IP Library Granted Patent US 11,046,869
Granted Patent B2
US 11,046,869 · App. 15/758,399 · Granted Jun 29, 2021

Polishing liquid, polishing liquid set, and substrate polishing method

Inventors: Toshiaki Akutsu (Tokyo, JP); Hisataka Minami (Tokyo, JP); Tomohiro Iwano (Tokyo, JP); Tetsuro Yamashita (Tokyo, JP); Masako Aoki (Tokyo, JP); Masato Fukasawa (Tokyo, JP)
Assignee: SHOWA DENKO MATERIALS CO., LTD.
C09G1/02B24B1/00B24B37/044C09G1/00C09G1/04C09G1/06C09K3/1454C09K3/1463C09K13/06H01L21/304H01L21/30625H01L21/31053H01L21/3212
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Quick Facts
Patent No.
US 11,046,869
App. No.
15/758,399
Granted
Jun 29, 2021
Kind
B2
Abstract

A polishing liquid comprising a liquid medium, an abrasive grain and a polymer, wherein the polymer includes a first molecular chain having a functional group directly bonded thereto, and a second molecular chain branched from the first molecular chain, and the functional group is at least one selected from the group consisting of a carboxyl group, a carboxylic acid salt group, a hydroxyl group, a sulfo group and a sulfonic acid salt group.

Claims (50)

1. A polishing liquid comprising:

a liquid medium;

abrasive grains comprising a hydroxide of a tetravalent metal element; and

a polymer, wherein

the polymer includes a first molecular chain having a functional group directly bonded thereto, and a second molecular chain branched from the first molecular chain,

the functional group comprises at least one selected from the group consisting of a carboxyl group, a carboxylic acid salt group, a hydroxyl group, a sulfo group and a sulfonic acid salt group,

the first molecular chain comprises styrene as a monomer unit,

the second molecular chain comprises at least one selected from the group consisting of a polyether chain, a polyvinyl alcohol chain and a polyvinylpyrrolidone chain, and

a content of the polymer is 0.001 mass % or greater and 0.5 mass % or less based on a total mass of the polishing liquid, and

pH of the polishing liquid is 2.0-8.0.

2. The polishing liquid according to claim 1 , wherein the functional group comprises at least one selected from the group consisting of a carboxyl group, a carboxylic acid salt group, a sulfa group and a sulfonic acid salt group.

3. The polishing liquid according to claim 1 , wherein the functional group comprises at least one selected from the group consisting of a carboxyl group and a carboxylic acid salt group.

4. The polishing liquid according to claim 1 , wherein the first molecular chain further comprises a structural unit derived from maleic acid.

5. The polishing liquid according to claim 1 , wherein the second molecular chain comprises at least one selected from the group consisting of a hydrophilic molecular chain and a hydrophobic molecular chain.

6. The polishing liquid according to claim 1 , wherein the second molecular chain comprises a polyoxyalkylene chain.

7. The polishing liquid according to claim 1 , wherein the abrasive grains further comprise at least one selected from the group consisting of ceria, silica, alumina, and zirconia.

8. The polishing liquid according to claim 1 , wherein the hydroxide of a tetravalent metal element comprises at least one selected from the group consisting of a hydroxide of a rare earth metal element and a hydroxide or zirconium.

9. A polishing liquid set comprising:

constituent components of the polishing liquid according to claim 1 , separately stored as a first liquid and a second liquid, wherein

the first liquid comprises the abrasive grains and a liquid medium, and

the second liquid comprises the polymer and a liquid medium.

10. A polishing method for a base substrate, comprising:

a step of polishing a surface to be polished of a base substrate using the polishing liquid according to claim 1 .

11. The polishing method according to claim 10 , wherein the surface to be polished contains silicon oxide.

12. A polishing method for a base substrate having an insulating material and silicon nitride,

the polishing method comprising a step of selectively polishing the insulating material with respect to the silicon nitride using the polishing liquid according to claim 1 .

13. A polishing method for a base substrate having an insulating material and polysilicon,

the polishing method comprising a step of selectively polishing the insulating material with respect to the polysilicon using the polishing liquid according to claim 1 .

14. A polishing liquid comprising:

a liquid medium;

abrasive grains comprising a hydroxide of a tetravalent metal element; and

a polymer, wherein

the polymer includes a first molecular chain having a functional group directly bonded thereto, and a second molecular chain branched from the first molecular chain,

the functional group comprises at least one selected from the group consisting of a carboxyl group, a carboxylic acid salt group, a hydroxyl group, a sulfa group and a sulfonic acid salt group,

the first molecular chain comprises styrene as a monomer unit,

the second molecular chain comprises at least one selected from the group consisting of a hydrophilic molecular chain and a hydrophobic molecular chain, and

a content of the polymer is 0.001 mass % or greater and 0.5 mass % or less based on a total mass of the polishing liquid, and

pH of the polishing liquid is 2.0-8.0.

15. The polishing liquid according to claim 14 , wherein the functional group comprises at least one selected from the group consisting of a carboxyl group, a carboxylic acid salt group, a sulfa group and a sulfonic acid salt group.

16. The polishing liquid according to claim 14 , wherein the functional group comprises at least one selected from the group consisting of a carboxyl group and a carboxylic acid salt group.

17. The polishing liquid according to claim 14 , wherein the first molecular chain further comprises a structural unit derived from maleic acid.

18. The polishing liquid according to claim 14 , wherein the second molecular chain comprises a polyoxyalkylene chain.

19. A polishing method for a base substrate, comprising:

a step of polishing a surface to be polished of a base substrate using the polishing liquid according to claim 14 .

20. The polishing liquid according to claim 14 , wherein the abrasive grains further comprise at least one selected from the group consisting of cerin, silica, alumina, and zirconia.

21. A polishing liquid set comprising:

constituent components of the polishing liquid according to claim 14 , separately stored as a first liquid and a second liquid, wherein

the first liquid comprises the abrasive grains and a liquid medium, and

the second liquid comprises the polymer and a liquid medium.

22. The polishing liquid according to claim 14 , wherein the hydroxide of a tetravalent metal element comprises at least one selected from the group consisting of a hydroxide of a rare earth metal element and a hydroxide or zirconium.

Assignments (5)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Mar 8, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062992/0805 →
CHANGE OF NAME Recorded Apr 20, 2021
From: HITACHI CHEMICAL COMPANY, LTD.
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 055981/0948 →
CORRECTIVE ASSIGNMENT TO CORRECT THE THIRD AND FOURTH INVENTOR NAMES PREVIOUSLY RECORDED AT REEL: 046359 FRAME: 0280. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT . Recorded Jul 20, 2018
From: AKUTSU, TOSHIAKI; MINAMI, HISATAKA; IWANO, TOMOHIRO; YAMASHITA, TETSURO; AOKI, MASAKO; FUKASAWA, MASATO
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 046597/0328 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 16, 2018
From: AKUTSU, TOSHIAKI; MINAMI, HISATAKA; MINAMI, TOMOHIRO; YAMASHITA, TETUSRO; AOKI, MASAKO; FUKASAWA, MASATO
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 046359/0280 →