Copper paste for joining, method for producing joined body, and method for producing semiconductor device
Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 μm to 0.8 μm, and micro copper particles having a volume-average particle size of 2 μm to 50 μm, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.
1. Copper paste for joining, comprising:
metal particles; and
a dispersion medium,
wherein the metal particles include sub-micro copper particles having a volume-average particle size of 0.12 μm to 0.8 μm, and micro copper particles having a volume-average particle size of 2 μm to 50 μm,
a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and
the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.
2. The copper paste for joining according to claim 1 ,
wherein the micro copper particles have a flake shape.
3. The copper paste for joining according to claim 1 ,
wherein the copper paste for joining is used without pressurization.
4. A method for manufacturing a joined body, comprising:
a process of preparing a laminated body in which a first member, and the copper paste for joining according to claim 1 and a second member that are disposed on a side whereon a weight of the first member acts, are laminated in this order; and sintering the copper paste for joining in a state of receiving the weight of the first member, or the weight of the first member and a pressure of 0.01 MPa or lower.
5. A method for manufacturing a semiconductor device, comprising:
a process of preparing a laminated body in which a first member, and the copper paste for joining according to claim 1 and a second member that are disposed on a side whereon a weight of the first member acts, are laminated in this order; and sintering the copper paste for joining in a state of receiving the weight of the first member, or the weight of the first member and a pressure of 0.01 MPa or lower,
wherein at least one of the first member and the second member is a semiconductor element.
6. A joined body, comprising:
a first member;
a second member; and
a sintered body of the copper paste for joining according to claim 1 , the sintered body joining the first member and the second member.
7. The joined body according to claim 6 ,
wherein at least one of the first member and the second member includes at least one metal selected from the group consisting of copper, nickel, silver, gold, and palladium on a surface that is in contact with the sintered body.
8. A semiconductor device, comprising:
a first member;
a second member; and
a sintered body of the copper paste for joining according to claim 1 , the sintered body joining the first member and the second member,
wherein at least one of the first member and the second member is a semiconductor element.
9. The copper paste for joining according to claim 2 ,
wherein the copper paste for joining is used without pressurization.