IP Library Granted Patent US 10,418,251
Granted Patent B2
US 10,418,251 · App. 15/688,885 · Granted Sep 17, 2019

Method of forming fin-shaped structure having ladder-shaped cross-sectional profile

Inventors: Wen-Jiun Shen (Yunlin County, TW); Ssu-I Fu (Kaohsiung, TW); Yen-Liang Wu (Taipei, TW); Chia-Jong Liu (Ping-Tung County, TW); Yu-Hsiang Hung (Tainan, TW); Chung-Fu Chang (Tainan, TW); Man-Ling Lu (Taoyuan, TW); Yi-Wei Chen (Taichung, TW)
Assignee: UNITED MICROELECTRONICS CORP.
H01L21/308H01L21/30604H01L21/823431H01L27/0886H01L29/66818H01L21/02238
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Quick Facts
Patent No.
US 10,418,251
App. No.
15/688,885
Granted
Sep 17, 2019
Kind
B2
Abstract

A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.

Claims (12)

1. A method of forming a fin-shaped structure, comprising:

providing a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area;

filling an isolation structure beside the first fin-shaped structure of the first area and beside the second fin-shaped structure of the second area respectively;

forming a patterned mask covering the first area but exposing the second area;

removing a top part of the isolation structure of the second area, thereby exposing a first top part of the second fin-shaped structure;

performing a treatment process to modify an external surface of the first top part of the second fin-shaped structure, thereby forming a modified part only covering the first top part of the second fin-shaped structure;

removing the patterned mask; and

performing a removing process to remove a part of the isolation structure and the modified part by a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part and the isolation structure, thereby exposing a top part of the first fin-shaped structure and a second top part of the second fin-shaped structure, wherein a height of the first top part and the second top part of the second fin-shaped structure protruding from the isolation structure is larger than a height of the top part of the first fin-shaped structure protruding from the isolation structure.

2. The method of forming a fin-shaped structure according to claim 1 , wherein the isolation structure comprises oxide and the modified part comprises oxide.

3. The method of forming a fin-shaped structure according to claim 1 , wherein the treatment process comprises an oxidation process.

4. The method of forming a fin-shaped structure according to claim 3 , wherein the treatment process comprises an oxygen gas-containing process or an in-situ steam generated (ISSG) process.

5. The method of forming a fin-shaped structure according to claim 1 , wherein the removing process comprises an ammonia and nitrogen trifluoride containing etching process.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2021
From: UNITED MICROELECTRONICS CORPORATION
To: MARLIN SEMICONDUCTOR LIMITED
Reel/Frame 056991/0292 →
Priority Claims (1)
CN 2014 1 0454915 · Sep 9, 2014 · national
Continuity (2)
Division 14512475 · Oct 13, 2014
Related Publication 20170358455A1 · Dec 14, 2017