Uniform CMP polishing method

1. A method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates, the method comprising the following:

rotating a polishing pad, the polishing pad having a polishing layer having a polymeric matrix and a thickness, the polishing layer including a center, an outer edge and a radius extending from the center to the outer edge of the polishing pad; radial feeder grooves in the polishing layer separating the polishing layer into polishing regions, the polishing regions being circular sectors defined by two adjacent radial feeder grooves, the polishing regions having a bias for adjusting residence time under the wafer, the bias having a bias angle θ between a bisect line bisecting polishing regions and biased grooves connecting adjacent feeder grooves, the bias angle θ being either an inward bias angle θ sloped inward toward the center of the polishing pad or an outward bias angle θ sloped outward toward the outer edge of the polishing pad, a majority of the biased grooves sweeping the wafer in the same direction, the radial feeder grooves extending at least from a location adjacent the center to a location adjacent the outer edge; and each polishing region including a series of biased grooves connecting a pair of adjacent radial feeder grooves, the series of biased grooves separating a land area and having inner walls closer to the center and outer walls closer to the outer edge;

distributing polishing fluid onto the rotating polishing pad and into the radial feeder grooves and the series of biased grooves, centrifugal forces moving polishing fluid toward the outer edge of the polishing pad through the radial feeder grooves, the series of bias grooves and by overflowing the outer walls to wet a land area then flow into an inner wall of a subsequent bias groove, the majority of the biased grooves having either an inward bias toward the center or an outward bias toward the outer edge of the polishing pad; and

pressing and rotating the wafer against the rotating polishing pad for multiple rotations removes at least one component of the wafer with land areas wet by the overflowing polishing fluid.

2. The method of claim 1 wherein rotating the polishing pad sends used polishing fluid through a portion of the series of biased grooves over the outer edge of the polishing pad to allow flow of new polishing fluid under the wafer.

3. The method of claim 1 wherein the series of biased grooves represent parallel grooves that increase residence time of the polishing fluid under the wafer.

4. The method of claim 1 wherein the series of biased grooves represent parallel grooves that decrease residence time of the polishing fluid under the wafer.

5. The method of claim 1 wherein rotating the polishing pad alternates the wafer between being over one radial feeder groove and being over two radial feeder grooves.

6. A method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates, the method comprising the following:

rotating a polishing pad, the polishing pad having a polishing layer having a polymeric matrix and a thickness, the polishing layer including a center, an outer edge and a radius extending from the center to the outer edge of the polishing pad; radial feeder grooves in the polishing layer separating the polishing layer into polishing regions, the polishing regions being circular sectors defined by two adjacent radial feeder grooves, the polishing regions having a bias for adjusting residence time under the wafer, the bias having a bias angle θ between a bisect line bisecting polishing regions and biased grooves connecting adjacent feeder grooves, the bias angle θ being either an inward bias angle θ sloped inward toward the center of the polishing pad or an outward bias angle θ sloped outward toward the outer edge of the polishing pad, a majority of the biased grooves sweeping the wafer in the same direction, the radial feeder grooves extending at least from a location adjacent the center to a location adjacent the outer edge; and each polishing region including a series of biased grooves connecting a pair of adjacent radial feeder grooves, the series of biased grooves separating a land area and having inner walls closer to the center and outer walls closer to the outer edge;

distributing polishing fluid onto the rotating polishing pad and into the radial feeder grooves and the series of biased grooves, centrifugal forces moving polishing fluid toward the outer edge of the polishing pad through the radial feeder grooves, the series of bias grooves and by overflowing the outer walls to wet a land area then flow into an inner wall of a subsequent bias groove, a majority of the biased grooves having either an inward bias toward the center of the polishing pad at an angle of 20° to 85° from the bisect line or an outward bias toward the outer edge of the polishing pad at an angle of 95° to 160° from the bisect line; and

pressing and rotating the wafer against the rotating polishing pad for multiple rotations removes at least one component of the wafer with land areas wet by the overflowing polishing fluid.

7. The method of claim 6 wherein rotating the polishing pad sends used polishing fluid through a portion of the series of biased grooves over the outer edge of the polishing pad to allow flow of new polishing fluid under the wafer.

8. The method of claim 6 wherein the series of biased grooves represent parallel grooves that increase residence time of the polishing fluid under the wafer.

9. The method of claim 6 wherein the series of biased grooves represent parallel grooves that decrease residence time of the polishing fluid under the wafer.

10. The method of claim 6 wherein rotating the polishing pad alternates the wafer between being over one radial feeder groove and being over two radial feeder grooves.