IP Library Granted Patent US 10,886,230
Granted Patent B2
US 10,886,230 · App. 15/716,301 · Granted Jan 5, 2021

Fan-out semiconductor package

Inventors: Hyoung Joon Kim (Suwon-si, KR); Doo Hwan Lee (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L23/5389H01L23/16H01L23/295H01L23/3114H01L23/3135H01L23/5386H01L23/562H01L24/05H01L24/19H01L24/20H01L24/24H01L24/25H01L23/145H01L23/3128H01L23/49816H01L23/5384H01L2224/02377H01L2224/02379H01L2224/0401H01L2224/04105H01L2224/05096H01L2224/05124H01L2224/05557H01L2224/05559H01L2224/05572H01L2224/05647H01L2224/12105H01L2224/13006H01L2224/13023H01L2224/18H01L2224/211H01L2224/215H01L2224/221H01L2224/24101H01L2224/24155H01L2225/06517H01L2924/0105H01L2924/01013H01L2924/01022H01L2924/01028H01L2924/01029H01L2924/01047H01L2924/01079H01L2924/01082H01L2924/05432H01L2924/05442H01L2924/0665H01L2924/07025H01L2924/10252H01L2924/10253H01L2924/10329H01L2924/14H01L2924/15153H01L2924/186H01L2924/19105H01L2924/3511
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Quick Facts
Patent No.
US 10,886,230
App. No.
15/716,301
Granted
Jan 5, 2021
Kind
B2
Abstract

A fan-out semiconductor package is provided. A semiconductor chip is disposed in a through hole of a first connection member. At least a portion of the semiconductor chip is encapsulated by an encapsulant. A second connection member including a redistribution layer is formed on an active surface of the semiconductor chip. An external connection terminal having excellent reliability is formed on the encapsulant.

Claims (53)

1. A fan-out semiconductor package comprising:

a first connection member having a through hole;

a semiconductor chip disposed in the through hole, and having an active surface having a connection pad disposed thereon and an inactive surface opposing the active surface;

an encapsulant having a first region disposed on an upper surface of the first connection member and the inactive surface of the semiconductor chip, and a second region extended continuously from the first region into the through hole, and including an insulating resin, a filler, and core materials including one or more selected from the group consisting of a glass fiber, a glass cloth, and a glass fabric;

a second connection member disposed on the first connection member and the active surface of the semiconductor chip;

an opening passing through the first region of the encapsulant; and

an external connection terminal filling at least a portion of the opening,

wherein the first connection member and the second connection member comprise redistribution layers electrically connected to the connection pad of the semiconductor chip, respectively,

the redistribution layer of the first connection member comprises a pad having at least a portion exposed by the opening to be connected to the external connection terminal,

the core materials of the encapsulant are disposed in the first region,

the filler is dispersed in the first region and the second region, and

the encapsulant has first voids, each of the first voids is recessed away from a wall surface of the opening and directly exposes a portion of each of the core materials.

2. The fan-out semiconductor package of claim 1 , wherein each of the first voids has at least a portion filled with a portion of the external connection terminal.

3. The fan-out semiconductor package of claim 1 , wherein the encapsulant has a second void recessed away from the wall surface of the opening and directly exposing the insulating resin of the encapsulant.

4. The fan-out semiconductor package of claim 3 , wherein the second void has at least a portion filled with a portion of the external connection terminal,

each of the first voids is deeper than the second void with respect to the wall surface of the opening.

5. The fan-out semiconductor package of claim 1 , further comprising:

a resin layer disposed on the encapsulant,

wherein the opening also passes through the resin layer, and

the resin layer comprises a second void having at least a portion filled with a portion of the external connection terminal.

6. The fan-out semiconductor package of claim 5 , wherein the resin layer comprises an insulating resin and a filler, and

the second void is recessed away from the wall surface of the opening and directly exposing the insulating resin of the resin layer.

7. The fan-out semiconductor package of claim 6 , wherein each of the first voids is deeper than the second void with respect to the wall surface of the opening.

8. The fan-out semiconductor package of claim 1 , wherein the first connection member comprises a first insulating layer, a first redistribution layer contacting the second connection member and embedded in the first insulating layer, and a second redistribution layer opposing the first redistribution layer, and the first redistribution layer and the second redistribution layer are electrically connected to the connection pad.

9. The fan-out semiconductor package of claim 8 , wherein the first connection member further comprises a second insulating layer disposed on the first insulating layer to cover the second redistribution layer, and the pad is disposed on the second insulating layer, and the pad is electrically connected to the connection pad.

10. The fan-out semiconductor package of claim 1 , wherein the first connection member comprises a first insulating layer, a first redistribution layer and a second redistribution layer disposed on opposing surfaces of the first insulating layer, a second insulating layer disposed on the first insulating layer to cover the first redistribution layer, and a third redistribution layer disposed on the second insulating layer, and the first redistribution layer, the second redistribution layer, and the third redistribution layer are electrically connected to the connection pad.

11. The fan-out semiconductor package of claim 10 , wherein the first connection member further comprises a third insulating layer disposed on the first insulating layer to cover the second redistribution layer, and pad disposed on the third insulating layer, and the pad is electrically connected to the connection pad.

12. The fan-out semiconductor package of claim 1 , wherein the wall surface of the opening has surface roughness greater than surface roughness of an exposed surface of the pad.

13. The fan-out semiconductor package of claim 1 , wherein each of the first voids is surrounded directly by at least one of the insulating resin and the filler of the encapsulant.

14. A fan-out semiconductor package comprising:

a first connection member having a through hole;

a semiconductor chip disposed in the through hole, and having an active surface having a connection pad disposed thereon and an inactive surface opposing the active surface;

an encapsulant encapsulating at least portions of the first connection member and the inactive surface of the semiconductor chip, and including an insulating resin, a filler and a core material including one or more selected from the group consisting of a glass fiber, a glass cloth, and a glass fabric;

a second connection member disposed on the first connection member and the active surface of the semiconductor chip;

an opening passing through the encapsulant; and

an external connection terminal filling at least a portion of the opening,

wherein the first connection member and the second connection member comprise redistribution layers electrically connected to the connection pad of the semiconductor chip, respectively,

the redistribution layer of the first connection member comprises a pad having at least a portion exposed by the opening to be connected to the external connection terminal, and

the encapsulant has first voids in a wall surface of the opening, and

sidewalls of all of the first voids extending from the wall surface of the opening are composed of the insulating resin, and end surfaces of all of the first voids respectively connecting the sidewalls thereof are composed of the core material.

15. The fan-out semiconductor package of claim 14 , wherein the first voids have a portion filled with a portion of the external connection terminal.

16. The fan-out semiconductor package of claim 14 , wherein the encapsulant has second voids in the wall surface of the opening,

sidewalls of the second voids extending from the wall surface of the opening are composed of the insulating resin, and end surfaces of the second voids respectively connecting the sidewalls thereof are composed of the insulating resin,

a maximum depth, among depths of the second voids respectively from the wall surface of the opening to the end surfaces of the second voids, is less than a depth of each of the first voids, and

the second voids have a portion filled with a portion of the external connection terminal.

17. The fan-out semiconductor package of claim 14 , further comprising:

a resin layer disposed on the encapsulant,

wherein the opening also passes through the resin layer, and

the resin layer comprises second voids having a portion filled with a portion of the external connection terminal.

18. The fan-out semiconductor package of claim 17 , wherein the resin layer comprises an insulating resin and a filler, and

sidewalls of the second voids extending from the wall surface of the opening are composed of the insulating resin of the resin layer, and end surfaces of the second voids connecting the sidewalls thereof are composed of the insulating resin of the resin layer.

19. The fan-out semiconductor package of claim 14 , wherein the first connection member comprises a first insulating layer, a first redistribution layer contacting the second connection member and embedded in the first insulating layer, and a second redistribution layer opposing the first redistribution layer, and the first redistribution layer and the second redistribution layer are electrically connected to the connection pad.

20. The fan-out semiconductor package of claim 14 , wherein the first connection member comprises a first insulating layer, a first redistribution layer and a second redistribution layer disposed on opposing surfaces of the first insulating layer, a second insulating layer disposed on the first insulating layer to cover the first redistribution layer, and a third redistribution layer disposed on the second insulating layer, and the first redistribution layer, the second redistribution layer, and the third redistribution layer are electrically connected to the connection pad.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2019
From: SAMSUNG ELECTRO-MECHANICS CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 049350/0756 →
Priority Claims (1)
KR 10-2016-0126233 · Sep 30, 2016 · national
Continuity (2)
Division 15441655 · Feb 24, 2017
Related Publication 20180096941A1 · Apr 5, 2018
Cited By (1)
US 12,660,093