Anti-reflection layer for back-illuminated sensor
An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.
1. A method of fabricating an image sensor, the method comprising:
forming an epitaxial layer on a substrate;
forming a gate layer on the substrate;
forming a circuit element layer on the gate layer;
thinning the substrate to generated a thinned substrate, the thinned substrate exposing at least portions of the epitaxial layer;
doping at least one exposed portion of the epitaxial layer;
forming a pure boron layer on the exposed portions of the epitaxial layer; and
forming an anti-reflection coating on the surface of the pure boron layer, wherein forming the anti-reflection coating includes an atomic-layer deposition (ALD) process.
2. The method of claim 1 , wherein forming the anti-reflection coating comprises forming at least two layers of different materials.
3. The method of claim 1 , wherein forming the anti-reflection coating comprises forming alumina.
4. The method of claim 3 , wherein forming the alumina comprises depositing a substantially pure alumina layer having a thickness of approximately 16.5 nm.
5. The method of claim 1 , wherein forming the pure boron layer comprises depositing boron such that the pure boron layer has a thickness in the range of 2 nm to 10 nm.
6. A method of fabricating an image sensor, the method comprising:
forming an epitaxial layer on a substrate;
forming a gate layer on the substrate;
forming a circuit element layer on the gate layer;
thinning the substrate to generated a thinned substrate, the thinned substrate exposing at least portions of the epitaxial layer;
doping at least one exposed portion of the epitaxial layer;
forming a pure boron layer on the exposed portions of the epitaxial layer; and
forming an anti-reflection coating consisting essentially of alumina on the surface of the pure boron layer.
7. The method of claim 6 , wherein forming the anti-reflection coating comprises depositing a substantially pure alumina layer having a thickness of approximately 16.5 nm.
8. The method of claim 6 , wherein forming the anti-reflection coating comprises depositing the substantially pure alumina layer using an atomic-layer deposition (ALD) process.
9. The method of claim 6 , wherein forming the pure boron layer comprises depositing boron such that the pure boron layer has a thickness in the range of 2 nm to 10 nm.