Methods of manufacturing a semiconductor device package including a controller element

1. A method of manufacturing a semiconductor device package, the method comprising:

positioning a redistribution substrate laterally adjacent to a controller element;

attaching the redistribution substrate and the controller element to an interposer substrate;

positioning a stack of semiconductor memory devices over the controller element and the redistribution substrate, such that at least a portion of the controller element is directly between the stack of semiconductor memory devices and the interposer substrate; and

operatively connecting the controller element to the semiconductor memory devices of the stack through the redistribution substrate and the interposer substrate.

2. The method of claim 1 , wherein operatively connecting the controller element to the semiconductor memory devices of the stack through the redistribution substrate and the interposer substrate comprises:

wire bonding controller bond pads of the controller element to first redistribution bond pads of the redistribution substrate;

wire bonding second redistribution bond pads of the redistribution substrate to first interposer bond pads of the interposer substrate; and

wire bonding second interposer bond pads of the interposer substrate to memory bond pads of the semiconductor memory devices of the stack.

3. The method of claim 1 , further comprising positioning a dielectric material over the controller element and redistribution substrate prior to positioning the stack of semiconductor memory devices over the controller element and the redistribution substrate.

4. The method of claim 1 , further comprising forming a dielectric encapsulant over the stack of semiconductor memory devices, redistribution substrate, and controller element.

5. The method of claim 1 , wherein positioning a redistribution substrate laterally adjacent to a controller element comprises:

attaching the redistribution substrate comprising a cavity to a dielectric adhesive film; and

positioning the controller element within the cavity of the redistribution substrate and attaching the controller element to the dielectric adhesive film.

6. The method of claim 5 , wherein the controller element is positioned within the cavity of the redistribution substrate and is attached to the dielectric adhesive film prior to attaching the redistribution substrate and the controller element to the interposer substrate.

7. The method of claim 1 , wherein positioning a stack of semiconductor memory devices over the controller element and the redistribution substrate comprises positioning a stack of non-volatile semiconductor memory devices over the controller element and the redistribution substrate, further comprising positioning a volatile semiconductor memory device over the stack of non-volatile semiconductor memory devices.

8. The method of claim 1 , wherein positioning a stack of semiconductor memory devices over the controller element and the redistribution substrate comprises positioning a stack of non-volatile semiconductor memory devices over the controller element and the redistribution substrate, further comprising positioning a volatile semiconductor memory device laterally adjacent to the redistribution substrate and the controller element.

9. The method of claim 1 , further comprising attaching at least one capacitor to the interposer substrate and operatively coupling the at least one capacitor to the controller element through the interposer substrate and the redistribution substrate.

10. The method of claim 1 , further comprising positioning the controller element fully directly between the stack of semiconductor memory devices and the interposer substrate.

11. The method of claim 1 , further comprising positioning at least one additional semiconductor memory device over the redistribution substrate, the at least one additional semiconductor memory device separate from the stack of semiconductor memory devices.

12. The method of claim 11 , wherein positioning the at least one additional semiconductor memory device over the redistribution substrate comprises positioning at least one volatile semiconductor memory device over the redistribution substrate.

13. The method of claim 1 , wherein positioning the stack of semiconductor memory devices over the controller element and the redistribution substrate comprises positioning a stack of non-volatile semiconductor memory devices over the controller element and the redistribution substrate.

14. A method of manufacturing a semiconductor device package, the method comprising:

positioning a redistribution substrate over an interposer substrate;

positioning a controller element laterally adjacent to the redistribution substrate over the interposer substrate;

positioning at least one volatile semiconductor memory device laterally adjacent to the controller element and redistribution substrate and over the interposer substrate; and

positioning a stack of non-volatile semiconductor memory devices over the controller element and the redistribution substrate, such that the controller element is at least partially directly between the stack of non-volatile semiconductor memory devices and the interposer substrate.

15. The method of claim 14 , further comprising operatively connecting the controller element to the at least one volatile memory device and the stack of non-volatile semiconductor memory devices through the redistribution substrate.

16. The method of claim 14 , wherein positioning a controller element laterally adjacent to the redistribution substrate and positioning at least one volatile semiconductor memory device laterally adjacent to the controller element and redistribution substrate comprises positioning the controller element and the at least one volatile semiconductor memory device within at least one cavity of the redistribution substrate.

17. The method of claim 16 , wherein the at least one cavity of the redistribution substrate comprises at least one through hole.

18. The method of claim 14 , further comprising selecting the redistribution substrate to have a thickness substantially the same as the controller element.

19. The method of claim 14 , further comprising selecting the redistribution substrate and the controller element to each have a thickness of between about 35 μm and about 250 μm.

20. A method of manufacturing a semiconductor device package, the method comprising:

attaching a controller element to an interposer substrate;

positioning a stack of semiconductor memory devices over the controller element, such that at least a portion of the controller element is positioned directly between the stack of semiconductor memory devices and the interposer substrate;

positioning a redistribution substrate laterally adjacent to the controller element, such that at least a portion of the redistribution substrate is positioned directly between the interposer substrate and the stack of semiconductor memory devices;

electrically connecting bond pads of the controller element to respective first bond pads of the redistribution substrate with inner wire bonds; and

electrically connecting bond pads of the interposer substrate with respective second bond pads of the redistribution substrate with outer wire bonds, the first bond pads of the redistribution substrate being respectively electrically connected to the second bond pads of the redistribution substrate.