IP Library Granted Patent US 10,652,991
Granted Patent B2
US 10,652,991 · App. 15/670,194 · Granted May 12, 2020

Plasma processing apparatus and microwave output device

Inventors: Koichi Yamamoto (Hikari, JP); Atsushi Itou (Kudamatsu, JP)
Assignee: HITACHI HIGH-TECH CORPORATION
H05H1/46H05H2001/4622H05H2001/4682
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Quick Facts
Patent No.
US 10,652,991
App. No.
15/670,194
Granted
May 12, 2020
Kind
B2
Abstract

A plasma processing apparatus includes: a high voltage power supply for supplying a high voltage power to a magnetron; and a detector for detecting a microwave output from the magnetron, wherein based on a result of comparing a signal, which is obtained by adding an output from the detector to an AC component of a current detected from an output of the high voltage power supply, with a setting value of the output of the high voltage power supply, the output of the high voltage power supply is adjusted.

Claims (34)

1. A plasma processing method for processing a wafer arranged in a processing chamber inside of which a plasma is generated using microwave, the plasma processing method comprising:

supplying a high voltage power from a high voltage power supply to a magnetron;

generating the microwave using the magnetron;

supplying process gas into the processing chamber;

generating the plasma inside the processing chamber by using the exited process gas by the microwave propagated into the processing chamber;

wherein supplying a high voltage power further comprises:

detecting a microwave output from the magnetron;

detecting an AC component current in the high voltage power supplied to the magnetron;

comparing a first signal indicating a predetermined setting value for the high voltage power with a second signal which is obtained by adding the signal indicating the microwave output from the magnetron to the signal indicating the AC component current in the high voltage power, and

adjusting the high voltage power supplied to the magnetron using a result of the step of comparing the first and second signals.

2. The plasma processing method according to claim 1 , wherein detecting the AC component current comprises detecting the AC component current in the anode current which is output from the high voltage power supply to the magnetron.

3. The plasma processing method according to claim 1 , the method further comprising:

outputting a signal obtained by detecting the AC component current in the high voltage power supplied to the magnetron as an alarm signal.

4. The plasma processing method according to claim 1 , wherein adjusting the output of the high voltage power supplied to the magnetron includes adjusting the high voltage power supplied to the magnetron so that the difference between the first and second signals is reduced.

5. The plasma processing method according to claim 4 , the method further comprising:

outputting a signal obtained by detecting the AC component current in the high voltage power supplied to the magnetron as an alarm signal.

6. The plasma processing method according to claim 1 , the method further comprising:

rectifying an AC power from an AC power supply before detecting the AC component current, and

wherein adjusting the high voltage power supplied to the magnetron includes adjusting the rectified AC power in the step of rectifying the AC power from the AC power supply.

7. The plasma processing method according to claim 3 , the method further comprising:

rectifying an AC power from an AC power supply before detecting the AC component current, and

wherein adjusting the high voltage power supplied to the magnetron includes adjusting the rectified AC power in the step of rectifying the AC power from the AC power supply.

8. The plasma processing method according to claim 4 , the method further comprising:

rectifying an AC power from an AC power supply before detecting the AC component current, and

wherein adjusting the high voltage power supplied to the magnetron includes adjusting the rectified AC power in the step of rectifying the AC power from the AC power supply.

9. The plasma processing method according to claim 5 , the method further comprising:

rectifying an AC power from an AC power supply before detecting the AC component current, and

wherein adjusting the high voltage power supplied to the magnetron includes adjusting the rectified AC power in the step of rectifying the AC power from the AC power supply.

10. The plasma processing method according to claim 2 , the method further comprising:

outputting a signal obtained by detecting the AC component current in the high voltage power supplied to the magnetron as an alarm signal.

11. The plasma processing method according to claim 2 , wherein adjusting the output of the high voltage power supplied to the magnetron includes adjusting the high voltage power supplied to the magnetron so that the difference between the first and second signals is reduced.

12. The plasma processing method according to claim 2 , the method further comprising:

rectifying an AC power from an AC power supply before detecting the AC component current, and

wherein adjusting the high voltage power supplied to the magnetron includes adjusting the rectified AC power in the step of rectifying the AC power from the AC power supply.

Assignments (1)
CHANGE OF NAME Recorded Mar 25, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052220/0045 →
Priority Claims (1)
JP 2012-174523 · Aug 7, 2012 · national
Continuity (2)
Continuation 13787950 · Mar 7, 2013
Related Publication 20170367169A1 · Dec 21, 2017