Dual cool power module with stress buffer layer
Described implementations provide wireless, surface mounting of at least two semiconductor die on die attach pads (DAPs) of the semiconductor package, where the at least two semiconductor die are electrically connected by a clip. A stress buffer layer may be provided on the clip, and a heatsink may be provided on the stress buffer layer. The heatsink may be secured with an external mold material.
1. A semiconductor device package, comprising:
a leadframe;
a first pin-fin heatsink disposed on the leadframe;
a first semiconductor die flip-attached to a patterned metal layer of a direct bonded metal (DBM) disposed on the leadframe;
a second semiconductor die disposed on the patterned metal layer of the DBM;
a clip electrically connected to the first semiconductor die and the second semiconductor die and connecting the first semiconductor die, the clip, and the second semiconductor die in series;
an electrically-isolating layer disposed on the clip;
a second pin-fin heatsink disposed on the clip with the electrically-isolating layer disposed therebetween; and
a mold material encapsulating the first semiconductor die, the second semiconductor die, the clip, and the electrically-isolating layer, and partially encapsulating the leadframe, the first pin-fin heatsink, and the second pin-fin heatsink.
2. The semiconductor device package of claim 1 , wherein the first semiconductor die is soldered to the leadframe.
3. The semiconductor device package of claim 1 , wherein the clip is soldered to the first semiconductor die and the second semiconductor die.
4. The semiconductor device package of claim 1 , wherein the first pin-fin heatsink includes a first base with first fins attached thereto at a first surface of the first base, the first fins being parallel to one another and perpendicular to the first base, and further wherein the second pin-fin heatsink includes a second base with second fins attached thereto at a second surface of the first base, the second fins being parallel to one another and perpendicular to the second base.
5. The semiconductor device package of claim 4 , wherein the mold material encapsulates the first pin-fin heatsink, including at least the first base, the first surface, and a portion of the first fins, and further wherein the mold material encapsulates the second pin-fin heatsink, including at least the second base, the second surface, and a portion of the second fins.
6. The semiconductor device package of claim 1 , wherein the first semiconductor die includes a transistor, and the second semiconductor die includes a diode.
7. The semiconductor device package of claim 6 , wherein the transistor is an insulated gate bipolar transistor (IGBT), and the diode is a fast recovery diode (FRD).
8. A semiconductor device package, comprising:
a leadframe;
a substrate connected to the leadframe;
a first pin-fin heatsink connected to the substrate;
a first semiconductor die disposed on a patterned metal layer of the substrate;
a second semiconductor die disposed on the patterned metal layer of the substrate;
a clip electrically connected to the first semiconductor die and the second semiconductor die;
an electrically-isolating layer disposed on the clip;
a second pin-fin heatsink disposed on the clip with the electrically-isolating layer disposed therebetween; and
a mold material encapsulating the first semiconductor die, the second semiconductor die, the clip, and the electrically-isolating layer, and partially encapsulating the leadframe, the first pin-fin heatsink, and the second pin-fin heatsink,
wherein the first semiconductor die is flip-attached to the patterned metal layer of the substrate, and the first semiconductor die, the clip, and the second semiconductor die are connected in series.
9. The semiconductor device package of claim 8 , wherein the first semiconductor die is soldered to the patterned metal layer of the substrate.
10. The semiconductor device package of claim 8 , wherein the clip is soldered to the first semiconductor die and the second semiconductor die.
11. The semiconductor device package of claim 8 , wherein the first pin-fin heatsink includes a first base with first fins attached thereto at a first surface of the first base, the first fins being parallel to one another and perpendicular to the first base, and further wherein the second pin-fin heatsink includes a second base with second fins attached thereto at a second surface of the first base, the second fins being parallel to one another and perpendicular to the second base.
12. The semiconductor device package of claim 11 , wherein the mold material encapsulates the first pin-fin heatsink, including at least the first base, the first surface, and a portion of the first fins, and further wherein the mold material encapsulates the second pin-fin heatsink, including at least the second base, the second surface, and a portion of the second fins.
13. The semiconductor device package of claim 8 , wherein the first semiconductor die includes a transistor, and the second semiconductor die includes a diode.
14. The semiconductor device package of claim 13 , wherein the transistor is an insulated gate bipolar transistor (IGBT), and the diode is a fast recovery diode (FRD).
15. A semiconductor device package, comprising:
a leadframe;
a substrate connected to the leadframe;
a first pin-fin heatsink connected to the leadframe;
a first semiconductor die disposed on a patterned metal layer of the substrate;
a second semiconductor die disposed on the patterned metal layer of the substrate;
a clip electrically connected to the first semiconductor die and the second semiconductor die;
an electrically-isolating layer disposed on the clip; and
a second pin-fin heatsink disposed on the clip with the electrically-isolating layer disposed therebetween,
wherein the first semiconductor die is flip-attached to the patterned metal layer of the substrate, and the first semiconductor die, the clip, and the second semiconductor die are connected in series.
16. The semiconductor device package of claim 15 , further comprising:
a mold material encapsulating the first semiconductor die, the second semiconductor die, the clip, and the electrically-isolating layer, and partially encapsulating the leadframe, the first pin-fin heatsink, and the second pin-fin heatsink.
17. The semiconductor device package of claim 16 , wherein the first pin-fin heatsink includes a first base with first fins attached thereto at a first surface of the first base, the first fins being parallel to one another and perpendicular to the first base, and further wherein the second pin-fin heatsink includes a second base with second fins attached thereto at a second surface of the first base, the second fins being parallel to one another and perpendicular to the second base.
18. The semiconductor device package of claim 17 , wherein the mold material encapsulates the first pin-fin heatsink, including at least the first base, the first surface, and a portion of the first fins, and further wherein the mold material encapsulates the second pin-fin heatsink, including at least the second base, the second surface, and a portion of the second fins.