Wafer inspection method and wafer inspection apparatus
Provided is a wafer inspection method capable of examining whether pits are formed in wafer surfaces. The wafer inspection method includes the steps of: choosing defects of a wafer using a first optical system; selecting potential pits from the chosen defects; and classifying the potential pits into pits and defects other than the pits using a second optical system.
1. A wafer inspection method comprising:
choosing defects of a wafer by scanning the wafer by a first optical system including an annular fiber optic illuminator and a first light receiving unit which is placed perpendicular to a surface of the wafer while the first optical system is used to irradiate a certain position on the surface of the wafer and receive perpendicular scattered light resulted from the defects of the wafer, thereby collecting information of brightness at the certain position;
selecting potential pits from the chosen defects; and
classifying the potential pits into pits and the defects other the pits using a second optical system including a parallel light illuminating light source and a second light receiving unit which is placed to be tilted relative to the surface of the wafer by imaging the potential pits with every change of the focus position of the second optical system, the classification being performed based on light and dark patterns of the imaged potential pits caused due to the change of the focus position.
2. The wafer inspection method according to claim 1 , wherein in the classifying, the classification is performed by identifying, as pits, potential pits which are imaged darkly when the focus position is in a reverse position and are imaged brightly when the focus position is in a forward position.
3. The wafer inspection method according to claim 1 , wherein the potential pits include particles.
4. The wafer inspection method according to claim 1 , wherein in the selecting, defects having a major axis or a long side of 20 μm or less are selected as the potential pits from the defects.
5. The wafer inspection method according to claim 1 , wherein the wafer is a silicon wafer subjected to mirror polishing.
6. A wafer inspection apparatus comprising:
a first optical system including an annular fiber optic illuminator and a first light receiving unit which is placed perpendicular to a surface of a wafer;
a second optical system including a parallel light illuminating light source and a second light receiving unit which is placed to be tilted relative to the surface of the wafer;
a first scanning unit scanning the surface of the wafer in parallel by the first optical system;
a second scanning unit scanning the surface of the wafer in parallel by the second optical system, with the tilt of the second optical system being maintained; and
a control unit controlling the first optical system, the second optical system, the first scanning unit, and the second scanning unit,
wherein the control unit controls the first optical system to irradiate a certain portion of the surface of the wafer, makes the first light receiving unit receive perpendicular scattered light resulted from defects of the wafer; controls the first scanning unit to scan the wafer with the first optical system thereby collecting brightness information of the perpendicular scattered light while collecting brightness information of the entire surface of the wafer; and chooses defects of the wafer, selects potential pits from the chosen defects, controls the second optical system and the second scanning unit to change the focus position of the second optical system thereby imaging the potential pits, and classifies the potential pits into pits and defects other than the pits based on light and dark patterns of the imaged potential pits caused due to the change of the focus position of the second optical system.