Method of manufacturing semiconductor device, substrate processing apparatus comprising exhaust port and multiple nozzles, and recording medium
A method of manufacturing a semiconductor device includes: forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port; supplying a first reactant from a second nozzle to the substrate and exhausting the first reactant from the exhaust port; and supplying a second reactant from a third nozzle to the substrate and exhausting the second reactant from the exhaust port. A substrate in-plane film thickness distribution of the film formed on the substrate is controlled by controlling a balance between a flow rate of an inert gas supplied from the second nozzle, a flow rate of an inert gas supplied from the third nozzle, and a flow rate of an inert gas supplied from the first nozzle in supplying the precursor.
1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port;
supplying a first reactant from a second nozzle disposed at a position farther from the exhaust port than the first nozzle to the substrate and exhausting the first reactant from the exhaust port; and
supplying a second reactant from a third nozzle disposed at a position closer to the exhaust port than the second nozzle to the substrate and exhausting the second reactant from the exhaust port,
wherein a substrate in-plane film thickness distribution of the film formed on the substrate is controlled by, in an act of supplying the precursor, controlling a balance between a flow rate of an inert gas supplied from the second nozzle, a flow rate of an inert gas supplied from the third nozzle, and a flow rate of an inert gas supplied from the first nozzle.
2. The method of claim 1 , wherein, in the act of supplying the precursor, the flow rate of the inert gas supplied from the second nozzle is set greater than the flow rate of the inert gas supplied from the first nozzle.
3. The method of claim 2 , wherein, in the act of supplying the precursor, the flow rate of the inert gas supplied from the second nozzle is set greater than a sum of the flow rate of the precursor and the flow rate of the inert gas which are supplied from the first nozzle.
4. The method of claim 2 , wherein, in the act of supplying the precursor, the flow rate of the inert gas supplied from the third nozzle is set greater than the flow rate of the inert gas supplied from the first nozzle.
5. The method of claim 4 , wherein, in the act of supplying the precursor, the flow rate of the inert gas supplied from the second nozzle is set equal to or greater than the flow rate of the inert gas supplied from the third nozzle.
6. The method of claim 4 , wherein, in the act of supplying the precursor, the flow rate of the inert gas supplied from the second nozzle is set greater than the flow rate of the inert gas supplied from the third nozzle.
7. The method of claim 2 , wherein, in the act of supplying the precursor, the flow rate of the inert gas supplied from the third nozzle is set equal to or less than the flow rate of the inert gas supplied from the first nozzle.
8. The method of claim 2 , wherein, in the act of supplying the precursor, the flow rate of the inert gas supplied from the third nozzle is set equal to the flow rate of the inert gas supplied from the first nozzle.
9. The method of claim 1 , wherein, in the act of supplying the precursor, the flow rate of the inert gas supplied from the second nozzle is set less than the flow rate of the inert gas supplied from the third nozzle, and the flow rate of the inert gas supplied from the third nozzle is set greater than the flow rate of the inert gas supplied from the first nozzle.
10. The method of claim 9 , wherein, in the act of supplying the precursor, the flow rate of the inert gas supplied from the third nozzle is set greater than a sum of the flow rate of the precursor and the flow rate of the inert gas which are supplied from the first nozzle.
11. The method of claim 9 , wherein, in the act of supplying the precursor, the flow rate of the inert gas supplied from the second nozzle is set equal to the flow rate of the inert gas supplied from the first nozzle.
12. The method of claim 1 , wherein, in the act of supplying the precursor, the flow rate of the inert gas supplied from each of the second nozzle and the third nozzle is set equal to the flow rate of the inert gas supplied from the first nozzle.
13. The method of claim 1 , wherein the precursor includes halosilane.
14. A substrate processing apparatus, comprising:
a process chamber in which a substrate is processed;
an exhaust system configured to exhaust an interior of the process chamber from an exhaust port;
a precursor supply system configured to supply a precursor from a first nozzle into the process chamber;
a first reactant supply system configured to supply a first reactant from a second nozzle disposed at a position farther from the exhaust port than the first nozzle into the process chamber;
a second reactant supply system configured to supply a second reactant from a third nozzle disposed at a position closer to the exhaust port than the second nozzle into the process chamber;
an inert gas supply system configured to supply an inert gas from the first nozzle, the second nozzle and the third nozzle into the process chamber; and
a controller configured to control the precursor supply system, the first reactant supply system, the second reactant supply system, the inert gas supply system and the exhaust system to perform, inside the process chamber:
forming a film on the substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying the precursor from the first nozzle to the substrate and exhausting the precursor from the exhaust port;
supplying the first reactant from the second nozzle to the substrate and exhausting the first reactant from the exhaust port; and
supplying the second reactant from the third nozzle to the substrate and exhausting the second reactant from the exhaust port,
wherein a substrate in-plane film thickness distribution of the film formed on the substrate is controlled by, in an act of supplying the precursor, controlling a balance between a flow rate of the inert gas supplied from the second nozzle, a flow rate of the inert gas supplied from the third nozzle, and a flow rate of the inert gas supplied from the first nozzle.
15. A non-transitory computer-readable recording medium storing a program that causes a computer to control a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:
forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port;
supplying a first reactant from a second nozzle disposed at a position farther from the exhaust port than the first nozzle to the substrate and exhausting the first reactant from the exhaust port; and
supplying a second reactant from a third nozzle disposed at a position closer to the exhaust port than the second nozzle to the substrate and exhausting the second reactant from the exhaust port; and
controlling a substrate in-plane film thickness distribution of the film formed on the substrate by, in an act of supplying the precursor, controlling a balance between a flow rate of an inert gas supplied from the second nozzle, a flow rate of an inert gas supplied from the third nozzle, and a flow rate of an inert gas supplied from the first nozzle.