Semiconductor device and method for producing the same
In an active region, a gate electrode is disposed in a trench. Spaced apart from the gate electrode, an emitter electrode is disposed in the trench. A source diffusion layer and a base diffusion layer are formed in the active region. The base diffusion layer has a base bottom portion inclined in such a manner that a portion of the base bottom portion adjacent to the emitter electrode is positionally deeper than a portion of the base bottom portion adjacent to the gate electrode. A contact portion has a contact bottom portion inclined in such a manner that a portion of the contact bottom portion in contact with the emitter electrode is positionally deeper than a portion of the contact bottom portion in contact with the base diffusion layer.
1. A semiconductor device comprising a trench gate bipolar transistor, comprising:
a semiconductor substrate of a first conductivity type having a first surface;
a first region and a second region defined in the semiconductor substrate adjacent to each other;
a gate electrode formed in a first trench extending from the first surface of the semiconductor substrate located in the first region to a first depth, with a first insulating film interposed;
an emitter electrode formed in a second trench extending from the first surface to the first depth, with a second insulating film interposed, such that the emitter electrode is spaced from the gate electrode in such a manner that a region of the semiconductor substrate located in the first region is interposed;
a source region of the first conductivity type formed from the first surface of the semiconductor substrate located in the first region between the gate electrode and the emitter electrode to a second depth shallower than the first depth;
a base region of a second conductivity type formed from the second depth of the semiconductor substrate located in the first region between the gate electrode and the emitter electrode to a position deeper than the second depth and shallower than the first depth;
a floating region of the second conductivity type formed from the first surface of the semiconductor substrate located in the second region to a position deeper than the first depth; and
a contact portion electrically connected to the emitter electrode, the source region, and the base region,
the contact portion being formed in a manner astride the emitter electrode and the base region,
the contact portion having a contact bottom portion inclined in such a manner that a first portion of the contact bottom portion in contact with the emitter electrode is positionally deeper than a second portion of the contact bottom portion in contact with the base region.
2. The semiconductor device according to claim 1 , wherein:
the base region has a base bottom portion inclined in such a manner that a first portion of the base bottom portion adjacent to the emitter electrode is positionally deeper than a second portion of the base bottom portion adjacent to the gate electrode; and
a length from the second portion of the base bottom portion to a lower end of the gate electrode is longer than a length from the first portion of the base bottom portion to the lower end of the gate electrode.
3. The semiconductor device according to claim 1 , wherein:
the contact portion has the contact bottom portion in contact with the emitter electrode and the base region; and
the contact portion has a contact side portion in contact with the source region and the base region.
4. A semiconductor device comprising a trench gate bipolar transistor, comprising:
a semiconductor substrate of a first conductivity type having a first surface;
a first region and a second region defined in the semiconductor substrate adjacent to each other;
a gate electrode formed in a first trench extending from the first surface of the semiconductor substrate located in the first region to a first depth, with a first insulating film interposed;
a source region of the first conductivity type formed from the first surface of the semiconductor substrate located between the gate electrode and the second region to a second depth shallower than the first depth;
a base region of a second conductivity type formed from the second depth of the semiconductor substrate located between the gate electrode and the second region to a position deeper than the second depth;
a carrier passage preventing portion including an emitter electrode and preventing a carrier from flowing therethrough, the carrier passage preventing portion being formed in a region of the semiconductor substrate located in the second region such that the carrier passage preventing portion is spaced from the gate electrode in such a manner that a region of the semiconductor substrate located in the first region is interposed; and
a contact portion electrically connected to the emitter electrode, the source region, and the base region,
the contact portion having a bottom portion in contact with the emitter electrode,
the contact portion having a contact side portion in contact with the source region and the base region,
wherein:
the carrier passage preventing portion includes the emitter electrode and a floating region of a second conductivity type;
the emitter electrode is formed in a second trench extending from the first surface to the first depth, with a second insulating film interposed, such that the emitter electrode is spaced from the gate electrode in such a manner that a region of the semiconductor substrate located in the first region is interposed; and
the floating region is formed from the first surface of the semiconductor substrate located in the second region to a position deeper than the first depth, and
wherein:
the base region has a base bottom portion inclined in such a manner that a first portion of the base bottom portion adjacent to the emitter electrode is positionally deeper than a second portion of the base bottom portion adjacent to the gate electrode; and
a length from the second portion of the base bottom portion to a lower end of the gate electrode is longer than a length from the first portion of the base bottom portion to the lower end of the gate electrode.
5. The semiconductor device according to claim 4 , wherein an upper end of the emitter electrode is lower in level than an upper end of the gate electrode.
6. The semiconductor device according to claim 4 , wherein the emitter electrode is larger in width than the gate electrode.
7. The semiconductor device according to claim 4 , wherein:
the carrier passage preventing portion is the emitter electrode; and
the emitter electrode is formed in a second trench extending from the first surface of the semiconductor substrate located throughout the second region to the first depth, with a second insulating film interposed.
8. The semiconductor device according to claim 7 , wherein an upper end of the emitter electrode is lower in level than an upper end of the gate electrode.
9. A semiconductor device comprising a trench gate bipolar transistor, comprising:
a semiconductor substrate of a first conductivity type having a first surface;
a first region and a second region defined in the semiconductor substrate adjacent to each other;
a gate electrode formed in a first trench extending from the first surface of the semiconductor substrate located in the first region to a first depth, with a first insulating film interposed;
a source region of the first conductivity type formed from the first surface of the semiconductor substrate located between the gate electrode and the second region to a second depth shallower than the first depth;
a base region of a second conductivity type formed from the second depth of the semiconductor substrate located between the gate electrode and the second region to a position deeper than the second depth;
a carrier passage preventing portion including an emitter electrode and preventing a carrier from flowing therethrough, the carrier passage preventing portion being formed in a region of the semiconductor substrate located in the second region such that the carrier passage preventing portion is spaced from the gate electrode in such a manner that a region of the semiconductor substrate located in the first region is interposed; and
a contact portion electrically connected to the emitter electrode, the source region, and the base region,
the contact portion having a bottom portion in contact with the emitter electrode,
the contact portion having a contact side portion in contact with the source region and the base region,
wherein:
the carrier passage preventing portion is the emitter electrode; and
the emitter electrode is formed in a second trench extending from the first surface of the semiconductor substrate located throughout the second region to the first depth, with a second insulating film interposed, and
wherein:
the base region has a base bottom portion inclined in such a manner that a first portion of the base bottom portion adjacent to the emitter electrode is positionally deeper than a second portion of the base bottom portion adjacent to the gate electrode; and
a length from the second portion of the base bottom portion to a lower end of the gate electrode is longer than a length from the first portion of the base bottom portion to the lower end of the gate electrode.