Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system
In a first aspect of a present inventive subject matter, a crystalline oxide semiconductor film includes a crystalline oxide semiconductor that contains a corundum structure as a major component, a dopant, and an electron mobility that is 30 cm 2 /Vs or more.
1. A crystalline oxide semiconductor film, comprising:
a layer including α-Ga 2 O 3 as a major component and a dopant,
wherein the layer has an electron mobility that is 30 cm 2 /Vs or more.
2. The crystalline oxide semiconductor film according to claim 1 ,
wherein the layer has a carrier concentration that is 1.0×10 18 /cm 3 or more.
3. The crystalline oxide semiconductor film according to claim 1 ,
wherein the layer has an electrical resistivity that is 50 mΩ cm or less.
4. The crystalline oxide semiconductor film according to claim 1 ,
wherein the layer has an electrical resistivity that is 5 mΩ cm or less.
5. The crystalline oxide semiconductor film according to claim 1 ,
wherein the layer has a principal plane that is an a-plane or an m-plane.
6. The crystalline oxide semiconductor film according to claim 1 ,
wherein the dopant is at least one selected from among tin, germanium, and silicon.
7. The crystalline oxide semiconductor film according to claim 1 ,
wherein the dopant is tin.
8. The crystalline oxide semiconductor film according to claim 1 ,
wherein the layer further includes indium and/or aluminum.
9. A crystalline oxide semiconductor device, comprising:
the crystalline oxide semiconductor film according to claim 1 ;
a first electrode arranged on a first side of the crystalline oxide semiconductor film; and
a second electrode arranged on the first side of the crystalline oxide semiconductor film.
10. A crystalline oxide semiconductor system, comprising:
a motherboard comprising electrodes and/or wiring patterns; and
the crystalline oxide semiconductor device according to claim 9 electrically connected to the electrodes and/or the wiring patterns.
11. A crystalline oxide semiconductor film, comprising:
a layer including α-Ga 2 O 3 as a major component and a dopant,
wherein the layer has a carrier concentration that is 1.0×10 18 /cm 3 or more, a principal plane that is an a-plane or an m-plane, and an electron mobility that is 30 cm 2 /Vs or more.
12. The crystalline oxide semiconductor film according to claim 11 ,
wherein the layer has an electrical resistivity that is 50 mΩ cm or less.
13. A crystalline oxide semiconductor device, comprising:
the crystalline oxide semiconductor film according to claim 11 ;
a first electrode arranged on a side of the crystalline oxide semiconductor film; and
a second electrode arranged on the side of the crystalline oxide semiconductor film.
14. A crystalline oxide semiconductor device, comprising:
the crystalline oxide semiconductor film according to claim 11 ;
a first electrode arranged on a first side of the crystalline oxide semiconductor film; and
a second electrode arranged on a second side of the crystalline oxide semiconductor film,
wherein the crystalline oxide semiconductor device is a Schottky barrier diode.
15. A crystalline oxide semiconductor film, comprising:
a layer including α-Ga 2 O 3 as a major component and a dopant,
wherein the dopant is an n-type dopant, and
wherein the layer has a principal plane that is an a-plane or an m-plane, and an electron mobility that is 30 cm 2 /Vs or more.
16. The crystalline oxide semiconductor film according to claim 15 ,
wherein the layer has an electrical resistivity that is 50 mΩ cm or less.
17. A crystalline oxide semiconductor device, comprising:
the crystalline oxide semiconductor film according to claim 15 ; and
an electrode arranged on a side of the crystalline oxide semiconductor film.
18. The crystalline oxide semiconductor film according to claim 11 ,
wherein the dopant comprises at least one selected from among tin, germanium, silicon, titanium, zirconium, vanadium, and niobium.
19. The crystalline oxide semiconductor film according to claim 18 ,
wherein the electron mobility is 50 cm 2 /Vs or more.
20. The crystalline oxide semiconductor film according to claim 15 ,
wherein the dopant comprises at least one selected from among tin, germanium, silicon, titanium, zirconium, vanadium, and niobium.