Display device
A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
1. A display device, comprising:
a light blocking layer;
a semiconductor layer including an oxide semiconductor material and disposed over the light blocking layer, the semiconductor layer including a channel region, a source region and a drain region that are positioned at two opposite sides of the channel region, the source region and the drain region being positioned at a same layer as the channel region;
an insulating layer disposed over the semiconductor layer;
a gate electrode disposed over the insulating layer, the gate electrode overlapping the light blocking layer with the channel region interposed between the gate electrode and the light blocking layer;
a passivation layer disposed over the gate electrode; and
a data input electrode and a data output electrode disposed over the passivation layer, the data input electrode being electrically connected to the source region, and the data output electrode being electrically connected to the drain region,
wherein:
an edge boundary of the gate electrode overlaps the insulating layer in a plan view,
the edge boundary of the insulating layer overlaps the semiconductor layer in the plan view,
the edge boundary of the insulating layer overlaps the light blocking layer in the plan view, and
the passivation layer contacts a side surface and a top surface of the insulating layer, a side surface of the gate electrode, and a top surface of the source region or the drain region.
2. The display device of claim 1 , further comprising: a low conductive region positioned between the source region or the drain region and the channel region, wherein the insulating layer is disposed over the channel region and the low conductive region, and a carrier concentration of the low conductive region is lower than a carrier concentration of the source region or the drain region.
3. The display device of claim 2 , wherein the edge boundary of the insulating layer is substantially aligned to a boundary between the low conductive region and the source region or the drain region.
4. The display device of claim 3 , wherein the edge boundary of the gate electrode is substantially aligned to an edge boundary of the channel region.
5. The display device of claim 1 , further comprising: a buffer layer disposed between the light blocking layer and the semiconductor layer.
6. The display device of claim 5 , wherein at least one of the buffer layer and the insulating layer includes an insulating oxide.
7. A display device, comprising:
a light blocking layer;
a semiconductor layer including an oxide semiconductor material and disposed over the light blocking layer, the semiconductor layer including a channel region, a source region and a drain region that are positioned at two opposite sides of the channel region, the source region and the drain region being positioned at a same layer as the channel region;
an insulating layer disposed over the semiconductor layer;
a gate electrode disposed over the insulating layer, the light blocking layer overlapping the gate electrode with the channel region interposed between the gate electrode and the light blocking layer;
a passivation layer disposed over the gate electrode; and
a data input electrode and a data output electrode disposed over the passivation layer, the data input electrode being electrically connected to the source region, and the data output electrode being electrically connected to the drain region,
wherein:
a length of the gate electrode in a first direction is less than a length of the insulating layer in the first direction,
the length of the insulating layer in the first direction is less than a length of the semiconductor layer in the first direction,
the length of the insulating layer in the first direction is less than a length of the light blocking layer in the first direction, and
the passivation layer contacts a side surface and a top surface of the insulating layer, a side surface of the gate electrode, and a top surface source region or the drain region.
8. The display device of claim 7 , further comprising: a low conductive region positioned between the source region or the drain region and the channel region, wherein the insulating layer is disposed over the channel region and the low conductive region, and a carrier concentration of the low conductive region is lower than a carrier concentration of the source region or the drain region.
9. The display device of claim 8 , wherein an edge boundary of the insulating layer is substantially aligned to a boundary between the low conductive region and the source region or the drain region.
10. The display device of claim 9 , wherein an edge boundary of the gate electrode is substantially aligned to an edge boundary of the channel region.
11. The display device of claim 10 , wherein the first direction includes a length direction of the channel region.
12. The display device of claim 7 , further comprising: a buffer layer disposed between the light blocking layer and the semiconductor layer.
13. The display device of claim 12 , wherein at least one of the buffer layer and the insulating layer includes an insulating oxide.
14. A display device, comprising:
a light blocking layer;
an oxide semiconductor disposed over the light blocking layer, the oxide semiconductor including a channel region, a source region and a drain region that are positioned at two opposite sides of the channel region, the source region and the drain region being positioned at a same layer as the channel region;
a low conductive region included in the oxide semiconductor, the low conductive region being positioned between the source region or the drain region and the channel region;
an insulating layer disposed over the channel region and the low conductive region;
a gate electrode disposed over the insulating layer, the gate electrode overlapping the light blocking layer with the oxide semiconductor interposed between the gate electrode and the light blocking layer; and
a passivation layer disposed over the gate electrode,
wherein:
a length of the gate electrode in a first direction is less than a length of the insulating layer in the first direction,
the length of the insulating layer in the first direction is less than a length of the oxide semiconductor in the first direction,
the length of the oxide semiconductor in the first direction is less than a length of the light blocking layer in the first direction,
the passivation layer contacts a side surface and a top surface of the insulating layer, a side surface of the gate electrode, and a top surface of the source region or the drain region, and
an edge boundary of the insulating layer is substantially aligned to a boundary between the low conductive region and the source region or the drain region.
15. The display device of claim 14 , further comprising: a data input electrode and a data output electrode disposed over the passivation layer, wherein the data input electrode is electrically connected to the source region, and the data output electrode is electrically connected to the drain region.
16. The display device of claim 14 , wherein an edge boundary of the gate electrode is substantially aligned to an edge boundary of the channel region.
17. The display device of claim 16 , wherein the first direction includes a length direction of the channel region.
18. The display device of claim 14 , further comprising: a buffer layer disposed between the light blocking layer and the oxide semiconductor, wherein at least one of the buffer layer and the insulating layer includes an insulating oxide.
19. The display device of claim 14 , wherein the light blocking layer comprises a metal and overlaps an entire area of the oxide semiconductor.