IP Library › Granted Patent US 12,306,382
Granted Patent B2
US 12,306,382 · App. 15/733,931 · Granted May 20, 2025

Imaging device

Inventors: Kotaro Nishimura (Kanagawa, JP); Atsushi Yamamoto (Kanagawa, JP); Yoshinori Toumiya (Kanagawa, JP)
Assignee: Sony Semiconductor Solutions Corporation
G02B13/0045G02B1/118G02B13/0085H04N23/55H10F39/182H10F39/804H10F39/8053H10F39/8057H10F39/8063H10F39/811
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Quick Facts
Patent No.
US 12,306,382
App. No.
15/733,931
Granted
May 20, 2025
Kind
B2
Abstract

The present disclosure relates to an imaging device capable of achieving miniaturization and height reduction of a device configuration, reducing generation of a flare or a ghost, and preventing separation of a lens. Side surfaces of a lens provided on a solid-state imaging element form a multistep shape. Angles formed by the side surfaces forming the multistep shape with respect to an incident direction of incident light differ from each other. The present disclosure is applicable to an imaging device.

Claims (38)

1. An imaging device, comprising:

a solid-state imaging element that generates a pixel signal by photoelectric conversion according to a light amount of incident light; and

a lens group that includes a plurality of lenses and focuses the incident light on a light receiving surface of the solid-state imaging element, wherein

a lowermost layer lens included in the lens group and constituting a lowermost layer with respect to an incident direction of the incident light is provided in a foremost stage in a direction for receiving the incident light,

the lowermost layer lens is an aspherical and recessed lens,

a thickness of a glass substrate provided on the solid-state imaging element is larger than a smallest thickness of the lowermost layer lens at a center position, and a largest thickness of the lowermost layer lens at positions furthest from the center position is larger than the thickness of the glass substrate provided on the solid-state imaging element,

the glass substrate is provided between the solid-state imaging element and the lowermost layer lens at the center position,

an effective region for converging the incident light on the solid-state imaging element is defined in the lowermost layer lens, and side surfaces of the lowermost layer lens corresponding to an outer peripheral portion of the effective region form a multistep shape, and

angles formed by average surfaces of the respective side surfaces forming the multistep shape with respect to the incident direction of the incident light differ from each other.

2. The imaging device according to claim 1 , wherein, in a case where the lowermost layer lens has side surfaces forming two steps, an angle formed by the side surface included in the side surfaces and close to the glass substrate with respect to the incident direction is larger than an angle formed by the side surface away from the glass substrate with respect to the incident direction.

3. The imaging device according to claim 1 , wherein surface roughness of each of the side surfaces forming the multistep shape differs from each other.

4. The imaging device according to claim 3 , wherein, in a case where the lowermost layer lens has side surfaces forming two steps, surface roughness of the side surface included in the side surfaces and close to the glass substrate is larger than surface roughness of the side surface away from the glass substrate.

5. The imaging device according to claim 1 , wherein, in a case where the side surfaces form a multistep shape, the side surface included in the side surfaces and closest to the glass substrate has a hemming bottom portion at a boundary with the glass substrate.

6. The imaging device according to claim 1 , wherein an area of the lowermost layer lens is larger than an area of the glass substrate.

7. The imaging device according to claim 1 , wherein an inflection point is formed in each of the side surfaces included in the lowermost layer lens and forming the multistep shape in a cross-sectional shape that passes through a center of the lowermost layer lens and passes through an approximately central position of a short side or a long side of the lowermost layer lens.

8. The imaging device according to claim 7 , wherein the inflection point is formed in each of the side surfaces included in the lowermost layer lens and forming the multistep shape in such a position that a height of the inflection point from the glass substrate becomes larger than a height corresponding to the smallest thickness of the lowermost layer lens.

9. The imaging device according to claim 1 , wherein a distance difference between respective average surfaces of the side surfaces included in the lowermost layer lens and forming the multistep shape is larger than a thickness of a silicon substrate constituting the solid-state imaging element.

10. The imaging device according to claim 1 , wherein a distance difference between respective average surfaces of the side surfaces included in the lowermost layer lens and forming the multistep shape is larger than 1% of a region width of the effective region of the lowermost layer lens in a direction perpendicular to the incident direction of the incident light.

11. The imaging device according to claim 1 , wherein the solid-state imaging element has a laminated and non-cavity structure.

12. The imaging device according to claim 1 , wherein a width of the effective region, a width of a non-effective region corresponding to the outer peripheral portion of the effective region of the lowermost layer lens, a width of a region where the glass substrate is exposed, and a width of a region where a scribe line is defined have a relation of “the width of the effective region>the width of the non-effective region>the width of the region where the glass substrate is exposed>the width of the region where the scribe line is defined”.

13. The imaging device according to claim 12 , wherein an alignment mark for controlling alignment between the lowermost layer lens and the glass substrate is formed in the region where the glass substrate is exposed.

14. The imaging device according to claim 1 , wherein an effective region for converging the incident light on the solid-state imaging element is defined in the lowermost layer lens, the side surfaces of the lowermost layer lens include a multistep configuration portion having a multistep shape and located in a region other than a part of the outer peripheral portion of the effective region, and a non-multistep configuration portion having no multistep shape and located in the part of the outer peripheral portion of the effective region.

15. The imaging device according to claim 14 , wherein the part of the outer peripheral portion of the effective region is at least any one of respective corners and positions near substantially centers of respective sides of the outer peripheral portion of the effective region of the lowermost layer lens having a square shape.

16. The imaging device according to claim 14 , wherein the part of the outer peripheral portion of the effective region includes respective corners and a plurality of positions in respective sides of the outer peripheral portion of the effective region of the lowermost layer lens having a square shape.

17. The imaging device according to claim 14 , wherein the part of the outer peripheral portion of the effective region includes a plurality of asymmetric positions of the outer peripheral portion of the effective region of the lowermost layer lens having a square shape.

18. The imaging device according to claim 14 , wherein the part of the outer peripheral portion of the effective region has a predetermined width in an outer peripheral direction of the effective region of the lowermost layer lens having a square shape.

19. The imaging device according to claim 14 , wherein the lowermost layer lens is formed by using a mold that has a vent guide at a position corresponding to the non-multistep configuration portion.

20. An electronic apparatus, comprising:

an imaging device, comprising:

a solid-state imaging element that generates a pixel signal by photoelectric conversion according to a light amount of incident light; and

a lens group that includes a plurality of lenses and focuses the incident light on a light receiving surface of the solid-state imaging element, wherein

a lowermost layer lens included in the lens group and constituting a lowermost layer with respect to an incident direction of the incident light is provided in a foremost stage in a direction for receiving the incident light,

the lowermost layer lens is an aspherical and recessed lens,

a thickness of a glass substrate provided on the solid-state imaging element is larger than a smallest thickness of the lowermost layer lens at a center position, and a largest thickness of the lowermost layer lens at positions furthest from the center position is larger than the thickness of the glass substrate provided on the solid-state imaging element,

the glass substrate is provided between the solid-state imaging element and the lowermost layer lens at the center position,

an effective region for converging the incident light on the solid-state imaging element is defined in the lowermost layer lens, and side surfaces of the lowermost layer lens corresponding to an outer peripheral portion of the effective region form a multistep shape, and

angles formed by average surfaces of the respective side surfaces forming the multistep shape with respect to the incident direction of the incident light differ from each other; and

a signal processor that processes signals received from the imaging device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 29, 2021
From: NISHIMURA, KOTARO; YAMAMOTO, ATSUSHI; TOUMIYA, YOSHINORI
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 055759/0101 →
Priority Claims (2)
JP 2018-110254 · Jun 8, 2018 · national
JP 2019-033676 · Feb 27, 2019 · national
Continuity (1)
Related Publication 20210223512A1 · Jul 22, 2021
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