Plasma etching method
View Patent ↗A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.
1. A plasma etching method for etching a film containing a tungsten element using plasma, the method comprising:
etching the film containing a tungsten element by plasma generated using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element,
wherein the gas containing a carbon element and an oxygen element is COS gas, CClO gas, C 2 H 4 O gas, C 3 F 5 O gas, CH 3 OH gas, COF 2 gas, or HCHO gas.
2. The plasma etching method according to claim 1 , wherein the gas containing a carbon element and an oxygen element is COS gas.
3. The plasma etching method according to claim 1 , wherein
the gas containing a halogen element is Cl 2 gas, BCl 3 gas, HBr gas, or HI gas, and
the gas containing a silicon element is SiF 4 gas or SiCl 4 gas.
4. A plasma etching method for etching a film containing a tungsten element using plasma, the method comprising:
etching the film containing a tungsten element by using a mixed gas of Cl 2 gas, SiCl 4 gas, oxygen gas, and COS gas.
5. The plasma etching method according to claim 4 , wherein the film containing the tungsten element is a tungsten nitride (WN) film.
6. A plasma etching method for etching a tungsten nitride (WN) film using plasma, the method comprising:
etching the tungsten nitride (WN) film by plasma generated using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.