Optical device structure using GaN substrates and growth structures for laser applications
Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
1. A device comprising:
a {30-31} crystalline surface region comprising gallium and nitrogen;
a laser stripe region formed overlying a portion of the {30-31} crystalline surface region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;
a first facet provided on the first end of the laser stripe region, the first facet comprising a first semipolar surface; and
a second facet provided on the second end of the laser stripe region, the second facet comprising a second semipolar surface,
wherein the first facet is substantially parallel with the second facet; the {30-31} crystalline surface region is selected from either (30-31) or (30-3-1); and the {30-31} crystalline surface region is off-cut less than +/−8 degrees toward or away from an a-plane.
2. The device of claim 1 wherein the first facet comprises a first mirror surface, the first mirror surface comprising a reflective coating, the reflective coating being selected from silicon dioxide, hafnia, titania, tantalum pentoxide, zirconia, or aluminum oxide.
3. The device of claim 1 wherein the second facet comprises a second mirror surface.
4. The device of claim 1 wherein a length of the laser stripe region ranges from about 50 microns to about 3000 microns.
5. The device of claim 1 further comprising an n-type metal region overlying a backside of the {30-31} crystalline surface region and a p-type metal region overlying an upper portion of the laser stripe region.
6. The device of claim 1 wherein the laser stripe region comprises an overlying dielectric layer exposing an upper portion of the laser stripe region.
7. The device of claim 1 further comprising an n-type gallium and nitrogen containing cladding region overlying the {30-31} crystalline surface region, and an active region overlying the n-type gallium and nitrogen containing cladding region, wherein the laser stripe region-overlies the active region.
8. The device of claim 7 wherein the active region comprises an electron blocking region.
9. The device of claim 7 wherein the active region comprises one or more quantum wells and a separate confinement heterostructure disposed between the one or more quantum wells and the n-type gallium and nitrogen containing cladding region.
10. The device of claim 1 wherein the {30-31} crystalline surface region is provided on a substrate.
11. A device comprising:
a {30-31} crystalline surface region comprising gallium and nitrogen, the {30-31} crystalline surface region being selected from either (30-31) or (30-3-1);
an active region overlying a portion of the {30-31} crystalline surface region;
a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;
a first facet provided on the first end of the laser stripe region, the first facet being substantially orthogonal to the laser stripe region; and
a second facet provided on the second end of the laser stripe, the second facet being substantially orthogonal to the laser stripe region,
wherein the {30-31} crystalline surface region is off-cut less than +/−3 degrees toward or away from a c-plane.
12. The device of claim 1 wherein each of the first facet and the second facet is sufficiently smooth such that each of the first facet and the second facet acts as a mirror surface.
13. The device of claim 1 wherein the laser stripe region being characterized by a cavity orientation substantially parallel to a projection of the c-direction.
14. The device of claim 1 wherein the {30-31} crystalline surface region is provided on a substrate.
15. A method for manufacturing a laser device, the method comprising:
providing a {30-31} crystalline surface region comprising gallium and nitrogen, wherein the {30-31} crystalline surface region is off-cut less than +/−3 degrees toward or away from a c-plane;
forming an active region overlying a portion of the {30-31} crystalline surface region;
forming a laser stripe region overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end, the first end having a first semipolar surface facet and the second end having a second semipolar surface facet; and
forming one or more cladding layers that comprise less than about 2% mole fraction of AlN.
16. The method of claim 15 wherein the active region is configured to emit light characterized by a wavelength ranging from about 500 nm to about 580 nm, or from about 430 nm to about 480 nm.
17. The method of claim 15 wherein the {30-31} crystalline surface region is provided on a substrate.
18. The method of claim 15 wherein forming the one or more cladding layers comprises forming a plurality of cladding layers.