Interconnect structures
The present disclosure generally relates to semiconductor structures and, more particularly, to interconnect structures and methods of manufacture. The structure includes a metallization feature comprising a fill material and formed within a dielectric layer; at least one cap covering the fill material of the metallization feature, the at least one cap is comprised of a material different than the fill material of the metallization feature; and an interconnect structure in electrical contact with the metallization feature.
1. A structure, comprising:
a metallization feature comprising a barrier material, a fill material on the barrier material, a liner on the fill material and an upper portion of the barrier material, and a film directly on portions of the liner, all formed within a dielectric layer;
at least one cap above the fill material of the metallization feature and directly on a surface of the liner, the at least one cap being encapsulated by the liner and the film, and the at least one cap further comprised of a material different than the fill material of the metallization feature;
a capping layer directly on a surface of the film and on a portion of the barrier material; and
an interconnect structure extending within an opening of the capping layer and in direct contact with the film such that electrical contact is provided with the metallization feature.
2. The structure of claim 1 , further comprising at least one cap covering a fill material of the interconnect structure and comprised of a material different than a fill material of the interconnect structure.
3. The structure of claim 2 , wherein the at least one cap is within a recessed portion of the metallization feature.
4. The structure of claim 2 , further comprising the liner formed in a trench of the dielectric layer and which separates the at least one cap covering the fill material of the metallization feature, wherein the liner is comprised of a same material as the fill material of the metallization feature and the material of the interconnect structure.
5. The structure of claim 4 , wherein the fill material of the interconnect structure is Co and the at least one cap covering the fill material of the interconnect structure is recessed within the Co.
6. The structure of claim 1 , wherein the at least one cap covering the fill material of the metallization feature and the at least one cap covering the material of the interconnect structure are Cu material.
7. The structure of claim 6 , wherein the Cu material is selected from the group consisting of Cu, CuMn, CuCo or CuAl.
8. The structure of claim 7 , wherein the barrier material is a back end of line (BEOL) barrier material.
9. The structure of claim 8 , wherein the BEOL barrier material has a thickness in a range of about 5-15 nm.
10. The structure of claim 9 , wherein the BEOL barrier material is selected from the group consisting of tantalum nitride (TaN), ultra-thin TaN, ultra-thin tantalum (Ta), and ultra-thin titanium nitride (TiN).
11. A structure, comprising:
a metallization feature formed within a trench of a dielectric layer and comprising a barrier material lining a sidewall of the trench and a metal fill material directly on the barrier material and partially filling the trench;
a first cap covering the fill material within the trench;
a film directly on the first cap and over the metal fill material of the metallization feature;
a liner layer directly contacting both the metal fill material and an upper portion of the barrier material and lining sides of the first cap, the liner layer further separating the first cap from the metal fill material and encapsulating the first cap with the film;
a capping layer directly on a surface of the film and an upper portion of the barrier material;
an interconnect structure in direct electrical extending through an opening in the capping layer and directly contacting the film; and
a second cap covering the interconnect structure and comprised of a material different than the fill material of the metallization feature.
12. The structure of claim 11 , wherein the liner layer includes a Co liner.
13. The structure of claim 12 , wherein the film is made of Co.
14. The structure of claim 13 , wherein the fill material of the metallization feature and the interconnect structure are Co.
15. The structure of claim 11 , wherein the first cap and the second cap are the same material.
16. The structure of claim 11 , wherein the first cap and the second cap are different materials.
17. The structure of claim 16 , wherein the different materials are selected from the group consisting of Cu, CuMn, CuCo or CuAl.
18. The structure of claim 17 , wherein Mn of the CuMn has a total weight in a range of 0-2% of the CuMn.
19. The structure of claim 11 , wherein the first cap is in a recess of the fill material.
20. The structure of claim 11 , wherein the second cap is in a recess of the fill material of the interconnect structure.