Integrated structures containing vertically-stacked memory cells
Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, and having vertically-stacked memory cells within the conductive levels. An opening extends through the stack. Channel material is within the opening and along the memory cells. At least some of the channel material contains germanium.
1. An integrated structure comprising, along a cross-section:
a stack of alternating dielectric levels comprising a dielectric material and conductive levels that comprise a conductive material that physically contacts the dielectric material;
vertically-stacked memory cells within the conductive levels, the vertically-stacked memory cells comprising a charge trapping region and an insulative material within the conductive levels;
an opening extending through the stack, the opening having a continuous vertical sidewall along the dielectric material and the insulative material;
non-germanium-containing channel material liners along sidewalls of the opening and along the memory cells, the non-germanium-containing channel material liners being in direct contact with the dielectric material and the insulative material and comprising one or more members of the group consisting of silicon carbide, tin oxide, gallium arsenide, zinc oxide and indium oxide;
germanium-containing channel material liners within the opening and along the non-germanium-containing material liners; and
an insulator-filled hollow within the opening and between the germanium-containing liners.
2. The integrated structure of claim 1 wherein the germanium-containing channel material liners comprise horizontally-extending gradients of germanium concentration.
3. The integrated structure of claim 2 wherein the germanium-containing channel material liners have exterior surfaces along the non-germanium-containing channel material liners and interior regions horizontally offset from the exterior surfaces, and wherein the germanium concentration of each germanium-containing channel material liner increases along a direction from the exterior surface toward the interior region.
4. The integrated structure of claim 2 wherein the germanium-containing channel material liners have exterior surfaces along the non-germanium-containing channel material liners and interior regions horizontally offset from the exterior surfaces, and wherein the germanium concentration of each germanium-containing channel material liner decreases along a direction from the exterior surface toward the interior region.
5. The integrated structure of claim 2 wherein the germanium-containing channel material liners have first exterior surfaces along the non-germanium-containing channel material liners, second exterior surfaces along the insulator-filled hollow, and interior regions between the first and second exterior surfaces; and wherein the germanium concentration of each germanium-containing channel material liner increases along a first direction from the first exterior surface toward the interior region, and increases along a second direction from the second exterior surface toward the interior region.