Composite beam apparatus
A composite beam apparatus includes an electron beam column for irradiating an electron beam onto a sample, a focused ion beam column for irradiating a focused ion beam onto the sample to form a cross section, and a neutral particle beam column having an acceleration voltage set lower than that of the focused ion beam column for irradiating a neutral particle beam onto the sample to perform finish processing of the cross section. The electron beam column, the focused ion beam column, and the neutral particle beam column are arranged such that the beams of the columns cross each other at an irradiation point. A controller controls the electron beam column to irradiate and scan the electron beam on the sample during cross section processing by the focused ion beam column and during finish processing by the neutral particle beam column. The composite beam apparatus is capable of suppressing the influence of charge build-up, or electric field or magnetic field leakage from an electron beam column, when subjecting a sample to cross-section processing with a focused ion beam and then performing finishing processing with another beam.
1. A composite beam apparatus, comprising:
an electron beam column irradiating an electron beam onto a sample;
a focused ion beam column irradiating a focused ion beam onto the sample to form a cross section; and
a neutral particle beam column having an acceleration voltage set lower than an acceleration voltage of the focused ion beam column, and irradiating a neutral particle beam onto the sample to perform finish processing of the cross section,
wherein the electron beam column, the focused ion beam column, and the neutral particle beam column are arranged such that each of the irradiated beams from the respective beam columns crosses one another at an irradiation point (P) and during cross section processing by the focused ion beam column and finish processing of the cross section by the neutral particle beam column, the electron beam column is set to irradiate and scan with the electron beam.
2. The composite beam apparatus of claim 1 , wherein a distance L 1 between an apex of the electron beam column and the irradiation point (P), a distance L 2 between an apex of the focused ion beam column and the irradiation point (P), and a distance L 3 between an apex of the neutral particle beam column and the irradiation point (P) satisfy a relationship of L 1 <L 2 <L 3 .
3. The composite beam apparatus of claim 2 , wherein the electron beam column has an objective lens focusing the electron beam on the sample, the objective lens being selectively configurable to an out-lens mode or a semi-in-lens mode;
the neutral particle beam column is able to selectively irradiate the neutral particle beam or an ion beam generated by ionizing the neutral particle beam; and
the composite beam apparatus further comprises a beam irradiation setting means irradiating the ion beam from the neutral particle beam column when the objective lens is set to the out-lens mode.
4. The composite beam apparatus of claim 1 , wherein the electron beam column has an objective lens focusing the electron beam on the sample, the objective lens being selectively configurable to an out-lens mode or a semi-in-lens mode;
the neutral particle beam column is able to selectively irradiate the neutral particle beam or an ion beam generated by ionizing the neutral particle beam; and
the composite beam apparatus further comprises a beam irradiation setting means irradiating the ion beam from the neutral particle beam column when the objective lens is set to the out-lens mode.
5. A composite beam apparatus, comprising:
an electron beam column irradiating an electron beam onto a sample;
a focused ion beam column irradiating a focused ion beam onto the sample to form a cross section; and
a neutral particle beam column having an acceleration voltage set lower than an acceleration voltage of the focused ion beam column, and irradiating a neutral particle beam onto the sample to perform finish processing of the cross section,
wherein the electron beam column, the focused ion beam column, and the neutral particle beam column are arranged such that each of the irradiated beams from the respective beam columns crosses one another at an irradiation point (P), and
wherein a distance L 1 between an apex of the electron beam column and the irradiation point (P), a distance L 2 between an apex of the focused ion beam column and the irradiation point (P), and a distance L 3 between an apex of the neutral particle beam column and the irradiation point (P) satisfy a relationship of L 1 <L 2 <L 3 .
6. The composite beam apparatus of claim 5 , wherein the electron beam column has an objective lens focusing the electron beam on the sample, the objective lens being selectively configurable to an out-lens mode or a semi-in-lens mode;
the neutral particle beam column is able to selectively irradiate the neutral particle beam or an ion beam generated by ionizing the neutral particle beam; and
the composite beam apparatus further comprises a beam irradiation setting means irradiating the ion beam from the neutral particle beam column when the objective lens is set to the out-lens mode.
7. A composite beam apparatus, comprising:
an electron beam column that irradiates an electron beam onto a sample;
a focused ion beam column that irradiates a focused ion beam onto the sample to form a cross section; and
a neutral particle beam column which has an acceleration voltage set lower than an acceleration voltage of the focused ion beam column, and which irradiates a neutral particle beam onto the sample to perform finish processing of the cross section,
wherein the electron beam column, the focused ion beam column, and the neutral particle beam column are arranged such that each of the irradiated beams from the respective beam columns crosses one another at an irradiation point (P); and
a controller configured to control the electron beam column to irradiate and scan the electron beam on the sample during cross section processing of the sample by the focused ion beam column and during finish processing of the cross section of the sample by the neutral particle beam column.
8. The composite beam apparatus according to claim 7 , wherein a distance L 1 between an apex of the electron beam column and the irradiation point (P), a distance L 2 between an apex of the focused ion beam column and the irradiation point (P), and a distance L 3 between an apex of the neutral particle beam column and the irradiation point (P) satisfy a relationship of L 1 <L 2 <L 3 .
9. The composite beam apparatus according to claim 8 , wherein the electron beam column has an objective lens that focuses the electron beam on the sample, the objective lens being selectively configurable to an out-lens mode or a semi-in-lens mode;
the neutral particle beam column is configured to selectively irradiate the neutral particle beam or an ion beam generated by ionizing the neutral particle beam; and
the controller comprises a beam irradiation setting means for irradiating the ion beam from the neutral particle beam column when the objective lens is set to the out-lens mode.
10. The composite beam apparatus according to claim 7 , wherein the electron beam column has an objective lens that focuses the electron beam on the sample, the objective lens being selectively configurable to an out-lens mode or a semi-in-lens mode;
the neutral particle beam column is configured to selectively irradiate the neutral particle beam or an ion beam venerated by ionizing the neutral particle beam; and
the controller comprises a beam irradiation setting means for irradiating the ion beam from the neutral particle beam column when the objective lens is set to the out-lens mode.