Imaging element, stacked-type imaging element, solid-state imaging device, and driving method for solid-state imaging device

1. An imaging device comprising:

a plurality of pixels, each pixel of the plurality of pixels including:

a first photoelectric conversion unit disposed in a substrate, and

a second photoelectric conversion unit disposed above and at a light-incident side of the substrate, the second photoelectric conversion unit including:

a first electrode,

a stacked layer structure including a plurality of layers above the first electrode, wherein a first layer of the stacked layer structure is an oxide semiconductor layer, and wherein a second layer of the stacked layer structure is a photoelectric conversion layer,

a second electrode above the stacked layer structure,

a third electrode disposed at a same layer as the first electrode, and

an insulating material between the third electrode and the stacked layer structure,

wherein a portion of the insulating material is between the first electrode and the third electrode.

2. The imaging device according to claim 1 ,

wherein a first region of the insulating material is between the third electrode and the stacked layer structure; and

wherein a second region of the insulating material is between the third electrode and the first electrode, wherein the second region of the insulating material includes a first insulating layer and a second insulating layer, and wherein the first insulating layer is stacked on the second insulating layer.

3. The imaging device according to claim 2 , wherein a portion of the second insulating layer in the second region is between the first electrode and the stacked layer structure.

4. The imaging device according to claim 2 , wherein the first region and the second region include a different number of insulating layers including the insulating material.

5. The imaging device according to claim 1 , further comprising:

a transfer control electrode between the first electrode and the third electrode.

6. The imaging device according to claim 5 , wherein during a charge storage operation, a potential applied to the transfer control electrode is less than a potential applied to the third electrode.

7. The imaging device according to claim 5 , wherein the substrate includes a third photoelectric conversion unit, and wherein each of the second, first, and third photoelectric conversion units are coupled to separate signal lines.

8. The imaging device according to claim 1 , further comprising:

a charge ejection electrode separate and apart from the first electrode and the third electrode, wherein the photoelectric conversion layer contacts the charge ejection electrode.

9. The imaging device according to claim 8 , wherein the charge ejection electrode is disposed at the same layer as the first electrode and the third electrode, and wherein the charge ejection electrode surrounds the first electrode and the third electrode.

10. The imaging device according to claim 1 , further comprising:

a plurality of third electrode segments.

11. The imaging device according to claim 10 , wherein a potential of a third electrode segment located at a position closest to the first electrode is greater than a potential of a third electrode segment located at a position farthest from the first electrode.

12. The imaging device according to claim 1 , wherein the first layer of the stacked layer structure includes indium.

13. The imaging device according to claim 1 , wherein during a charge storage period, a potential applied to the third electrode is greater than a potential applied to the first electrode.

14. The imaging device according to claim 1 , wherein at least a part of the insulating material is disposed above the first electrode.

15. The imaging device according to claim 14 , wherein a thickness of the insulating material between an upper surface of the first electrode and the stacked layer structure increases at a third electrode side of the first electrode as a distance between the first electrode and the third electrode decreases.

16. The imaging device according to claim 1 , wherein a thickness of the third electrode is substantially the same as a thickness of the first electrode.

17. An electronic apparatus comprising:

an imaging device including a plurality of pixels, each pixel of the plurality of pixels including:

a first photoelectric conversion unit disposed in a substrate, and

a second photoelectric conversion unit disposed above and at a light-incident side of the substrate, the second photoelectric conversion unit including:

a first electrode,

a stacked layer structure including a plurality of layers above the first electrode, wherein a first layer of the stacked layer structure is an oxide semiconductor layer, and wherein a second layer of the stacked layer structure is a photoelectric conversion layer,

a second electrode above the stacked layer structure,

a third electrode disposed at a same layer as the first electrode, and

an insulating material between the third electrode and the stacked layer structure, wherein a portion of the insulating material is between the first electrode and the third electrode; and

a lens configured to direct light onto a surface of the imaging device; and

 circuitry configured to control output signals from the imaging device.

18. A method of driving an imaging device, the method comprising:

applying a first potential to a charge storage electrode during a charging period;

applying a second potential to a first electrode during the charging period, wherein the first potential is greater than the second potential;

applying a third potential to the charge storage electrode during a charge transfer period; and

applying a fourth potential to the first electrode during the charge transfer period, wherein the fourth potential is greater than the third potential, and

wherein,

the imaging device includes a plurality of pixels, each pixel of the plurality of pixels including:

a first photoelectric conversion unit disposed in a substrate; and

a second photoelectric conversion unit disposed above and at a light-incident side of the substrate, the second photoelectric conversion unit including:

the first electrode,

a stacked layer structure including a plurality of layers above the first electrode, wherein a first layer of the stacked layer structure is an oxide semiconductor layer, and wherein a second layer of the stacked layer structure is a photoelectric conversion layer,

a second electrode above stacked layer structure,

the charge storage electrode disposed at a same layer as the first electrode, and

an insulating material between the charge storage electrode and the stacked layer structure, wherein a portion of the insulating material is between the first electrode and the charge storage electrode.

19. The imaging device according to claim 1 , wherein the second layer of the stacked layer structure is disposed between the first layer of the stacked layer structure and the second electrode.