Magnetoresistive stack/structure and method of manufacturing same
A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.
1. A method of manufacturing a magnetoresistive stack/structure from: (i) a first magnetic region including one or more layers of magnetic material, (ii) a dielectric layer disposed over the first magnetic region, and (iii) a second magnetic region including one or more layers of magnetic material, wherein the second magnetic region is disposed over the dielectric layer, the method comprising:
etching through the second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of the dielectric layer;
depositing a first encapsulation layer on the sidewalls of the second magnetic region and over the exposed surface of the dielectric layer;
after depositing the first encapsulation layer:
etching the first encapsulation layer which is disposed over the exposed surface of the dielectric layer using a first etch process, and
etching re-deposited material disposed on the surface of the dielectric layer using a second etch process, wherein, after etching the first encapsulation layer and the re-deposited material, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region;
etching (i) through the exposed surface of the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) the first magnetic region to provide sidewalls thereof; and
depositing a second encapsulation layer on the sidewalls of the tunnel barrier and the first magnetic region.
2. The method of claim 1 wherein the second etch process is a physical etch.
3. The method of claim 2 wherein the first etch process is a reactive ion etch.
4. The method of claim 1 wherein the second etch process is a sputter etch or an ion milling etch.
5. The method of claim 1 wherein:
the first etch process is a reactive ion etch; and
the second etch process is a sputter etch or an ion milling etch.
6. The method of claim 1 wherein the first encapsulation layer is a silicon oxide, a silicon nitride and/or a TEOS.
7. The method of claim 6 wherein the second encapsulation layer is a silicon oxide, a silicon nitride and/or a TEOS.
8. The method of claim 1 wherein the first encapsulation layer is a silicon oxide, a silicon nitride and/or a TEOS having a thickness of between 50 and 300 Angstroms.
9. The method of claim 1 wherein the second encapsulation layer is a silicon oxide, a silicon nitride and/or a TEOS.
10. A method of manufacturing a magnetoresistive stack/structure from: (i) a first magnetic region including one or more layers of magnetic material, (ii) a first dielectric layer disposed over the first magnetic region, (iii) a second magnetic region including one or more layers of magnetic material, wherein the second magnetic region is disposed over the first dielectric layer, and (iv) a second dielectric layer disposed over the second magnetic region, the method comprising:
etching through the second dielectric layer and the second magnetic region to (i) provide sidewalls of the second dielectric layer and the second magnetic region and (ii) expose a surface of the first dielectric layer;
depositing a first encapsulation layer on the sidewalls of the second magnetic region and over the exposed surface of the first dielectric layer;
after depositing the first encapsulation layer:
etching the first encapsulation layer which is disposed over the exposed surface of the first dielectric layer using a first etch process, and
etching re-deposited material disposed on the surface of the first dielectric layer using a second etch process;
after etching the first encapsulation layer and the re-deposited material, etching (i) through the exposed surface first of dielectric layer to form a tunnel barrier and provide sidewalls thereof, (ii) the first magnetic region to provide sidewalls thereof, and (iii) etching an electrically conductive material disposed beneath the first magnetic region to form an electrically conductive electrode; and
depositing a second encapsulation layer on the sidewalls of the tunnel barrier and the first magnetic region.
11. The method of claim 10 wherein the second etch process is a physical etch.
12. The method of claim 11 wherein the first etch process is a reactive ion etch.
13. The method of claim 10 wherein the second etch process is a sputter etch or an ion milling etch.
14. The method of claim 10 wherein:
the first etch process is a reactive ion etch; and
the second etch process is a sputter etch or an ion milling etch.
15. The method of claim 10 wherein the first encapsulation layer is a silicon oxide, a silicon nitride and/or a TEOS.
16. The method of claim 10 wherein the second encapsulation layer is a silicon oxide, a silicon nitride and/or a TEOS.
17. The method of claim 10 wherein the second encapsulation layer is deposited on the sidewalls of the tunnel barrier and the first magnetic region before etching the electrically conductive material disposed beneath the first magnetic region to form the electrically conductive electrode.