Nitrogen-containing semiconductor device
A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is Al x Ga 1-x N, wherein 0≤x≤1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×10 17 cm −3 and carbon having a concentration greater than 5×10 17 cm −3 . A chemical formula of the second AlGaN buffer layer is Al y Ga 1-y N, wherein 0≤y≤1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.
1. A nitrogen-containing semiconductor device, comprising:
a substrate;
a first AlGaN buffer layer, disposed on the substrate, wherein a chemical formula of the first AlGaN buffer layer is Al x Ga 1-x N, wherein 0≤x≤1, and the first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×10 17 cm −3 and carbon having a concentration greater than 5×10 17 cm −3 ;
a GaN buffer layer, disposed on the first AlGaN buffer layer;
a second AlGaN buffer layer, disposed on the GaN buffer layer, wherein a chemical formula of the second AlGaN buffer layer is Al y Ga 1-y N, wherein 0≤y≤1;
a third AlGaN buffer layer, wherein a chemical formula of the third AlGaN buffer layer is Al z Ga 1-z N, wherein 0≤z≤1, the third AlGaN buffer layer is disposed between the first AlGaN buffer layer and the GaN buffer layer, and a concentration of Al in the first AlGaN buffer layer is greater than a concentration of Al in the third AlGaN buffer layer; and
a semiconductor stacking layer, disposed on the second AlGaN buffer layer,
wherein a concentration of Al in the third AlGaN buffer layer decreases from a side connected to the first AlGaN buffer layer to a side connected to the GaN buffer layer.
2. The nitrogen-containing semiconductor device as claimed in claim 1 , wherein when the material of the substrate comprises sapphire, a surface of the substrate connected to the first AlGaN buffer layer is a patterned surface, and when the material of the substrate comprises silicon or SiC, the surface of the substrate connected to the first AlGaN buffer layer is a smooth surface.
3. The nitrogen-containing semiconductor device as claimed in claim 1 , wherein x in the chemical formula of the first AlGaN buffer layer is greater than y in the chemical formula of the second AlGaN buffer layer.
4. A nitrogen-containing semiconductor device, comprising:
a substrate;
a first AlGaN buffer layer, disposed on the substrate, wherein a chemical formula of the first AlGaN buffer layer is Al x Ga 1-x N, wherein 0≤x≤1;
a GaN buffer layer, disposed on the first AlGaN buffer layer;
a second AlGaN buffer layer, disposed on the GaN buffer layer, wherein a chemical formula of the second AlGaN buffer layer is Al y Ga 1-y N, wherein 0≤y≤1, and the first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×10 17 cm −3 and carbon having a concentration greater than 5×10 17 cm −3 ;
a third AlGaN buffer layer, wherein a chemical formula of the third AlGaN buffer layer is Al z Ga 1-z N, wherein 0≤z≤1, the third AlGaN buffer layer is disposed between the first AlGaN buffer layer and the GaN buffer layer, and a concentration of Al in the first AlGaN buffer layer is greater than a concentration of Al in the third AlGaN buffer layer; and
a semiconductor stacking layer, disposed on the second AlGaN buffer layer,
wherein a concentration of Al in the third AlGaN buffer layer decreases from a side connected to the first AlGaN buffer layer to a side connected to the GaN buffer layer.
5. The nitrogen-containing semiconductor device as claimed in claim 4 , wherein when a material of the substrate comprises sapphire, a surface of the substrate connected to the first AlGaN buffer layer is a patterned surface, and when the material of the substrate comprises silicon carbide (SiC) or silicon, a surface of the substrate connected to the first AlGaN buffer layer is a smooth surface.
6. The nitrogen-containing semiconductor device as claimed in claim 4 , wherein a thickness of the first AlGaN buffer layer is in a range from 1 nanometer to 100 nanometers, a thickness of the GaN buffer layer is in a range from 100 nanometers to 10 micrometers, a thickness of the second AlGaN buffer layer is in a range from 0.5 nanometers to 20 nanometers.
7. The nitrogen-containing semiconductor device as claimed in claim 1 , wherein a material of the substrate comprises sapphire, silicon carbide (SiC) or silicon.
8. The nitrogen-containing semiconductor device as claimed in claim 1 , wherein a thickness of the first AlGaN buffer layer is in a range from 1 nanometer to 100 nanometers, a thickness of the GaN buffer layer is in a range from 100 nanometers to 10 micrometers, a thickness of the second AlGaN buffer layer is in a range from 0.5 nanometers to 20 nanometers.
9. The nitrogen-containing semiconductor device as claimed in claim 4 , wherein a material of the substrate comprises sapphire, silicon carbide (SiC) or silicon.
10. The nitrogen-containing semiconductor device as claimed in claim 4 , wherein x in the chemical formula of the first AlGaN buffer layer is greater than y in the chemical formula of the second AlGaN buffer layer.