dioxoisoindoline-5-carboxylic acid) diethyl ester]}, poly{[alpha-hydro-omega-hydroxypoly(tetrahydrofuran);butane-1,4-diol]-alt-[diethyl 2,2′-(hexane-1,6-diyl)bis(1,3-dioxoisoindoline-5-carboxylate)]}, poly{[alpha,omega-bis(4-aminobenzoyl)poly(tetramethylene glycol)]-alt-(naphthalene-2,6-dicarbonyl dichloride)}, poly({[poly(hexano-6-lactone) diol]-alt-[4,4′-methylenebis(phenyl isocyanate)]}-co-{(butane-1,4-diol)-alt-[4,4′-methylenebis(phenyl isocyanate)]}), poly(2-methylprop-1-ene)//polystyrene, polystyrene//poly[ethene-co-(prop-1-ene)], polystyrene//polystyrene-block-(hydrogenated polybutadiene)-block-polystyrene, poly(vinyl alcohol)//poly(epsilon-caprolactone), poly(vinylidene fluoride)//poly-tetrafluoroethylene-alt-ethylene, poly[(butane-1,4-diol)-alt-(terephthalic acid)]//poly[ethene-co-(oct-1-ene)]//poly{[(bisphenol A)-alt-(terephthalic acid)]-co-[(bisphenol A)-alt-(isophthalic acid)]}, poly[(butane-1,4-diol)-alt-(terephthalic acid)]//poly{[(bisphenol A)-alt-(terephthalic acid)]-co-[(bisphenol A)-alt-(isophthalic acid)]}//poly(ethylene/1-hexylethylene)-poly(2,5-dioxotetrahydrofuran-3,4-diyl), poly(epsilon-caprolactone)//poly(bisphenol A carbonate), or poly[(propane-1,3-diol)-alt-(terephthalic acid)]//poly[ethene-co-(5-ethylidene-2-norbornene)-co-(prop-1-ene)];
an adhesive material over the polymeric material, the adhesive material exhibiting a glass transition temperature of about −10° C. or lower, a melting point of between about 100° C. and about 405° C., and a different coefficient of thermal expansion than the polymeric material, the adhesive material comprising another of poly(tetrafluoroethylene), poly-tetrafluoroethylene-alt-ethylene, poly(ethylene terephthalate), poly[(butane-1,4-diol)-alt-(terephthalic acid)], poly{(butane-1,4-diol)-alt-[4,4′-methylenebis(phenyl isocyanate)]}, 2,2,2-trifluoroethanol functionalized poly(dichlorophosphazene), poly[bis(4-fluorophenoxy)phosphazene], 3-(trifluoromethyl)phenol functionalized poly(dichlorophosphazene), p-chlorophenol functionalized poly(dichlorophosphazene), poly[bis(m-methylphenoxy)phosphazene], poly[bis(m-chlorophenoxy)phosphazene], poly[bis(m-fluorophenoxy)phosphazene], poly[bis(m-bromophenoxy)phosphazene], poly(tetrafluoroethylene-co-hexafluoroacetone), poly(hexamethylene carbonate)-block-poly{(p-phenylene diisocyanate)-alt-[bis(4-amino-2,3-dichlorophenyl)methane]}, poly(dimethylsiloxane)-block-poly[(3,4′-oxydianiline)-alt-(adipic acid)], poly{[poly(tetramethylene ether) glycol;butane-1,4-diol]-alt-[2,2′-tetramethylenebis(1,3-dioxoisoindoline-5-carboxylic acid) diethyl ester]}, poly{[alpha-hydro-omega-hydroxypoly(tetrahydrofuran);butane-1,4-diol]-alt-[diethyl 2,2′-(hexane-1,6-diyl)bis(1,3-dioxoisoindoline-5-carboxylate)]}, poly{[alpha,omega-bis(4-aminobenzoyl)poly(tetramethylene glycol)]-alt-(naphthalene-2,6-dicarbonyl dichloride)}, poly({[poly(hexano-6-lactone) diol]-alt-[4,4′-methylenebis(phenyl isocyanate)]}-co-{(butane-1,4-diol)-alt-[4,4′-methylenebis(phenyl isocyanate)]}), poly(2-methylprop-1-ene)//polystyrene, polystyrene//poly[ethene-co-(prop-1-ene)], polystyrene//polystyrene-block-(hydrogenated polybutadiene)-block-polystyrene, poly(vinyl alcohol)//poly(epsilon-caprolactone), poly(vinylidene fluoride)//poly-tetrafluoroethylene-alt-ethylene, poly[(butane-1,4-diol)-alt-(terephthalic acid)]//poly[ethene-co-(oct-1-ene)]//poly{[(bisphenol A)-alt-(terephthalic acid)]-co-[(bisphenol A)-alt-(isophthalic acid)]}, poly[(butane-1,4-diol)-alt-(terephthalic acid)]//poly{[(bisphenol A)-alt-(terephthalic acid)]-co-[(bisphenol A)-alt-(isophthalic acid)]}//poly(ethylene/1-hexylethylene)-poly(2,5-dioxotetrahydrofuran-3,4-diyl), poly(epsilon-caprolactone)//poly(bisphenol A carbonate), or poly[(propane-1,3-diol)-alt-(terephthalic acid)]//poly[ethene-co-(5-ethylidene-2-norbornene)-co-(prop-1-ene)]; and
a second substrate over the adhesive material.
2. The semiconductor structure of claim 1 , wherein the polymeric material exhibits a melting point between about 200° C. and about 405° C.
3. The semiconductor structure of claim 1 , wherein the adhesive material is bonded to the second substrate.
4. The semiconductor structure of claim 1 , wherein the polymeric material comprises a material formulated to become brittle when cooled to a temperature below about −10° C.
5. The semiconductor structure of claim 1 , wherein at least one of the first substrate and the second substrate has a thickness of about 100 μm or less.
6. The semiconductor structure of claim 1 , wherein the polymeric material comprises a pattern over the first substrate.
7. The semiconductor structure of claim 1 , wherein the first substrate comprises a semiconductor wafer.
8. The semiconductor structure of claim 1 , wherein the first substrate comprises integrated circuitry, memory cells, or peripheral circuitry.
9. The semiconductor structure of claim 1 , wherein the second substrate comprises a carrier substrate.
10. A semiconductor structure, comprising:
a polymeric material over at least a portion of a first substrate;
an adhesive material over the polymeric material, each of the polymeric material and the adhesive material exhibiting a glass transition temperature of about 10° C. or lower, a melting point of between about 100° C. and about 500° C., and a different coefficient of thermal expansion, each of the polymeric material and the adhesive material comprising a different material selected from the group consisting of poly(tetrafluoroethylene), poly-tetrafluoroethylene-alt-ethylene, poly(ethylene terephthalate), poly[(butane-1,4-diol)-alt-(terephthalic acid)], poly{(butane-1,4-diol)-alt-[4,4′-methylenebis(phenyl isocyanate)]}, 2,2,2-trifluoroethanol functionalized poly(dichlorophosphazene), poly[bis(4-fluorophenoxy)phosphazene], 3-(trifluoromethyl)phenol functionalized poly(dichlorophosphazene), p-chlorophenol functionalized poly(dichlorophosphazene), poly[bis(m-methylphenoxy)phosphazene], poly[bis(m-chlorophenoxy)phosphazene], poly[bis(m-fluorophenoxy)phosphazene], poly[bis(m-bromophenoxy)phosphazene], poly(tetrafluoroethylene-co-hexafluoroacetone), poly(hexamethylene carbonate)-block-poly{(p-phenylene diisocyanate)-alt-[bis(4-amino-2,3-dichlorophenyl)methane]}, poly(dimethylsiloxane)-block-poly[(3,4′-oxydianiline)-alt-(adipic acid)], poly{[poly(tetramethylene ether) glycol;butane-1,4-diol]-alt-[2,2′-tetramethylenebis(1,3-dioxoisoindoline-5-carboxylic acid) diethyl ester]}, poly{[alpha-hydro-omega-hydroxypoly(tetrahydrofuran);butane-1,4-diol]-alt-[diethyl 2,2′-(hexane-1,6-diyl)bis(1,3-dioxoisoindoline-5-carboxylate)]}, poly{[alpha,omega-bis(4-aminobenzoyl)poly(tetramethylene glycol)]-alt-(naphthalene-2,6-dicarbonyl dichloride)}, poly({[poly(hexano-6-lactone) diol]-alt-[4,4′-methylenebis(phenyl isocyanate)]}-co-{(butane-1,4-diol)-alt-[4,4′-methylenebis(phenyl isocyanate)]}), poly(2-methylprop-1-ene)//polystyrene, polystyrene//poly[ethene-co-(prop-1-ene)], polystyrene//polystyrene-block-(hydrogenated polybutadiene)-block-polystyrene, poly(vinyl alcohol)//poly(epsilon-caprolactone), poly(vinylidene fluoride)//poly-tetrafluoroethylene-alt-ethylene, poly[(butane-1,4-diol)-alt-(terephthalic acid)]//poly[ethene-co-(oct-1-ene)]//poly{[(bisphenol A)-alt-(terephthalic acid)]-co-[(bisphenol A)-alt-(isophthalic acid)]}, poly[(butane-1,4-diol)-alt-(terephthalic acid)]//poly{[(bisphenol A)-alt-(terephthalic acid)]-co-[(bisphenol A)-alt-(isophthalic acid)]}//poly(ethylene/1-hexylethylene)-poly(2,5-dioxotetrahydrofuran-3,4-diyl), poly(epsilon-caprolactone)//poly(bisphenol A carbonate), and poly[(propane-1,3-diol)-alt-(terephthalic acid)]//poly[ethene-co-(5-ethylidene-2-norbornene)-co-(prop-1-ene)]; and
a second substrate over the adhesive material.
11. The semiconductor structure of claim 10 , wherein the adhesive material exhibits a glass transition temperature at least 10° C. different from the glass transition temperature of the polymeric material.
12. The semiconductor structure of claim 10 , wherein the polymeric material comprises a material formulated to become brittle when cooled to a temperature below about 0° C.
13. The semiconductor structure of claim 10 , wherein the polymeric material contacts an entire surface of the first substrate.
14. The semiconductor structure of claim 10 , wherein the polymeric material comprises concentric rings over the first substrate.
15. The semiconductor structure of claim 10 , wherein the polymeric material comprises a spiral shape over the first substrate.
16. The semiconductor structure of claim 10 , wherein the polymeric material comprises radially extending segments from a center point of the first substrate.
17. The semiconductor structure of claim 10 , wherein the polymeric material comprises strips over the first substrate.
18. The semiconductor structure of claim 10 , wherein at least one of the first substrate or the second substrate has a thickness of about 200 μm or less.
19. The semiconductor structure of claim 10 , wherein at least one of the first substrate or the second substrate has a thickness of about 50 μm or less.
20. The semiconductor structure of claim 10 , wherein the adhesive material comprises a discontinuous adhesive material over the polymeric material.
21. A semiconductor structure formed by a process comprising:
forming a polymeric material over a first substrate and forming an adhesive material over the polymeric material, the polymeric material and the adhesive material exhibiting a melting point of between about 100° C. and about 500° C., a glass transition temperature of about 10° C. or lower, and different coefficients of thermal expansion, each of the polymeric material and the adhesive material selected from the group consisting of poly(tetrafluoroethylene), poly-tetrafluoroethylene-alt-ethylene, poly(ethylene terephthalate), poly[(butane-1,4-diol)-alt-(terephthalic acid)], poly{(butane-1,4-diol)-alt-[4,4′-methylenebis(phenyl isocyanate)]}, 2,2,2-trifluoroethanol functionalized poly(dichlorophosphazene), poly[bis(4-fluorophenoxy)phosphazene], 3-(trifluoromethyl)phenol functionalized poly(dichlorophosphazene), p-chlorophenol functionalized poly(dichlorophosphazene), poly[bis(m-methylphenoxy)phosphazene], poly[bis(m-chlorophenoxy)phosphazene], poly[bis(m-fluorophenoxy)phosphazene], poly[bis(m-bromophenoxy)phosphazene], poly(tetrafluoroethylene-co-hexafluoroacetone), poly(hexamethylene carbonate)-block-poly{(p-phenylene diisocyanate)-alt-[bis(4-amino-2,3-dichlorophenyl)methane]}, poly(dimethylsiloxane)-block-poly[(3,4′-oxydianiline)-alt-(adipic acid)], poly{[poly(tetramethylene ether) glycol;butane-1,4-diol]-alt-[2,2′-tetramethylenebis(1,3-dioxoisoindoline-5-carboxylic acid) diethyl ester]}, poly{[alpha-hydro-omega-hydroxypoly(tetrahydrofuran);butane-1,4-diol]-alt-[diethyl 2,2′-(hexane-1,6-diyl)bis(1,3-dioxoisoindoline-5-carboxylate)]}, poly{[alpha,omega-bis(4-aminobenzoyl)poly(tetramethylene glycol)]-alt-(naphthalene-2,6-dicarbonyl dichloride)}, poly({[poly(hexano-6-lactone) diol]-alt-[4,4′-methylenebis(phenyl isocyanate)]}-co-{(butane-1,4-diol)-alt-[4,4′-methylenebis(phenyl isocyanate)]}), poly(2-methylprop-1-ene)//polystyrene, polystyrene//poly[ethene-co-(prop-1-ene)], polystyrene//polystyrene-block-(hydrogenated polybutadiene)-block-polystyrene, poly(vinyl alcohol)//poly(epsilon-caprolactone), poly(vinylidene fluoride)//poly-tetrafluoroethylene-alt-ethylene, poly[(butane-1,4-diol)-alt-(terephthalic acid)]//poly[ethene-co-(oct-1-ene)]//poly{[(bisphenol A)-alt-(terephthalic acid)]-co-[(bisphenol A)-alt-(isophthalic acid)]}, poly[(butane-1,4-diol)-alt-(terephthalic acid)]//poly{[(bisphenol A)-alt-(terephthalic acid)]-co-[(bisphenol A)-alt-(isophthalic acid)]}//poly(ethylene/1-hexylethylene)-poly(2,5-dioxotetrahydrofuran-3,4-diyl), poly(epsilon-caprolactone)//poly(bisphenol A carbonate), and poly[(propane-1,3-diol)-alt-(terephthalic acid)]//poly[ethene-co-(5-ethylidene-2-norbornene)-co-(prop-1-ene)]; and
attaching a second substrate to the first substrate over the adhesive material.