Tunnel field effect transistor devices
A semiconductor tunnel FET (field effect transistor) including a plurality of nanosheet channels disposed between a first source/drain region and a second source/drain region. The first source/drain region includes a p-type material; and the second source/drain region includes an n-type material.
1 . A semiconductor nanosheet tunnel FET (field effect transistor) comprising
a plurality of nanosheet channels disposed between a first source/drain region and a second source/drain region;
wherein the first source/drain region comprises a p-type material;
wherein the second source/drain region comprises an n-type material; and
wherein the nanosheet channels adjacent to the n-type material comprise n-type dopants.
2 . The nanosheet tunnel FET according to claim 1 further comprising inner spacers disposed between otherwise adjacent nanosheet channels.
3 . The nanosheet tunnel FET according to claim 1 , further comprising independent first source/drain and second source/drain electrical contacts.
4 . The nanosheet tunnel FET according to claim 1 wherein the p-type material comprises a SiGe:B doped material.
5 . The nanosheet tunnel FET according to claim 1 wherein the n-type material comprises a Si:P doped material.
6 . The nanosheet tunnel FET according to claim 1 further comprising a high-k metal gate structure around the nanosheet channels.
7 . The nanosheet FET according to claim 1 , wherein the nanosheet channels comprise a p-type dopant.
8 . The nanosheet FET according to claim 1 , wherein a nanosheet channel portion of the plurality of nanosheet channels adjacent to the first source/drain region comprise a p-type dopant and a nanosheet channel portion of the plurality of nanosheet channels adjacent to the second source/drain region comprises an n-type dopant.
9 . The nanosheet FET according to claim 1 , wherein the first source/drain region comprises a p-type dopant concentration between about 1×10 19 /cm3 to about 1×10 2 /cm3.
10 . The nanosheet FET according to claim 1 , wherein the second source/drain region comprises n n-type dopant concentration between about 1×10 20 /cm3 to about 1×10 21 /cm3.