Avalanche-rugged silicon carbide (SiC) power device
In at least one general aspect, a silicon carbide (SiC) device can include a drift region and a termination region at least partially surrounding the SiC device. The termination region can have a first transition zone and a second transition zone. The first transition zone can be disposed between a first zone and a second zone, and the second zone can have a top surface lower in depth than a depth of a top surface of the first zone. The first transition zone can have a recess, and the second transition zone can be disposed between the second zone and a third zone.
1. A silicon carbide (SiC) device, comprising:
a drift region of a first conductivity type;
a termination region at least partially surrounding the SiC device; and
a rim having a second conductivity type and at least partially surrounding the SiC device,
the termination region at least partially surrounding the rim and having the second conductivity type, the termination region having:
a first transition zone, and
a second transition zone,
the first transition zone being disposed between a first zone and a second zone, the second zone having a top surface lower in depth than a depth of a top surface of the first zone, the first transition zone having a recess,
the second transition zone being disposed between the second zone and a third zone.
2. The SiC device of claim 1 , wherein the third zone has a top surface lower in depth than the top surface of the second zone, the second transition zone has a recess.
3. The SiC device of claim 1 , wherein the first zone has a depth equal to a depth of a doped region of the second zone.
4. The SiC device of claim 1 , wherein the first transition zone has a doped region having a depth that is the same as a depth of the doped region of the first zone and as a depth of the doped region of the second zone.
5. The SiC device of claim 1 , wherein the first transition zone has an edge defined by a step.
6. The SiC device of claim 1 , further comprising:
a shielding body defined by a trench and a shielding body doped region, the shielding body doped region has a thickness at least one third of a depth of the trench.
7. The SiC device of claim 1 , wherein the drift region has a first conductivity type,
the SiC device further comprising:
a shielding body; and
a Schottky region,
the rim at least partially surrounding the shielding body and the Schottky region.
8. The SiC device of claim 7 , further comprising:
a shielding body having a shielding body doped region, the shielding body having a doping concentration the same as the doping concentration of a rim doped region of the rim.
9. A silicon carbide (SiC) device, comprising:
a drift region of a first conductivity type;
a rim having a second conductivity type and at least partially surrounding the SiC device; and
a termination region at least partially surrounding the rim and having the second conductivity type, the termination region having a first zone having a doped region with a first thickness, the termination region having a second zone having a doped region with a second thickness different from the first thickness, the first zone having a top surface higher than a top surface of the second zone,
the termination region having:
a first transition zone, and
a second transition zone,
the first transition zone being disposed between the first zone and the second zone,
the second transition zone being disposed between the second zone and a third zone.
10. The SiC device of claim 9 , wherein the first transition zone and the second transition zone each have a recess.
11. The SiC device of claim 9 , wherein the third zone has a top surface lower in depth than the top surface of the second zone.
12. The SiC device of claim 9 , wherein the doped region of the first zone has a depth equal to a depth of the doped region of the second zone.
13. The SiC device of claim 9 , wherein the first transition zone has a doped region having a depth that is the same as a depth of the doped region of the first zone and as a depth of the doped region of the second zone.
14. The SiC device of claim 9 , wherein the drift region has a first conductivity type,
the SiC device further comprising:
an array of a plurality of shielding bodies interleaved with a plurality of Schottky regions,
the rim at least partially surrounding the array.
15. The SiC device of claim 14 , wherein
the first zone is disposed between the rim and the first transition zone,
the first zone has a top surface that is substantially flat, and
the second zone has a top surface that is substantially flat and lower in depth than a depth of the top surface of the first zone.
16. The SiC device of claim 14 , wherein at least one of the plurality of shielding bodies is defined by a trench and a shielding body doped region, the shielding body doped region has a thickness at least one third of a depth of the trench.
17. The SiC device of claim 10 , wherein the doped region of the first zone on a first side of the first transition zone has a relatively high charge, and the doped region of the second zone on a second side of the first transition zone has a relatively low charge.
18. A silicon carbide (SiC) device, comprising:
a drift region;
a termination region including a first transition zone disposed between a first zone and a second zone, and a second transition zone disposed between the second zone and a third zone,
the termination region at least partially surrounding the SiC device,
the second zone having a top surface lower in depth than a depth of a top surface of the first zone,
the depth of the top surface of the second zone being lower than a depth of a top surface of the third zone,
the first transition zone having a recess,
the second transition zone having a recess.
19. The SiC device of claim 18 , wherein the first zone has doped region with a depth equal to a depth of a doped region of the second zone and equal to a depth of a doped region of the third zone.
20. The SiC device of claim 18 , wherein the drift region has a first conductivity type,
the SiC device further comprising:
a shielding body; and
a Schottky region,
a rim having a second conductivity type and at least partially surrounding the shielding body and the Schottky region, the termination region having the second conductivity type and at least partially surrounding the rim.