Insulation layer arrangement for magnetic tunnel junction device

1. A semiconductor device, comprising:

a substrate including a cell region and a peripheral region;

a magnetic tunnel junction pattern on the cell region;

a capping insulation layer covering a sidewall of the magnetic tunnel junction pattern;

a conductive mask pattern on the magnetic tunnel junction pattern;

a lower insulation layer between the capping insulation layer and the substrate; and

an upper insulation layer including a first portion on the capping insulation layer and a second portion on the substrate in the peripheral region,

wherein a top edge of the capping insulation layer is in direct contact with a point on a sidewall of the conductive mask pattern, the point being between top and bottom surfaces of the conductive mask pattern,

wherein a bottom surface of the second portion is disposed lower than a bottom surface of the capping insulation layer,

wherein the lower insulation layer has a top surface including a concave portion in contact with the capping insulation layer,

wherein the bottom surface of the capping insulation layer and the top surface of the lower insulation layer are both disposed lower than a bottom surface of the magnetic tunnel junction pattern, and

wherein the capping insulation layer is interposed between the upper insulation layer and the concave portion to completely fill the concave portion below the magnetic tunnel junction pattern, and an entire top surface of the capping insulation layer is substantially flat.

2. The semiconductor device of claim 1 , wherein the second portion of the upper insulation layer has a thickness greater than a thickness of the first portion of the upper insulation layer.

3. The semiconductor device of claim 1 , wherein the first and second portions are connected to each other.

4. The semiconductor device of claim 1 , wherein a top surface of the first portion is substantially leveled with a top surface of the second portion.

5. The semiconductor device of claim 1 , wherein a thickness of the second portion of the upper insulation layer is greater than a sum of a thickness of the capping insulation layer and a thickness of the first portion of the upper insulation layer.

6. The semiconductor device of claim 1 , wherein the top surface of the capping insulation layer is positioned between those of top and bottom surfaces of the conductive mask pattern.

7. The semiconductor device of claim 1 , wherein the lower insulation layer and the second portion are at least partially overlapped with each other in a horizontal direction.

8. The semiconductor device of claim 1 , wherein a thickness of the second portion is greater than a sum of a thickness of the lower insulation layer and a thickness of the capping insulation layer.

9. The semiconductor device of claim 1 , wherein a bottom surface of the lower insulation layer is substantially leveled with the bottom surface of the second portion.

10. The semiconductor device of claim 1 , wherein the lower insulation layer extends between the second portion and the substrate.

11. The semiconductor device of claim 10 , wherein a thickness of the lower insulation layer between the second portion and the substrate is less than that of the lower insulation layer between the capping insulation layer and the substrate.

12. The semiconductor device of claim 1 , wherein the lower insulation layer does not extend onto the peripheral region.

13. The semiconductor device of claim 1 , wherein the upper insulation layer includes a low-k dielectric material.

14. A semiconductor device, comprising:

a substrate including a cell region and a peripheral region;

a pair of magnetic tunnel junction patterns on the cell region;

a pair of conductive mask patterns respectively on the pair of magnetic tunnel junction patterns;

a capping insulation layer between the pair of magnetic tunnel junction patterns;

a lower insulation layer between the capping insulation layer and the substrate; and

an upper insulation layer including a first portion on the capping insulation layer,

wherein a top edge of the capping insulation layer is in direct contact with a point on a sidewall of each of the pair of conductive mask patterns, the point being between top and bottom surfaces of each of the pair of conductive mask patterns,

wherein the lower insulation layer has a top surface including a recess portion in contact with the capping insulation layer,

wherein the bottom surface of the capping insulation layer is disposed lower than a bottom surface of the pair of magnetic tunnel junction patterns, and

wherein an entire top surface of the capping insulation layer is substantially flat.

15. The semiconductor device of claim 14 , wherein the first portion covers the pair of conductive mask patterns.

16. The semiconductor device of claim 14 , wherein the pair of magnetic tunnel junction patterns comprises a first magnetic tunnel junction pattern and a second magnetic tunnel junction pattern, and

wherein the bottom surface of the capping insulation layer extends from the first magnetic tunnel junction pattern to the second magnetic tunnel junction pattern and convexly protrudes toward the substrate between the pair of magnetic tunnel junction patterns.

17. The semiconductor device of claim 14 , wherein the capping insulation layer fills a gap between the pair of magnetic tunnel junction patterns.

18. The semiconductor device of claim 14 , wherein the capping insulation layer completely fills the recess portion below the pair of magnetic tunnel junction patterns.