Memory cell and methods thereof
According to various embodiments, a memory cell may include: a channel region, a gate isolation structure disposed at the channel region; and a memory structure disposed over the gate isolation structure, the memory structure comprising a first electrode structure, a second electrode structure, and at least one remanent-polarizable layer disposed between the first electrode structure and the second electrode structure; wherein the first electrode structure, the gate isolation structure, and the channel region form a first capacitor structure defining a capacitor area of a first size; and wherein the first electrode structure, the at least one remanent-polarizable layer, and the second electrode structure form a second capacitor structure defining a capacitor area of a second size, wherein the second size is less than the first size.
1. A memory cell, comprising:
a channel region;
a gate isolation structure disposed over the channel region, wherein the gate isolation structure has a planar shape;
a first electrode structure disposed over the gate isolation structure, wherein the first electrode structure has a concave shape;
at least one remanent-polarizable layer disposed over the first electrode structure, wherein the at least one remanent-polarizable layer has a concave shape;
a second electrode structure disposed over the at least one remanent-polarizable layer;
wherein the gate isolation structure and the first electrode structure form a first lateral interface,
wherein the first electrode structure and the at least one remanent-polarizable layer form a second lateral interface,
wherein a lateral dimension of the second lateral interface is less than a lateral dimension of the first lateral interface, and
wherein a width of the first electrode structure is substantially the same as a width of the gate isolation structure.
2. The memory cell of claim 1 ,
wherein the gate isolation structure and the channel region form a third lateral interface,
wherein a lateral dimension of the third lateral interface is greater than the lateral dimension of the second lateral interface.
3. The memory cell of claim 2 ,
wherein the lateral dimension of the third lateral interface is substantially equal to the lateral dimension of the first lateral interface.
4. The memory cell of claim 1 ,
wherein the at least one remanent-polarizable layer and the second electrode structure form a fourth lateral interface, wherein a lateral dimension of the fourth lateral interface is less than the lateral dimension of the first lateral interface.
5. The memory cell of claim 4 ,
wherein the lateral dimension of the fourth lateral interface is substantially equal to the lateral dimension of the second lateral interface.
6. The memory cell of claim 1 , further comprising:
at least one electrically insulating portion disposed over the first electrode structure and laterally surrounding the second electrode structure or laterally surrounding both the second electrode structure and the at least one remanent-polarizable layer.
7. The memory cell of claim 6 ,
wherein the at least one electrically insulating portion is disposed over the at least one remanent-polarizable layer and laterally surrounds the second electrode structure.
8. The memory cell of claim 6 ,
wherein the second electrode structure covers a sidewall of the at least one electrically insulating portion at least partially.
9. The memory cell of claim 1 , further comprising:
at least one electrically insulating portion laterally surrounding the first electrode structure.
10. The memory cell of claim 9 ,
wherein the at least one electrically insulating portion comprises a sidewall facing the first electrode structure and, wherein the first electrode structure covers the sidewall of the at least one electrically insulating portion at least partially.
11. The memory cell of claim 9 ,
wherein the second electrode structure is disposed between at least two sections of the at least one remanent-polarizable layer.
12. The memory cell of claim 1 ,
wherein a width of the first electrode structure is greater than a width of the second electrode structure.
13. The memory cell of claim 1 ,
wherein a width of the first electrode structure is greater than a width of the at least one remanent-polarizable layer.
14. The memory cell of claim 1 , further comprising:
a semiconductor portion and at least a first source/drain region and a second source/drain region disposed in the semiconductor portion; wherein the channel region extends in the semiconductor portion from the first source/drain region to the second source/drain region.
15. The memory cell of claim 1 ,
wherein the at least one remanent-polarizable layer comprises at least one ferroelectric material.
16. The memory cell of claim 1 , wherein the concave shape is a u-shape.
17. A memory cell, comprising:
a channel region;
a gate isolation structure disposed over the channel region having a first electrically insulating layer and a second electrically insulating layer;
wherein the first electrically insulating layer has a planar shape;
wherein the second electrically insulating layer of the gate isolation structure has a concave shape and is disposed over the first electrically insulating layer;
a first electrode structure disposed over the second electrically insulating layer, wherein the first electrode structure has a concave shape;
at least one remanent-polarizable layer disposed over the first electrode structure, wherein the at least one remanent-polarizable layer has a concave shape;
a second electrode structure disposed over the at least one remanent-polarizable layer;
wherein the first electrically insulating layer and the second electrically insulating layer form a first lateral interface;
wherein the second electrically insulating layer and the first electrode form a second lateral interface;
wherein a lateral dimension of the second lateral interface is less than a lateral dimension of the first lateral interface; and
wherein a width of the second electrically insulating layer is substantially the same as a width of the first electrically insulating layer.