Method of making a light emitting device having a patterned protective layer

1. A method of making a light emitting device, comprising steps of:

providing a substrate;

forming a light-emitting structure comprising an active layer on the substrate;

forming a protective layer having a first thickness on the light-emitting structure;

etching the protective layer to form a protective thin layer having a second thickness smaller than the first thickness; and

patterning the protective thin layer.

2. The method of claim 1 , wherein the protective layer is formed on a top surface and a sidewall of the light-emitting structure.

3. The method of claim 1 , wherein a difference between the first thickness and the second thickness is larger than 300 Å.

4. The method of claim 1 , further comprising applying a laser after forming the protective layer.

5. The method of claim 4 , further comprising cutting the protective layer by the laser.

6. The method of claim 4 , further comprising forming a trench in the substrate by the laser.

7. The method of claim 1 , wherein the step of etching the protective layer comprises etching the protective layer by an acidic solution.

8. The method of claim 1 , wherein the second thickness is between 3000-9700 Å.

9. The method of claim 1 , wherein a patterned protective layer is formed by the step of patterning the protective thin layer, and the method further comprising:

forming a transparent conductive layer on the patterned protective layer and the light-emitting structure; and

forming a first electrode on the transparent conductive layer.

10. The method of claim 9 , wherein the first electrode is formed on the transparent conductive layer at a position corresponding to the patterned protective layer.

11. The method of claim 10 , wherein the patterned protective layer comprises a shape substantially the same as the first electrode and an area larger than that of the first electrode.

12. The method of claim 9 , wherein the patterned protective layer comprises an inclined sidewall.

13. The method of claim 9 , wherein the patterned protective layer is configured to be a current barrier layer.

14. The method of claim 1 , wherein the step of forming the light-emitting structure comprises:

sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate; and

etching the light-emitting structure to expose a part of the first semiconductor layer before forming the protective layer.

15. The method of claim 14 , further comprising forming a second electrode on the first semiconductor layer.

16. The method of claim 1 , wherein the protective layer comprises an insulating material.