Method of manufacturing semiconductor device
A technique capable of forming a side wall of a gate electrode having high resistance-to-etching and low leakage current is provided. A method of manufacturing a semiconductor device according to the technique includes: (a) loading a substrate into a processing space in a process vessel, the substrate having thereon a gate electrode and an insulating film formed on a side surface of the gate electrode as a side wall; and (b) forming an etching-resistant film containing carbon and nitrogen on a surface of the insulating film by supplying a carbon-containing gas into the processing space.
1. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a processing space in a process vessel, the substrate having thereon a gate electrode and an insulating film formed on a side surface of the gate electrode as a side wall;
(b) forming an etching-resistant film containing carbon and nitrogen on a surface of the insulating film by supplying a carbon-containing gas into the processing space; and
(c) supplying a nitrogen-containing gas into the processing space after performing (b).
2. The method of claim 1 , wherein a carbon content ratio of the etching-resistant film is higher than that of the insulating film.
3. The method of claim 2 , wherein (b) comprises:
(b-1) activating the carbon-containing gas into plasma state; and (b-2) supplying a carbon component of the carbon-containing gas in plasma state to the surface of the insulating film.
4. The method of claim 3 , wherein the carbon-containing gas is activated into plasma state in the processing space.
5. The method of claim 3 , wherein the etching-resistant film formed in (b) is thinner than the insulating film.
6. The method of claim 2 , wherein the etching-resistant film formed in (b) is thinner than the insulating film.
7. The method of claim 1 , wherein (b) comprises:
(b-1) activating the carbon-containing gas into plasma state; and (b-2) supplying a carbon component of the carbon-containing gas in plasma state to the surface of the insulating film.
8. The method of claim 7 , wherein the carbon-containing gas is activated into plasma state in the processing space.
9. The method of claim 8 , wherein the etching-resistant film formed in (b) is thinner than the insulating film.
10. The method of claim 7 , wherein the etching-resistant film formed in (b) is thinner than the insulating film.
11. The method of claim 1 , wherein the etching-resistant film formed in (b) is thinner than the insulating film.