Power semiconductor module with heat dissipation plate
An object of the present invention is to provide a structure, particularly, a power semiconductor module, which suppresses a bypass flow of a cooling medium and improves cooling efficiency. A structure according to the present invention includes a heat dissipation plate thermally connected to a heating element, and a resin region having a resin material that fixes the heating element and the heat dissipation plate, wherein the heat dissipation plate includes a fin portion including a plurality of fins protruding from a heat dissipation surface of the heat dissipation plate and formed to be exposed from the sealing resin material, and a wall portion formed to protrude from the heat dissipation surface to a same side as the fin and which separates the fin portion and the resin region.
1. A structure comprising:
a ceramic board;
a heat dissipation plate thermally connected to a heating element; and
a resin region having a resin material that immobilizes the heating element and the heat dissipation plate, wherein
the heat dissipation plate includes
a fin portion including a plurality of fins protruding from a heat dissipation surface of the heat dissipation plate and formed to be exposed from the sealing resin material,
a wall portion that directly contacts the resin material and that is formed to protrude from the heat dissipation surface to a same side as the fin and which separates the fin portion and the resin region,
the ceramic board consists of an Al base plate, a ceramic insulator, and Al wiring, and
the Al wiring, the Al base, the fin portion, the wall portion, and a tapered surface are integrally formed by molten metal in which molten Al is poured into a mold.
2. The structure according to claim 1 , wherein
the wall portion has a first region and a second region in a periphery of the fin portion, and
the first region is formed to be smaller than the second region in protruding height.
3. The structure according to claim 2 , wherein
the first region is formed to be smaller than the fin in the protruding height.
4. The structure according to claim 1 , wherein
the wall portion has a deformed portion formed along a boundary between the wall portion exposed from the sealing resin material and the resin region.
5. The structure according to claim 2 , wherein
the resin region has a step between a surface in contact with the first region and a surface in contact with the second region.
6. The structure according to claim 2 , wherein
the wall portion has a tapered portion connecting a surface of the first region and a surface of the second region in a boundary portion between the first region and the second region.
7. The structure according to claim 1 , wherein
a tip of the fin is formed on a same plane as an end of the wall portion.
8. The structure according to claim 1 , wherein
the heating element is a power semiconductor device that converts direct current power into alternating current power by a switching operation,
a current terminal electrically connected with the power semiconductor device and which transmits a current is provided, and
the current terminal protrudes from the resin region.
9. The structure according to claim 1 , wherein
the heat dissipation plate has a first base plate and a second base plate, and
the heating element is disposed between the first base plate and the second base plate.
10. An assembly comprising:
the structure according to claim 1 ; and
a waterway structure having flat wall surfaces into which the structure is inserted, wherein
a waterway in which a cooling medium is circulated is formed between the flat wall surface and the heat dissipation surface.
11. The structure according to claim 1 , wherein
the plurality of fins have a first cross sectional shape, and
the wall portion has a second cross sectional shape that is different than the first cross sectional shape.