Semiconductor device
A semiconductor device includes a substrate, a first gate, a second gate, and an insulating structure. The substrate includes a first fin and a second fin. The first gate is disposed over the first fin. The second gate is disposed over the second fin. A gap is formed between the first gate and the second gate, and the gap gets wider toward the substrate. The insulating structure is disposed in the gap. The insulating structure has a top surface and a bottom surface opposite to each other. The bottom surface faces the substrate. An edge of the top surface facing the first gate is curved inward the top surface.
1. A semiconductor device, comprising:
a semiconductor fin above a substrate;
a first gate structure over the semiconductor fin that includes a first end;
a second gate structure over the semiconductor fin that includes a second end; and
an insulating structure above the substrate and isolating the first end of the first gate structure from the second end of the second gate structure, wherein the insulating structure tapers from bottom to top thereof.
2. The semiconductor device of claim 1 , wherein a top surface of the insulating structure is flush with a top surface of the first gate structure.
3. The semiconductor device of claim 1 , wherein a bottom surface of the insulating structure is flush with a bottom surface of the first gate structure.
4. The semiconductor device of claim 1 , wherein a bottom surface of the insulating structure is larger than a top surface of the insulating structure.
5. The semiconductor device of claim 1 , further comprising a pair of dielectric layers on opposite sides of the first gate structure.
6. The semiconductor device of claim 5 , wherein the pair of dielectric layers are further on opposite sides of the insulating structure.
7. The semiconductor device of claim 1 , further comprising a gate insulation layer between the first gate structure and the semiconductor fin, wherein the insulating structure is over the gate insulation layer.
8. A semiconductor device, comprising:
a semiconductor fin above a substrate;
a first gate structure over the semiconductor fin that includes a first end;
a second gate structure over the semiconductor fin that includes a second end; and
an insulating structure adjacent the semiconductor fin and isolating the first end of the first gate structure from the second end of the second gate structure;
wherein a top surface of the first gate structure has an edge curved outwardly.
9. The semiconductor device of claim 8 , wherein the insulating structure has a top portion and the top portion has a uniform width.
10. The semiconductor device of claim 8 , wherein the insulating structure has a bottom portion and a sidewall of the bottom portion is curved outwardly.
11. The semiconductor device of claim 8 , wherein the insulating structure has a bottom portion and a sidewall of the bottom portion is curved inwardly.
12. The semiconductor device of claim 8 , wherein the insulating structure has a bottom portion and a sidewall of the bottom portion is substantially vertical.
13. The semiconductor device of claim 8 , wherein a bottom surface of the first gate structure has an edge curved outwardly.
14. The semiconductor device of claim 8 , wherein a bottom surface and a sidewall of the insulating structure form an acute angle.
15. The semiconductor device of claim 8 , wherein a bottom surface and a sidewall of the insulating structure form a right angle.
16. The semiconductor device of claim 8 , wherein a top surface and a sidewall of the insulating structure form an obtuse angle.
17. The semiconductor device of claim 8 , wherein a top surface and a sidewall of the insulating structure form a right angle.
18. A semiconductor device, comprising:
a substrate;
a first gate structure over the substrate that includes a first end;
a second gate structure over the semiconductor fin that includes a second end; and
an insulating structure above the substrate and isolating the first end of the first gate structure from the second end of the second gate structure, wherein the insulating structure comprises a top portion and a bottom portion between the top portion and the substrate, and the bottom portion has a curved sidewall.
19. The semiconductor device of claim 18 , wherein the curved sidewall is curved outwardly.
20. The semiconductor device of claim 18 , wherein the curved sidewall is curved inwardly.