Semiconductor film
Provided is an α-Ga 2 O 3 based semiconductor film having a crystal having a corundum-type crystal structure composed of α-Ga 2 O 3 or an α-Ga 2 O 3 solid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cm −1 in Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cm −1 or less.
1. A semiconductor film having a crystal having a corundum-type crystal structure composed of α-Ga 2 O 3 or an α-Ga 2 O 3 solid solution as a main phase,
wherein the semiconductor film has a size in which a diameter of a largest circle inscribed in an outer circumference of the semiconductor film is 5.08 cm (2 inches) or more,
wherein at a center point X and each of four outer circumferential points A, B, C, and D of the largest circle inscribed in the outer circumference of the semiconductor film on a surface of the semiconductor film, a full width at half maximum of a peak in a vicinity of 216 cm −1 in Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cm −1 or less,
wherein the outer circumferential points A, B, C, and D are determined such that i) a straight line connecting the outer circumferential points A and C and a straight line connecting the outer circumferential points B and D intersect at a right angle to each other at the center point X, and ii) respective shortest distances of the outer circumferential points A, B, C, and D from an outer edge of the semiconductor film are ⅕ of a radius of the semiconductor film, and
wherein W S /W M is 8.0×10 −2 or less, where W M is an arithmetic average value of the full widths at half maximum measured at the center point X and the outer circumferential points A, B, C, and D, and W S is a standard deviation of the full widths at half maximum.
2. The semiconductor film according to claim 1 , wherein an arithmetic average value of thicknesses of the semiconductor film measured at the center point X and the outer circumferential points A, B, C, and D is 2.0 μm or more.
3. The semiconductor film according to claim 1 , wherein at each of the center point X and the outer circumferential points A, B, C, and D, a wave number of a peak top of the peak in the vicinity of 216 cm−1 is 217.8 cm −1 or less.
4. The semiconductor film according to claim 1 , wherein the semiconductor film contains a Group 14 element as a dopant at a proportion of 1.0×10 16 to 1.0×10 21 /cm 3 .
5. The semiconductor film according to claim 1 , wherein the semiconductor film is formed on a support substrate having a size in which a diameter of the largest circle inscribed in an outer circumference is 5.08 cm (2 inches) or more.
6. A composite material comprising:
a support substrate having a size in which the diameter of the largest circle inscribed on an outer circumference is 5.08 cm (2 inches) or more; and
the semiconductor film according to claim 1 formed on the support substrate.