Thermal pads between stacked semiconductor dies and associated systems and methods
Systems and methods are described for improved heat dissipation of the stacked semiconductor dies by including metallic thermal pads between the dies in the stack. In one embodiment, the thermal pads may be in direct contact with the semiconductor dies. Heat dissipation of the semiconductor die stack can be improved by a relatively high thermal conductivity of the thermal pads that directly contact the adjacent silicon dies in the stack without the intervening layers of the low thermal conductivity materials (e.g., passivation materials). In some embodiments, the manufacturing yield of the stack can be improved by having generally coplanar top surfaces of the thermal pads and under-bump metallization (UBM) structures.
1. A method of manufacturing a semiconductor die having a silicon material and a through-silicon via (TSV) extending through the silicon material, comprising;
disposing a first mask at least partially over a first side of the silicon material of the die;
patterning the first mask to expose the first side of the silicon material about the TSV;
etching the first side of the silicon material to at least partially expose sidewalls of the TSV;
forming a passivation material over the first side of the silicon material such that the passivation material has an opening through which the silicon material is exposed;
depositing a metal material in the opening through the passivation material at the first side of the silicon material to form a thermal pad; and
forming an under-bump metallization (UBM) structure at least partially around the exposed sidewalls of the TSV,
wherein the thermal pad has a first surface facing the first side of the silicon material and a second surface facing away from the first side of the silicon material, the UBM structure has a first surface facing the first side of the silicon material and a second surface facing away from the first side of the silicon material, and the second surface of the UBM structure and the second surface of the thermal pad are generally coplanar.
2. The method of claim 1 wherein the thermal pad contacts the first side of the silicon material.
3. The method of claim 1 , further comprising forming an adhesion material over the silicon material.
4. The method of claim 1 wherein the first surface of the UBM structure faces the passivation material.
5. The method of claim 1 wherein the semiconductor die is a first semiconductor die, further comprising:
stacking the first semiconductor die and a second semiconductor die, wherein the second semiconductor die has a first side facing the first semiconductor die and a second side facing away from the first side, wherein the second semiconductor has a die pad at the first side, wherein the UBM structure is in contact with the die pad, and wherein the thermal pad is in contact with the first side of the second semiconductor die.
6. The method of claim 1 wherein the metal material of the thermal pad is laterally spaced apart from the UBM structure.
7. The method of claim 1 wherein the thermal pad and the UBM structure are formed from the same metal material.
8. The method of claim 1 wherein
etching the first side of the silicon material includes etching the first of the silicon material such that a first end of the TSV projects from the silicon material at the first side of the silicon material; and
forming the UBM structure includes forming the UBM structure to extend around the exposed sidewalls and to cover the first end of the TSV.
9. The method of claim 1 wherein the passivation material is between the UBM structure and the first side of the silicon material.
10. The method of claim 1 wherein the thermal pad does not contact the UBM structure.
11. A method of manufacturing a semiconductor die having a silicon material and a through-silicon via (TSV) extending at least partially through the silicon material, comprising:
etching a first side of the silicon material to expose sidewalls of the TSV;
forming a passivation material over the first side of the silicon material such that the passivation material has an opening through which the silicon material is disposed;
depositing a metal material in the opening through the passivation material to form a thermal pad;
forming an under-bump metallization (UBM) structure at least partially around the exposed sidewalls of the TSV; and
removing the passivation material around the thermal pad,
wherein the thermal pad has a first surface facing the first side of the silicon material and a second surface facing away from the first side of the silicon material, the UBM has a first surface facing the first side of the silicon material and a second surface facing away from the first side of the silicon material, and
the second surface of the UBM and the second surface of the thermal pad are generally coplanar.
12. The method of claim 11 wherein the thermal pad comprises copper.
13. The method of claim 11 wherein the thermal pad contacts the first side of the silicon material.
14. The method of claim 11 wherein etching the first side of the silicon material is at least in part an anisotropic etching.
15. The method of claim 11 , further comprising:
forming an adhesion material in the patterned passivation material.
16. The method of claim 15 wherein the adhesion material comprises Ti or TiW.
17. The method of claim 11 wherein the metal material of the thermal pad is laterally spaced apart from the UBM structure.