Backside stealth dicing through tape followed by front side laser ablation dicing process
A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.
1. A method of forming a plurality of semiconductor devices comprising:
applying a tape material to a bottom surface of a semiconductor device, the back side of the semiconductor device comprising a silicon layer and a front side of the semiconductor device comprising a circuitry layer;
lasing with an infrared laser the silicon layer of the semiconductor device through the tape material;
lasing with a second laser the circuitry layer on the front side of the semiconductor device;
expanding the tape material, wherein a plurality of semiconductor devices are formed from the semiconductor device;
wherein lasing with the second laser the circuitry layer forms a groove in the circuitry layer; and
wherein the circuitry layer has a thickness and the groove in the circuitry layer does not penetrate the entire thickness of the circuitry layer.
2. The method of claim 1 , wherein the infrared laser is irradiated in a first pattern through the tape material to the silicon layer of the semiconductor device.
3. The method of claim 2 , wherein the second laser is irradiated in the first pattern to the circuitry layer on the top side of the semiconductor device.
4. The method of claim 1 , wherein lasing with the second laser comprises irradiated with an ultraviolet laser.
5. The method of claim 1 , wherein the silicon layer has a first thickness and the circuitry layer has a second thickness, the first thickness being greater than the second thickness.
6. The method of claim 1 , wherein the first thickness is approximately 22 microns and wherein the second thickness is approximately 6 microns.
7. The method of claim 1 , wherein the first thickness is less than nine times larger than the second thickness.